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CM35MXA-24S

P1-P3P4-P6P7-P9P10-P12P13-P14
< IGBT MODULES >
CM35MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : August 2013
7
TEST CIRCUIT
V
GE
=15V
V
Shor
t
-
circuited
48~49
14~15
44~45
I
C
13
40
32
V
GE
=15V
V
Short-
circuited
48~49
19~20
44~45
I
C18
33
32
V
GE
=15V
V
Short-
circuited
48~49
24~25
44~45
I
C
23
31
32
V
Shor
t
-
circuited
48~49
52~53
44~45
I
E
41
32
VGE=15V
V
Short-
circuited
P1
U
N1
I
C
GUP
GUN
Es
VGE=15V
V
Short-
circuited
P1
V
N1
I
C
GVP
GVN
Es
VGE=15V
V
Short-
circuited
P1
W
N1
I
C
GWP
GWN
Es
V
GE
=15V
V
P1
B
N1
I
CGB
Es
G-E
short-circuited
GVP-V, GVN-Es,
GWP-W, GWN-Es,
GB-Es
G-E
short-circuited
GUP-U, GUN-Es,
GWP-W, GWN-Es,
GB-Es
G-E
short-circuited
GUP-U, GUN-Es,
GVP-V, GVN-Es,
GB-Es
G-E
short-circuited
GUP-U, GUN-Es,
GVP-V, GVN-Es,
GWP-W, GWN-Es
UP / UN IGBT
VP / VN IGBT
WP / WN IGBT
Brake IGBT / DIODE
V
CEsat
/ BRAKE DIODE V
F
test circuit
V
Shor
t
-
circuited
48~49
14~15
44~45
I
E
13
40
32
Shor
t
-
circuited
V
Short-
circuited
48~49
19~20
44~45
I
E
18
33
32
Short-
circuited
V
Short-
circuited
48~49
24~25
44~45
I
E
23
31
32
Short-
circuited
V
54~56
1~2
59~61
I
F
V
Short-
circuited
P1
U
N1
I
E
GUP
GUN
Es
Short-
circuited
V
Short-
circuited
P1
V
N1
I
E
GVP
GVN
Es
Short-
circuited
V
Short-
circuited
P1
W
N1
I
E
GWP
GWN
Es
Short-
circuited
V
P
R
N
IF
G-E
short-circuited
GVP-V, GVN-Es,
GWP-W, GWN-Es,
GB-Es
G-E
short-circuited
GUP-U, GUN-Es,
GWP-W, GWN-Es,
GB-Es
G-E
short-circuited
GUP-U, GUN-Es,
GVP-V, GVN-Es,
GB-Es
UP / UN DIODE
VP / VN DIODE
WP / WN DIODE
CONVERTER DIODE (ex. phase-R)
V
EC
/ CONVERTER DIODE V
F
test circuit
* In the above test circuit, should use all three main pin terminals (P1/N1/P/N/U/V/W) for connection with the terminals and the current source.
< IGBT MODULES >
CM35MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : August 2013
8
PERFORMANCE CURVES
INVERTER PART
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
T
j
=25 °C
(Chip)
V
GE
=15 V
(Chip)
COLLECTOR CURRENT I
C
(A)
0
10
20
30
40
50
60
70
0246810
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CEsat
(V)
0
0.5
1
1.5
2
2.5
3
3.5
0 1020304050607
13.5 V
V
GE
=20 V
12 V
15 V
T
j
=125 °C
T
j
=150 °C
11 V
0
COLLECTOR-EMITTER VOLTAGE V
CE
(V) COLLECTOR CURRENT I
C
(A)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHAR
ACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
T
j
=25 °C
(Chip)
G-E short-circuited
(Chip)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CEsat
(V)
0
2
4
6
8
10
6 8 10 12 14 16 18 20
EMITTER CURRENT I
E
(A)
1
10
100
00.511.522.5
T
j
=25 °C
10 V
9 V
I
C
=70 A
I
C
=14 A
I
C
=35 A
T
j
=150 °C
T
j
=125 °C
T
j
=25 °C
3
GATE-EMITTER VOLTAGE V
GE
(V) EMITTER-COLLECTOR VOLTAGE V
EC
(V)
< IGBT MODULES >
CM35MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : August 2013
9
PERFORMANCE CURVES
INVERTER PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, V
GE
=±15 V, R
G
=18 Ω, INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
V
CC
=600 V, V
GE
=±15 V, I
C
=35 A, INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
SWITCHING TIME (ns)
1
10
100
1000
1 10 100
SWITCHING TIME (ns)
10
100
1000
10 100 1 000
COLLECTOR CURRENT I
C
(A) EXTERNAL GATE RESISTANCE R
G
(Ω)
t
d(off)
t
f
t
d(off)
t
f
t
d(on)
t
d(on)
t
r
t
r
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, V
GE
=±15 V, R
G
=18 Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
V
CC
=600 V, V
GE
=±15 V, I
C
=35 A,
INDUCTIVE LOAD, PER PULSE
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
SWITCHING ENERGY (mJ)
0.1
1
10
100
1 10 100
0.01
0.1
1
10
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
10
100
10 100 1000
COLLECTOR CURRENT I
C
(A)
EMITTER CURRENT I
E
(A)
EXTERNAL GATE RESISTANCE R
G
(Ω)
E
rr
E
on
E
off
E
off
E
on
E
rr
P1-P3P4-P6P7-P9P10-P12P13-P14

CM35MXA-24S

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Buy CM35MXA-24S
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Description:
IGBT MODULE CIB 35A 1200V
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New from this manufacturer.
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