Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
MUN5137DW1T1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P20
MUN51
1
1DW1T1
Series
http://onsemi.com
16
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5135DW1T1
75
°
C
25
°
C
−25
°
C
Figure 57. V
CE(sat)
versus I
C
Figure 58. DC Current Gain
Figure 59. Output Capacitance
Figure 60. Output Current versus Input V
oltage
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
Figure 61. Input V
oltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECTOR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
6
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
2
4
8
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
°
C
25
°
C
T
A
= −25
°
C
75
°
C
25
°
C
T
A
= −25
°
C
75
°
C
25
°
C
T
A
= −25
°
C
0.01
35
25
15
5
0.01
0.1
30
10
12
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
=
5 V
V
O
=
0.2 V
MUN51
1
1DW1T1
Series
http://onsemi.com
17
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136DW1T1
75
°
C
25
°
C
−25
°
C
Figure 62. V
CE(sat)
versus I
C
Figure 63. DC Current Gain
Figure 64. Output Capacitance
Figure 65. Output Current versus Input V
oltage
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
Figure 66. Input V
oltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
7
6
5
4
3
2
1
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.01
1000
V
CE(sat)
, COLLECTOR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN (NORMALIZED)
1.2
0.6
60
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
0.2
0.4
0.8
1.0
100
6
5
4
3
2
1
0
0.1
1
10
I
C
, COLLECTOR CURRENT (mA)
10
9
8
7
100
12
10
8
6
4
2
0
1
10
18
16
14
20
V
in
, INPUT VOL
T
AGE (VOL
TS)
I
C
/I
B
= 10
75
°
C
25
°
C
T
A
= −25
°
C
V
CE
= 10 V
75
°
C
25
°
C
T
A
= −25
°
C
V
O
= 5 V
V
O
= 0.2 V
75
°
C
25
°
C
T
A
= −25
°
C
f = 1 MHz
I
E
= 0 V
T
A
= 25
°
C
V
O
=
5 V
MUN51
1
1DW1T1
Series
http://onsemi.com
18
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137DW1T1
Figure 67. V
CE(sat)
versus I
C
Figure 68. DC Current Gain
Figure 69. Output Capacitance
Figure 70. Output Current versus Input V
oltage
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
Figure 71. Input V
oltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
35
30
25
20
15
10
5
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
0.01
1000
h
FE
, DC CURRENT GAIN (NORMALIZED)
1.4
0.6
60
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
0.2
0.4
0.8
1.0
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
11
9
8
7
100
15
10
5
0
1
10
20
25
V
in
, INPUT VOL
T
AGE (VOL
TS)
50
45
40
0.1
0.01
10
1.2
f = 1 MHz
I
E
= 0 V
T
A
= 25
°
C
75
°
C
25
°
C
T
A
= −25
°
C
V
O
= 5 V
75
°
C
25
°
C
T
A
= −25
°
C
V
O
= 0.2 V
75
°
C
25
°
C
T
A
= −25
°
C
I
C
/I
B
= 10
V
CE
= 10 V
75
°
C
25
°
C
T
A
= −25
°
C
V
CE(sat)
, COLLECTOR VOL
T
AGE (VOL
TS)
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P20
MUN5137DW1T1
Mfr. #:
Buy MUN5137DW1T1
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
MUN5116DW1T1
MUN5137DW1T1
MUN5135DW1T1
MUN5114DW1T1
MUN5136DW1T1