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MUN5137DW1T1
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P20
MUN51
1
1DW1T1
Series
http://onsemi.com
13
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132DW1T1
75
°
C
25
°
C
−25
°
C
Figure 42. V
CE(sat)
versus I
C
Figure 43. DC Current Gain
Figure 44. Output Capacitance
Figure 45. Output Current versus Input V
oltage
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
Figure 46. Input V
oltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECTOR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
6
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
2
4
8
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
°
C
25
°
C
T
A
= −25
°
C
75
°
C
25
°
C
T
A
= −25
°
C
75
°
C
25
°
C
T
A
= −25
°
C
0.01
35
25
15
5
0.01
0.1
30
10
12
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
=
5 V
V
O
=
0.2 V
MUN51
1
1DW1T1
Series
http://onsemi.com
14
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133DW1T1
75
°
C
25
°
C
−25
°
C
Figure 47. V
CE(sat)
versus I
C
Figure 48. DC Current Gain
Figure 49. Output Capacitance
Figure 50. Output Current versus Input V
oltage
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
Figure 51. Input V
oltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECTOR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
6
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
2
4
8
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
°
C
25
°
C
T
A
= −25
°
C
75
°
C
25
°
C
T
A
= −25
°
C
75
°
C
25
°
C
T
A
= −25
°
C
0.01
35
25
15
5
0.01
0.1
30
5
1
3
7
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
=
5 V
V
O
=
0.2 V
MUN51
1
1DW1T1
Series
http://onsemi.com
15
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5134DW1T1
75
°
C
25
°
C
−25
°
C
Figure 52. V
CE(sat)
versus I
C
Figure 53. DC Current Gain
Figure 54. Output Capacitance
Figure 55. Output Current versus Input V
oltage
V
in
, INPUT VOL
T
AGE (VOL
TS)
V
R
, REVERSE BIAS VOL
T
AGE (VOL
TS)
Figure 56. Input V
oltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECTOR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
3
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
1
2
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
9
8
7
100
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
°
C
25
°
C
T
A
= −25
°
C
75
°
C
25
°
C
T
A
= −25
°
C
75
°
C
25
°
C
T
A
= −25
°
C
0.01
35
25
15
5
0.01
0.1
30
2.5
0.5
1.5
3.5
10
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
=
5 V
V
O
=
0.2 V
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
P19-P20
MUN5137DW1T1
Mfr. #:
Buy MUN5137DW1T1
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual
Lifecycle:
New from this manufacturer.
Delivery:
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