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CM35MXA-24S

P1-P3P4-P6P7-P9P10-P12P13-P14
< IGBT MODULES >
CM35MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : August 2013
4
ELECTRICAL CHARACTERISTICS (cont.; T
j
=25 °C, unless otherwise specified)
BRAKE PART IGBT/DIODE
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
t
d(on)
Turn-on delay time - - 300
t
r
Rise time
V
CC
=600 V, I
C
=35 A, V
GE
=±15 V,
- - 200
t
d(off)
Turn-off delay time - - 600
t
f
Fall time
R
G
=18 Ω, Inductive load
- - 300
ns
I
RRM
Reverse current V
R
=V
RRM
, G-E short-circuited - - 1.0 mA
I
F
=35 A
(Note6)
, T
j
=25 °C - 1.80 2.25
G-E short-circuited, T
j
=125 °C - 1.80 -
(Terminal) T
j
=150 °C - 1.80 -
V
I
F
=35 A
(Note6)
, T
j
=25 °C - 1.70 2.15
G-E short-circuited, T
j
=125 °C - 1.70 -
V
F
Forward voltage
(Chip) T
j
=150 °C - 1.70 -
V
t
rr
Reverse recovery time V
CC
=600 V, I
F
=35 A, V
GE
=±15 V, - - 300 ns
Q
rr
Reverse recovery charge R
G
=18 Ω, Inductive load - 1.9 - μC
E
on
Turn-on switching energy per pulse V
CC
=600 V, I
C
=I
F
=35 A, - 4.2 -
E
off
Turn-off switching energy per pulse V
GE
=±15 V, R
G
=18 Ω, T
j
=150 °C, - 3.7 -
mJ
E
rr
Reverse recovery energy per pulse Inductive load - 3.5 - mJ
r
g
Internal gate resistance - - 0 - Ω
CONVERTER PART DIODE
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
I
RRM
Reverse current V
R
=V
RRM
, T
j
=150 °C - - 4.0 mA
V
F
(Terminal)
Forward voltage I
F
=35 A
(Note6)
- 1.2 1.6 V
NTC THERMISTOR PART
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
R
25
Zero-power resistance T
C
=25 °C
(Note4)
4.85 5.00 5.15 kΩ
∆R/R Deviation of resistance R
100
=493 Ω, T
C
=100 °C
(Note4)
-7.3 - +7.8 %
B
(25/50)
B-constant Approximate by equation
(Note7)
- 3375 - K
P
25
Power dissipation T
C
=25 °C
(Note4)
- - 10 mW
THERMAL RESISTANCE CHARACTERISTICS
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
R
th(j-c)Q
Junction to case, per Inverter IGBT - - 0.42
R
th(j-c)D
Junction to case, per Inverter DIODE - - 0.69
K/W
R
th(j-c)Q
Junction to case, per Brake IGBT - - 0.42
R
th(j-c)D
Junction to case, per Brake DIODE - - 0.69
K/W
R
th(j-c)D
Thermal resistance
(Note4)
Junction to case, per Converter DIODE - - 0.45 K/W
Case to heat sink, per 1 module,
R
th(c-s)
Contact thermal resistance
(Note4)
Thermal grease applied
(Note8)
- 15 - K/kW
< IGBT MODULES >
CM35MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : August 2013
5
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
j
) should not increase beyond T
jmax
rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed T
jmax
rating.
4. Case temperature (T
C
) and heat sink temperature (T
s
) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to the figure of chip location.
5. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Y
X
+:Convex
-:Concave
+:Convex
-:Concave
mounting side
mounting side
mounting side
6. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Refer to the figure of test circuit.
7.
)
TT
/()
R
R
ln(B
)/(
502550
25
5025
11
,
R
25
: resistance at absolute temperature T
25
[K]; T
25
=25 [°C]+273.15=298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
=50 [°C]+273.15=323.15 [K]
8. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
"φ2.6×10 or φ2.6×12 self tapping screw"
The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.
RECOMMENDED OPERATING CONDITIONS
Limits
Symbol Item Conditions
Min. Typ. Max.
Unit
V
CC
(DC) Supply voltage Applied across P-N/P1-N1 terminals - 600 850 V
V
GEon
Gate (-emitter drive) voltage
Applied across GB-Es/
G*P-*/G*N-Es(*=U, V, W) terminals
13.5 15.0 16.5 V
Inverter IGBT 18 - 180
R
G
External gate resistance Per switch
Brake IGBT 18 - 180
Ω
< IGBT MODULES >
CM35MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : August 2013
6
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: DIODE (*=U/V/W), DiBr: BRAKE DIODE, CR*P/CR*N: CONVERTER DIODE (*=R/S/T), Th: NTC thermistor
TEST CIRCUIT AND WAVEFORMS
V
CC
R
G
-V
GE
+V
GE
-V
GE
+
vCE
vGE 0 V
i
E
i
C
P1
N1
*
G*P
G*N
Es
*: U, V, W
Load
～
t
t
f
t
r
t
d(on)
i
C
10%
90 %
90 %
v
GE
～
～
～
0 V
0 A
0
t
d(off)
t
I
rr
Q
rr
=0.5×I
rr
×t
rr
0.5×I
rr
t
t
rr
i
E
0 A
I
E
Switching characteristics test circuit and waveforms t
rr
, Q
rr
test waveform
0.1×I
CM
I
CM
V
CC
v
CE
i
C
t
0
t
i
0.1×V
CC
0.1×V
CC
V
CC
I
CM
v
CE
i
C
t0
0.02×I
CM
t
i
I
EM
v
EC
i
E
t0 V
t
i
t
V
CC
0 A
IGBT Turn-on switching energy IGBT Turn-off switching energy DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
P1-P3P4-P6P7-P9P10-P12P13-P14

CM35MXA-24S

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IGBT MODULE CIB 35A 1200V
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