CM35MXA-24S Datasheet CM35MXA-24S | P1-P3

Publication Date : August 2013

1

< IGBT MODULES >

CM35MXA-24S

HIGH POWER SWITCHING USE

I

NSULATED TYPE

Collector current I

C

.............….......................… 35A

Collector-emitter voltage V

CES

......................… 1200V

Maximum junction temperature T

jmax

.............. 175°C

●Flat base Type

●Copper base plate

●Tin plating pin terminals

●RoHS Directive compliant

CIB (Converter+Inverter+Chopper Brake)

●Recognized under UL1557, File E323585

APPLICATION

AC Motor Control, Motion/Servo Control, Power supply, etc.

OUTLINE DRAWING & INTERNAL CONNECTION

Dimension in mm

TERMINAL

t=0.8

SECTION A

INTERNAL CONNECTION

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2

over 3 to 6 ±0.3

over 6 to 30 ±0.5

over 30 to 120 ±0.8

over 120 to 400 ±1.2

GW P (2 3)

W(24~25)

NTC

TH1(28)

TH2(29) GW N( 3 1)

GV P( 18 )

V(19~20)

GVP(33)

GUP(13)

U(14~15)

GUN(4 0)

P

1(48~49

)

N1(44~4

5

)

B(52~53)

GB(41)

Es(32)

Es1(39)

P(54~56

)

N(59~61

R(1~2)

)

S(5~6

)

T(9~10

)

Caution: Each (two or three) pin terminal of P/N/P1/N1/U/V/W/B/R/S/T is connected in the module,

but should use all each three pins for the external wiring.

The tolerance of size between

terminals is assumed to be ±0.4.

< IGBT MODULES >

CM35MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013

2

ABSOLUTE MAXIMUM RATINGS (T

j

=25 °C, unless otherwise specified)

INVERTER PART IGBT/DIODE

Symbol Item Conditions Rating Unit

V

CES

Collector-emitter voltage G-E short-circuited 1200 V

V

GES

Gate-emitter voltage C-E short-circuited ± 20 V

I

C

DC, T

C

=125 °C

(Note2, 4)

35

I

CRM

Collector current

Pulse, Repetitive

(Note3)

70

A

P

tot

Total power dissipation T

C

=25 °C

(Note2, 4)

355 W

I

E

(Note1)

(Note2)

35

I

ERM

(Note1)

Emitter current

Pulse, Repetitive

(Note3)

70

A

T

jmax

Maximum junction temperature Instantaneous event (overload) 175 °C

BRAKE PART IGBT/DIODE

Symbol Item Conditions Rating Unit

V

CES

Collector-emitter voltage G-E short-circuited 1200 V

V

GES

Gate-emitter voltage C-E short-circuited ± 20 V

I

C

DC, T

C

=125 °C

(Note2, 4)

35

I

CRM

Collector current

Pulse, Repetitive

(Note3)

70

A

P

tot

Total power dissipation T

C

=25 °C

(Note2, 4)

355 W

V

RRM

Repetitive peak reverse voltage G-E short-circuited 1200 V

I

F

(Note2)

35

I

FRM

Forward current

Pulse, Repetitive

(Note3)

70

A

T

jmax

Maximum junction temperature Instantaneous event (overload) 175 °C

CONVERTER PART DIODE

Symbol Item Conditions Rating Unit

V

RRM

Repetitive peak reverse voltage - 1600 V

E

a

Recommended AC input voltage RMS 440 V

I

O

DC output current 3-phase full wave rectifying, T

C

=125 °C

(Note4)

35 A

The sine half wave 1 cycle peak value,

I

FSM

Surge forward current

f=60 Hz, non-repetitive

350 A

I

2

t Current square time Value for one cycle of surge current 510 A

2

s

T

jmax

Maximum junction temperature Instantaneous event (overload) 150 °C

MODULE

Symbol Item Conditions Rating Unit

V

isol

Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V

T

Cmax

Maximum case temperature

(Note4)

125 °C

T

jop

Operating junction temperature Continuous operation (under switching) -40 ~ +150

T

stg

Storage temperature - -40 ~ +125

°C

MECHANICAL CHARACTERISTICS

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

M

s

Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m

Terminal to terminal 6.47 - -

d

s

Creepage distance

Terminal to base plate 14.27 - -

mm

Terminal to terminal 6.47 - -

d

a

Clearance

Terminal to base plate 12.33 - -

mm

m mass - - 300 - g

e

c

Flatness of base plate On the centerline X, Y

(Note5)

±0 - +100 μm

< IGBT MODULES >

CM35MXA-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : August 2013

3

ELECTRICAL CHARACTERISTICS (T

j

=25 °C, unless otherwise specified)

INVERTER PART IGBT/DIODE

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

I

CES

Collector-emitter cut-off current V

CE

=V

CES

, G-E short-circuited - - 1.0 mA

I

GES

Gate-emitter leakage current V

GE

=V

GES

, C-E short-circuited - - 0.5 μA

V

GE(th)

Gate-emitter threshold voltage I

C

=3.5 mA, V

CE

=10 V 5.4 6.0 6.6 V

I

C

=35 A

(Note6)

, T

j

=25 °C - 1.80 2.25

V

GE

=15 V, T

j

=125 °C - 2.00 -

(Terminal) T

j

=150 °C - 2.05 -

V

I

C

=35 A

(Note6)

, T

j

=25 °C - 1.70 2.15

V

GE

=15 V, T

j

=125 °C - 1.90 -

V

CEsat

Collector-emitter saturation voltage

(Chip) T

j

=150 °C - 1.95 -

V

C

ies

Input capacitance - - 3.5

C

oes

Output capacitance - - 0.7

C

res

Reverse transfer capacitance

V

CE

=10 V, G-E short-circuited

- - 0.06

nF

Q

G

Gate charge V

CC

=600 V, I

C

=35 A, V

GE

=15 V - 82 - nC

t

d(on)

Turn-on delay time - - 300

t

r

Rise time

V

CC

=600 V, I

C

=35 A, V

GE

=±15 V,

- - 200

t

d(off)

Turn-off delay time - - 600

t

f

Fall time

R

G

=18 Ω, Inductive load

- - 300

ns

I

E

=35 A

(Note6)

, T

j

=25 °C - 1.80 2.25

G-E short-circuited, T

j

=125 °C - 1.80 -

(Terminal) T

j

=150 °C - 1.80 -

V

I

E

=35 A

(Note6)

, T

j

=25 °C - 1.70 2.15

G-E short-circuited, T

j

=125 °C - 1.70 -

V

EC

(Note1)

Emitter-collector voltage

(Chip) T

j

=150 °C - 1.70 -

V

t

rr

(Note1)

Reverse recovery time V

CC

=600 V, I

E

=35 A, V

GE

=±15 V, - - 300 ns

Q

rr

(Note1)

Reverse recovery charge R

G

=18 Ω, Inductive load - 1.9 - μC

E

on

Turn-on switching energy per pulse V

CC

=600 V, I

C

=I

E

=35 A, - 4.2 -

E

off

Turn-off switching energy per pulse V

GE

=±15 V, R

G

=18 Ω, T

j

=150 °C, - 3.7 -

mJ

E

rr

(Note1)

Reverse recovery energy per pulse Inductive load - 3.5 - mJ

Main terminals-chip, per switch,

R

CC'+EE'

Internal lead resistance

T

C

=25 °C

(Note4)

- - 5.7 mΩ

r

g

Internal gate resistance Per switch - 0 - Ω

BRAKE PART IGBT/DIODE

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

I

CES

Collector-emitter cut-off current V

CE

=V

CES

, G-E short-circuited - - 1.0 mA

I

GES

Gate-emitter leakage current V

GE

=V

GES

, C-E short-circuited - - 0.5 μA

V

GE(th)

Gate-emitter threshold voltage I

C

=3.5 mA, V

CE

=10 V 5.4 6.0 6.6 V

I

C

=35 A

(Note6)

, T

j

=25 °C - 1.80 2.25

V

GE

=15 V, T

j

=125 °C - 2.00 -

(Terminal) T

j

=150 °C - 2.05 -

V

I

C

=35 A

(Note6)

, T

j

=25 °C - 1.70 2.15

V

GE

=15 V, T

j

=125 °C - 1.90 -

V

CEsat

Collector-emitter saturation voltage

(Chip) T

j

=150 °C - 1.95 -

V

C

ies

Input capacitance - - 3.5

C

oes

Output capacitance - - 0.7

C

res

Reverse transfer capacitance

V

CE

=10 V, G-E short-circuited

- - 0.06

nF

Q

G

Gate charge V

CC

=600 V, I

C

=35 A, V

GE

=15 V - 82 - nC

CM35MXA-24S

CM35MXA-24S

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