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MUN5137DW1T1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 5
1 Publication Order Number:
MUN5111DW1T1/D
MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5111DW1T1 series,
two BRT devices are housed in the SOT−363 package which is ideal
for low−power surface mount applications where board space is at a
premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol Value Unit
Collector-Base Voltage V
CBO
−50 Vdc
Collector-Emitter Voltage V
CEO
−50 Vdc
Collector Current I
C
−100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
mW/°C
Thermal Resistance −
Junction-to-Ambient
R
θ
JA
670 (Note 1.)
490 (Note 2.)
°C/W
Characteristic
(Both Junctions Heated)
Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/°C
Thermal Resistance −
Junction-to-Ambient
R
θ
JA
493 (Note 1.)
325 (Note 2.)
°C/W
Thermal Resistance −
Junction-to-Lead
R
θ
JL
188 (Note 1.)
208 (Note 2.)
°C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
Preferred devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q
1
R
1
R
2
R
2
R
1
Q
2
(1)(2)(3)
(4) (5) (6)
http://onsemi.com
SOT−363
CASE 419B
STYLE 1
MARKING DIAGRAM
1
6
XX
d
XX= Specific Device Code
d
= Date Code
= (See Page 2)
1
6
MUN5111DW1T1 Series
http://onsemi.com
2
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MUN5111DW1T1 SOT−363 0A 10 10 3000/Tape & Reel
MUN5112DW1T1 SOT−363 0B 22 22 3000/Tape & Reel
MUN5113DW1T1 SOT−363 0C 47 47 3000/Tape & Reel
MUN5114DW1T1 SOT−363 0D 10 47 3000/Tape & Reel
MUN5115DW1T1 SOT−363 0E 10 ∞ 3000/Tape & Reel
MUN5116DW1T1 SOT−363 0F 4.7 ∞ 3000/Tape & Reel
MUN5130DW1T1 SOT−363 0G 1.0 1.0 3000/Tape & Reel
MUN5131DW1T1 SOT−363 0H 2.2 2.2 3000/Tape & Reel
MUN5132DW1T1 SOT−363 0J 4.7 4.7 3000/Tape & Reel
MUN5133DW1T1 SOT−363 0K 4.7 47 3000/Tape & Reel
MUN5134DW1T1 SOT−363 0L 22 47 3000/Tape & Reel
MUN5135DW1T1 SOT−363 0M 2.2 47 3000/Tape & Reel
MUN5136DW1T1 SOT−363 0N 100 100 3000/Tape & Reel
MUN5137DW1T1 SOT−363 0P 47 22 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= −50 V, I
E
= 0) I
CBO
− − −100 nAdc
Collector-Emitter Cutoff Current (V
CE
= −50 V, I
B
= 0) I
CEO
− − −500 nAdc
Emitter-Base Cutoff Current MUN5111DW1T1
(V
EB
= −6.0 V, I
C
= 0) MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
mAdc
Collector-Base Breakdown Voltage (I
C
= −10 µA, I
E
= 0) V
(BR)CBO
−50 − − Vdc
Collector-Emitter Breakdown Voltage (Note 3.) (I
C
= −2.0 mA, I
B
= 0) V
(BR)CEO
−50 − − Vdc
ON CHARACTERISTICS (Note 3.)
Collector-Emitter Saturation Voltage (I
C
= −10 mA, I
E
= −0.3 mA)
(I
C
= −10 mA, I
B
= −5 mA) MUN5130DW1T1/MUN5131DW1T1
(I
C
= −10 mA, I
B
= −1 mA) MUN5115DW1T1/MUN5116DW1T1
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
V
CE(sat)
− − −0.25 Vdc
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
MUN5111DW1T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 4.) (Continued)
DC Current Gain MUN5111DW1T1
(V
CE
= −10 V, I
C
= −5.0 mA) MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Output Voltage (on)
(V
CC
= −5.0 V, V
B
= −2.5 V, R
L
= 1.0 kΩ) MUN5111DW1T1
MUN5112DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
(V
CC
= −5.0 V, V
B
= −3.5 V, R
L
= 1.0 kΩ) MUN5113DW1T1
(V
CC
= −5.0 V, V
B
= −5.5 V, R
L
= 1.0 kΩ) MUN5136DW1T1
(V
CC
= −5.0 V, V
B
= −4.0 V, R
L
= 1.0 kΩ) MUN5137DW1T1
V
OL
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
Vdc
Output Voltage (off) (V
CC
= −5.0 V, V
B
= −0.5 V, R
L
= 1.0 kΩ)
(V
CC
= −5.0 V, V
B
= −0.05 V, R
L
= 1.0 kΩ) MUN5130DW1T1
(V
CC
= −5.0 V, V
B
= −0.25 V, R
L
= 1.0 kΩ) MUN5115DW1T1
MUN5116DW1T1
MUN5131DW1T1
MUN5133DW1T1
V
OH
−4.9 − − Vdc
Input Resistor MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k Ω
Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/
MUN5113DW1T1/MUN5136DW1T1
MUN5114DW1T1
MUN5115DW1T1/MUN5116DW1T1
MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5137DW1T1
R
1
/R
2
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MUN5137DW1T1

Mfr. #:
Buy MUN5137DW1T1
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual
Lifecycle:
New from this manufacturer.
Delivery:
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