High Power, 44 W Peak, Silicon SPDT,
Reflective Switch, 0.7 GHz to 3.5 GHz
Data Sheet
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FEATURES
Reflective, 50 Ω design
Low insertion loss: 0.6 dB typical to 2.0 GHz
High isolation: 50 dB typical to 2.0 GHz
High power handling
RF input power, continuous wave (CW) at T
CASE
= 85°C
43 dBm maximum operating
46.5 dBm absolute maximum rating
High linearity
0.1 dB compression (P0.1dB): 46 dBm typical
Input third-order intercept (IP3): 68 dBm typical to 2 GHz
ESD ratings
Human body model (HBM): 2 kV, Class 2
Charged device model (CDM): 1.25 kV
Single positive supply: V
DD
= 5 V
Positive control, TTL-compatible: V
CTL
= 0 V or V
DD
24-lead, 4 mm × 4 mm LFCSP package (16 mm
2
)
APPLICATIONS
Cellular/4G infrastructure
Wireless infrastructure
Military and high reliability applications
Test equipment
Pin diode replacement
FUNCTIONAL BLOCK DIAGRAM
RF1 RF2
RFC
V
CTL
14081-001
ADRF5130
Figure 1.
GENERAL DESCRIPTION
The ADRF5130 is a high power, reflective, 0.7 GHz to 3.5 GHz,
silicon, single-pole, double-throw (SPDT) switch in a leadless,
surface-mount package. The switch is ideal for high power and
cellular infrastructure applications, like long-term evolution (LTE)
base stations. The ADRF5130 has high power handling of 43 dBm
(maximum), a low insertion loss of 0.6 dB, input third-order
intercept of 68 dBm (typical), and 0.1 dB compression (P0.1dB)
of 46 dBm. On-chip circuitry operates at a single, positive
supply voltage of 5 V and typical supply current of 1.06 mA,
making the ADRF5130 an ideal alternative to pin diode-based
switches.
The device comes in a RoHS compliant, compact, 24-lead, 4 mm ×
4 mm LFCSP package.
