MUN5137DW1T1

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P20

MUN5111DW1T1 Series

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4

Figure 1. Derating Curve − ALL DEVICES

300

200

150

100

50

0

−50 0 50 100 150

T

A

, AMBIENT TEMPERATURE (°C)

R

θ

JA

= 490°C/W

250

P

D

, POWER DISSIPATION (mW)

ALL MUN5111DW1T1 SERIES DEVICES

MUN5111DW1T1 Series

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5

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1

V

in

, INPUT VOLTAGE (VOLTS)

I

C

, COLLECTOR CURRENT (mA)

h

FE

, DC CURRENT GAIN (NORMALIZED)

Figure 2. V

CE(sat)

versus I

C

100

10

1

0.1

0.01

0.001

0

V

in

, INPUT VOLTAGE (VOLTS)

T

A

=−25°C

25°C

1 2 3 4 5

6 7 8 9 10

Figure 3. DC Current Gain

Figure 4. Output Capacitance

Figure 5. Output Current versus Input Voltage

Figure 6. Input Voltage versus Output Current

0.01

20

I

C

, COLLECTOR CURRENT (mA)

V

CE(sat)

, COLLECTOR VOLTAGE (VOLTS)

0.1

1

0 40

50

1000

1 10 100

I

C

, COLLECTOR CURRENT (mA)

T

A

=75°C

−25°C

100

10

0

I

C

, COLLECTOR CURRENT (mA)

0.1

1

10

100

10 20 30 40 50

T

A

=−25°C

25°C

75°C

75°C

I

C

/I

B

= 10

50

010203040

4

3

1

2

V

R

, REVERSE BIAS VOLTAGE (VOLTS)

C

ob

, CAPACITANCE (pF)

0

T

A

=−25°C

25°C

75°C

25°C

V

CE

= 10 V

f = 1 MHz

l

E

= 0 V

T

A

= 25°C

V

O

= 5 V

V

O

= 0.2 V

MUN5111DW1T1 Series

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6

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1

V

in

, INPUT VOLTAGE (VOLTS)

I

C

, COLLECTOR CURRENT (mA) h

FE

, DC CURRENT GAIN (NORMALIZED)

Figure 7. V

CE(sat)

versus I

C

Figure 8. DC Current Gain

1000

10

I

C

, COLLECTOR CURRENT (mA)

100

10

1

100

Figure 9. Output Capacitance

I

C

, COLLECTOR CURRENT (mA)

0 10 20 30

V

O

= 0.2 V

T

A

=−25°C

75°C

100

10

1

0.1

40 50

Figure 10. Output Current versus Input Voltage

100

10

1

0.1

0.01

0.001

0 1 2 3 4

V

in

, INPUT VOLTAGE (VOLTS)

5 6 7 8 9 10

Figure 11. Input Voltage versus Output Current

0.01

0.1

1

10

40

I

C

, COLLECTOR CURRENT (mA)

0 20 50

75°C

25°C

T

A

=−25°C

50

010 203040

4

3

2

1

0

V

R

, REVERSE BIAS VOLTAGE (VOLTS)

C

ob

, CAPACITANCE (pF)

25°C

I

C

/I

B

= 10

25°C

−25°C

V

CE

= 10 V

T

A

=75°C

f = 1 MHz

l

E

= 0 V

T

A

= 25°C

75°C

25°C

T

A

=−25°C

V

O

= 5 V

V

CE(sat)

, COLLECTOR VOLTAGE (VOLTS)

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P20

MUN5137DW1T1

Mfr. #:

Buy MUN5137DW1T1

Manufacturer:

ON Semiconductor

Description:

Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual

Lifecycle:

New from this manufacturer.

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