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FM22L16-55-TG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
FM22L16
4-Mbit (256K × 16) F-RAM Memory
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 001-86188 Rev. *E Revised January 27, 2016
4-Mbit (256K × 16) F-RAM Memory
Features
■ 4-Mbit ferroelectric random access memory (F-RAM) logically
organized as 256K × 16
❐ Configurable as 512K × 8 using UB and LB
❐ High-endurance 100 trillion (10
14
) read/writes
❐ 151-year data retention (see the Data Retention and
Endurance table)
❐ NoDelay™ writes
❐ Page mode operation to 25-ns cycle time
❐ Advanced high-reliability ferroelectric process
■ SRAM compatible
❐ Industry-standard 256K × 16 SRAM pinout
❐ 55-ns access time, 110-ns cycle time
■ Advanced features
❐ Software-programmable block write-protect
■ Superior to battery-backed SRAM modules
❐ No battery concerns
❐ Monolithic reliability
❐ True surface mount solution, no rework steps
❐ Superior for moisture, shock, and vibration
■ Low power consumption
❐ Active current 8 mA (typ)
❐ Standby current 90 A (typ)
❐ Sleep mode current 5 A (max)
■ Low-voltage operation: V
DD
= 2.7 V to 3.6 V
■ Industrial temperature: –40 C to +85 C
■ 44-pin thin small outline package (TSOP) Type II
■ Restriction of hazardous substances (RoHS) compliant
Functional Description
The FM22L16 is a 256K × 16 nonvolatile memory that reads and
writes similar to a standard SRAM. A ferroelectric random
access memory or F-RAM is nonvolatile, which means that data
is retained after power is removed. It provides data retention for
over 151 years while eliminating the reliability concerns,
functional disadvantages, and system design complexities of
battery-backed SRAM (BBSRAM). Fast write timing and high
write endurance make the F-RAM superior to other types of
memory.
The FM22L16 operation is similar to that of other RAM devices
and therefore, it can be used as a drop-in replacement for a
standard SRAM in a system. Read and write cycles may be
triggered by CE
or simply by changing the address. The F-RAM
memory is nonvolatile due to its unique ferroelectric memory
process. These features make the FM22L16 ideal for nonvolatile
memory applications requiring frequent or rapid writes.
The FM22L16 includes a low voltage monitor that blocks access
to the memory array when V
DD
drops below V
DD
min. The
memory is protected against an inadvertent access and data
corruption under this condition. The device also features
software-controlled write protection. The memory array is
divided into 8 uniform blocks, each of which can be individually
write protected.
The device is available in a 400-mil, 44-pin TSOP-II surface
mount package. Device specifications are guaranteed over the
industrial temperature range –40 °C to +85 °C.
For a complete list of related documentation, click here.
Logic Block Diagram
Address Latch & Write Protect
CE
Control
Logic
WE
Block & Row Decoder
A
I/O Latch & Bus Driver
OE
DQ
32 K x 16 block 32 K x 16 block
32 K x 16 block 32 K x 16 block
32 K x 16 block 32 K x 16 block
32 K x 16 block 32 K x 16 block
. . .
Column Decoder
. . .
UB, LB
ZZ
17-2
A
1-0
15-0
A
17-0
FM22L16
Document Number: 001-86188 Rev. *E Page 2 of 22
Contents
Pinout ................................................................................3
Pin Definitions ..................................................................3
Device Operation ..............................................................4
Memory Operation ....................................................... 4
Read Operation ........................................................... 4
Write Operation ...........................................................4
Page Mode Operation ................................................. 4
Pre-charge Operation .................................................. 4
Sleep Mode .................................................................4
Software Write Protect ................................................ 5
Software Write-Protect Timing .................................... 7
SRAM Drop-In Replacement ....................................... 8
Maximum Ratings .............................................................9
Operating Range ...............................................................9
DC Electrical Characteristics ..........................................9
Data Retention and Endurance .....................................10
Capacitance ....................................................................10
Thermal Resistance ........................................................10
AC Test Conditions ........................................................10
AC Switching Characteristics .......................................11
SRAM Read Cycle .................................................... 11
SRAM Write Cycle ..................................................... 12
Power Cycle and Sleep Mode Timing ...........................16
Functional Truth Table ...................................................17
Byte Select Truth Table ..................................................17
Ordering Information ......................................................18
Ordering Code Definitions ......................................... 18
Package Diagram ............................................................19
Acronyms ........................................................................20
Document Conventions .................................................20
Units of Measure ....................................................... 20
Document History Page .................................................21
Sales, Solutions, and Legal Information ......................22
Worldwide Sales and Design Support ....................... 22
Products .................................................................... 22
PSoC® Solutions ...................................................... 22
Cypress Developer Community ................................. 22
Technical Support ..................................................... 22
FM22L16
Document Number: 001-86188 Rev. *E Page 3 of 22
Pinout
Figure 1. 44-pin TSOP II pinout
Pin Definitions
Pin Name I/O Type Description
A
17
–A
0
Input Address inputs: The 18 address lines select one of 262,144 words in the F-RAM array. The lowest two
address lines A
1
–A
0
may be used for page mode read and write operations.
DQ
15
–DQ
0
Input/Output Data I/O Lines: 16-bit bidirectional data bus for accessing the F-RAM array.
WE
Input Write Enable: A write cycle begins when WE is asserted. The rising edge causes the FM22L16 to write
the data on the DQ bus to the F-RAM array. The falling edge of WE
latches a new column address for
page mode write cycles.
CE
Input Chip Enable: The device is selected and a new memory access begins on the falling edge of CE. The
entire address is latched internally at this point. Subsequent changes to the A
1
–A
0
address inputs allow
page mode operation.
OE
Input Output Enable: When OE is LOW, the FM22L16 drives the data bus when the valid read data is
available. Deasserting OE
HIGH tristates the DQ pins.
UB
Input Upper Byte Select: Enables DQ
15
–DQ
8
pins during reads and writes. These pins are HI-Z if UB is HIGH.
If the user does not perform byte writes and the device is not configured as a 512K × 8, the UB
and LB
pins may be tied to ground.
LB
Input Lower Byte Select: Enables DQ
7
–DQ
0
pins during reads and writes. These pins are HI-Z if LB is HIGH.
If the user does not perform byte writes and the device is not configured as a 512K × 8, the UB
and LB
pins may be tied to ground.
ZZ
Input Sleep: When ZZ is LOW, the device enters a low-power sleep mode for the lowest supply current
condition. ZZ
must be HIGH for a normal read/write operation. If unused, tie ZZ pin to V
DD
.
V
SS
Ground Ground for the device. Must be connected to the ground of the system.
V
DD
Power supply Power supply input to the device.
NC No connect No connect. This pin is not connected to the die.
V
SS
DQ
6
DQ
5
DQ
4
V
DD
A
9
DQ
3
A
10
DQ
2
DQ
1
DQ
0
LB
A
13
CE
A
3
A
2
A
1
A
0
A
17
A
16
A
15
A
14
A
11
A
8
UB
OE
A
7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
44-pin TSOP II
Top View
(not to scale)
WE
DQ
7
A
4
V
SS
V
DD
DQ
15
DQ
14
DQ
13
DQ
12
DQ
11
DQ
10
DQ
9
DQ
8
(
×
16)
ZZ
A
6
A
5
A
12
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FM22L16-55-TG

Mfr. #:
Buy FM22L16-55-TG
Manufacturer:
Cypress Semiconductor
Description:
F-RAM 4M (256Kx16) 55ns F-RAM
Lifecycle:
New from this manufacturer.
Delivery:
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