CY8C4125PVA-482 Datasheet CY8C4124PVA-442Z, CY8C4125PVS-482Z, CY8C4125PVA-482Z | P13-P15

Automotive PSoC

4: PSoC 4100

Family Datasheet

Document Number: 001-93576 Rev. *E Page 13 of 36

Sleep Mode, V

= 1.7 V to 5.5 V

SID25 I

DD20

C wakeup, WDT,

and Comparators on. 6 MHz.

–1.3 1.8mAV

= 1.71 V to 5.5 V

SID25A I

DD20A

C wakeup, WDT,

and Comparators on. 12 MHz.

–1.7 2.2mAV

= 1.71 V to 5.5 V

Deep Sleep Mode, V

= 1.8 V to 3.6 V (Regulator on)

SID31 I

DD26

C wakeup and WDT on. – 1.3 – µA T = 25 °C

SID32 I

DD27

C wakeup and WDT on. – – 45 µA T = 85 °C

Deep Sleep Mode, V

= 3.6 V to 5.5 V

SID34 I

DD29

C wakeup and WDT on – 1.5 15 µA Typ. at 25 °C

Max at 85 °C

Deep Sleep Mode, V

= 1.71 V to 1.89 V (Regulator bypassed)

SID37 I

DD32

C wakeup and WDT on. – 1.7 – µA T = 25 °C

SID38 I

DD33

C wakeup and WDT on – – 60 µA T = 85 °C

Deep Sleep Mode, +105 °C

SID33Q I

DD28Q

C wakeup and WDT on. Regulator Off. – – 135 µA V

= 1.71 V to 1.89 V

SID34Q I

DD29Q

C wakeup and WDT on. – – 180 µA V

= 1.8 V to 3.6 V

SID35Q I

DD30Q

C wakeup and WDT on. – – 140 µA V

= 3.6 V to 5.5 V

Hibernate Mode, V

= 1.8 V to 3.6 V (Regulator on)

SID40 I

DD35

GPIO & Reset active – 150 – nA T = 25 °C

SID41 I

DD36

GPIO & Reset active – – 1000 nA T = 85 °C

Hibernate Mode, V

= 3.6 V to 5.5 V

SID43 I

DD38

GPIO & Reset active – 150 – nA T = 25 °C

Hibernate Mode, V

= 1.71 V to 1.89 V (Regulator bypassed)

SID46 I

DD41

GPIO & Reset active – 150 – nA T = 25 °C

SID47 I

DD42

GPIO & Reset active – – 1000 nA T = 85 °C

Hibernate Mode, +105 °C

SID42Q I

DD37Q

Regulator Off – – 19.4 µA V

= 1.71 V to 1.89 V

SID43Q I

DD38Q

–– 17µAV

= 1.8 V to 3.6 V

SID44Q I

DD39Q

–– 16µAV

= 3.6 V to 5.5 V

Stop Mode

SID304 I

DD43A

Stop Mode current; V

= 3.3 V – 20 80 nA Typ at 25 °C.

Max at 85 °C

Stop Mode current; V

= 5.5 V – 20 750 nA Typ at 25 °C

Max at 85 °C

Stop Mode, +105 °C

SID304Q I

DD43AQ

Stop Mode current; V

= 3.6 V – – 5645 nA

XRES current

SID307 I

DD_XR

Supply current while XRES asserted – 2 5 mA

Table 3. DC Specifications (continued)

Spec ID# Parameter Description Min Typ Max Units Details/Conditions

Automotive PSoC

4: PSoC 4100

Family Datasheet

Document Number: 001-93576 Rev. *E Page 14 of 36

GPIO

Table 4. GPIO DC Specifications

Spec ID# Parameter Description Min Typ Max Units

Details/

Conditions

SID57 V

[2]

Input voltage high threshold 0.7 ×

DDD

– – V CMOS Input

SID58 V

Input voltage low threshold – – 0.3 ×

DDD

V CMOS Input

SID241 V

[2]

LVTTL input, V

DDD

< 2.7 V 0.7×

DDD

–– V

SID242 V

LVTTL input, V

DDD

< 2.7 V – – 0.3 ×

DDD

SID243 V

[2]

LVTTL input, V

DDD

 2.7 V 2.0 – – V

SID244 V

LVTTL input, V

DDD

 2.7 V – – 0.8 V

SID59 V

Output voltage high level V

DDD

–0.6

–– VI

= 4 mA at 3 V

DDD

SID60 V

Output voltage high level V

DDD

–0.5

–– VI

= 1 mA at

1.8 V V

DDD

SID61 V

Output voltage low level – – 0.6 V I

= 4 mA at

1.8 V V

DDD

SID62 V

Output voltage low level – – 0.6 V I

= 8mA at 3V

DDD

SID62A V

Output voltage low level – – 0.4 V I

= 3mA at 3V

DDD

SID63 R

PULLUP

Pull-up resistor 3.5 5.6 8.5 kΩ

SID64 R

PULLDOWN

Pull-down resistor 3.5 5.6 8.5 kΩ

SID65 I

Input leakage current (absolute value) – – 2 nA 25 °C, V

DDD

3.0 V

SID65A I

IL_CTBM

Input leakage current (absolute value) for

CTBM pins

––4nA

SID66 C

Input capacitance – – 7 pF

SID67 V

HYSTTL

Input hysteresis LVTTL 25 40 – mV V

DDD

 2.7 V.

Guaranteed by

characterization

SID68 V

HYSCMOS

Input hysteresis CMOS 0.05 ×

DDD

– – mV Guaranteed by

characterization

SID69 I

DIODE

Current through protection diode to

/Vss

––100

µA Guaranteed by

characterization

SID69A I

TOT_GPIO

Maximum total source or sink chip current – – 200 mA Guaranteed by

characterization

Note

2. V

must not exceed V

DDD

+ 0.2 V.

Automotive PSoC

4: PSoC 4100

Family Datasheet

Document Number: 001-93576 Rev. *E Page 15 of 36

XRES

Table 5. GPIO AC Specifications (Guaranteed by Characterization)

Spec ID# Parameter Description Min Typ Max Units

Details/

Conditions

SID70 T

RISEF

Rise time in fast strong mode 2 – 12 ns 3.3-V V

DDD

Cload = 25 pF

SID71 T

FALLF

Fall time in fast strong mode 2 – 12 ns 3.3-V V

DDD

Cload = 25 pF

SID72 T

RISES

Rise time in slow strong mode 10 – 60 3.3-V V

DDD

Cload = 25 pF

SID73 T

FALLS

Fall time in slow strong mode 10 – 60 3.3-V V

DDD

Cload = 25 pF

SID74 F

GPIOUT1

GPIO Fout;3.3 V  V

DDD

5.5 V. Fast

strong mode.

– – 24 MHz 90/10%, 25-pF

load, 60/40 duty

cycle

SID75 F

GPIOUT2

GPIO Fout;1.7 VV

DDD

3.3 V. Fast

strong mode.

– – 16.7 MHz 90/10%, 25-pF

load, 60/40 duty

cycle

SID76 F

GPIOUT3

GPIO Fout;3.3 V V

DDD

5.5 V. Slow

strong mode.

– – 7 MHz 90/10%, 25-pF

load, 60/40 duty

cycle

SID245 F

GPIOUT4

GPIO Fout;1.7 V V

DDD

3.3 V. Slow

strong mode.

– – 3.5 MHz 90/10%, 25-pF

load, 60/40 duty

cycle

SID246 F

GPIOIN

GPIO input operating frequency;

1.71 V

V

DDD

5.5 V

– – 24 MHz 90/10% V

Table 6. XRES DC Specifications

Spec ID# Parameter Description Min Typ Max Units

Details/

Conditions

SID77 V

Input voltage high threshold 0.7 ×

DDD

– – V CMOS Input

SID78 V

Input voltage low threshold – – 0.3 ×

DDD

V CMOS Input

SID79 R

PULLUP

Pull-up resistor 3.5 5.6 8.5 kΩ

SID80 C

Input capacitance – 3 – pF

SID81 V

HYSXRES

Input voltage hysteresis – 100 – mV Guaranteed by

characterization

SID82 I

DIODE

Current through protection diode to

DDD

– – 100 µA Guaranteed by

characterization

Table 7. XRES AC Specifications

Spec ID# Parameter Description Min Typ Max Units

Details/

Conditions

SID83 T

RESETWIDTH

Reset pulse width 1 – – µs Guaranteed by

characterization

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21 P22-P24 P25-P27 P28-P30 P31-P33 P34-P36

CY8C4125PVA-482

Mfr. #:

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Manufacturer:

Cypress Semiconductor

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CY8C4125PVA-482

CY8C4125PVA-482

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