< IGBT MODULES >
CM35MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : August 2013
10
PERFORMANCE CURVES
INVERTER PART
CAPACITANCE CHARACTERISTICS
(TYPICAL)
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T
j
=25 °C
V
CC
=600 V, V
GE
=±15 V, R
G
=18 , INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
CAPACITANCE (nF)
0.01
0.1
1
10
0.1 1 10 100
t
rr
(ns), I
rr
(A)
10
100
1000
1 10 100
COLLECTOR-EMITTER VOLTAGE V
CE
(V) EMITTER CURRENT I
E
(A)
C
ies
t
rr
C
oes
I
rr
C
res
GATE CHARGE CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
V
CC
=600 V, I
C
=35 A, T
j
=25 °C
Single pulse, T
C
=25 °C
R
th(j-c)Q
=0.42 K/W, R
th(j-c)D
=0.69 K/W
GATE-EMITTER VOLTAGE V
GE
(V)
0
5
10
15
20
0 50 100 150
NORMALIZED TRANSIENT THERMAL RESISTANCE
Z
th(j-c)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
GATE CHARGE Q
G
(nC) TIME (S)
< IGBT MODULES >
CM35MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : August 2013
11
PERFORMANCE CURVES
BRAKE PART
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
V
GE
=15 V
(Chip)
G-E short-circuited
(Chip)
COLLECTOR-EMITTER
SATURATION VOLTAGE V
CEsat
(V)
0
0.5
1
1.5
2
2.5
3
3.5
0 10203040506070
FORWARD VOLTAGE V
F
(V)
1
10
100
00.511.522.5
T
j
=125 °C
T
j
=125 °C
T
j
=150 °C
T
j
=150 °C
T
j
=25 °C
T
j
=25 °C
3
COLLECTOR CURRENT I
C
(A) FORWARD CURRENT I
F
(A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, V
GE
=±15 V, R
G
=18 , INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
V
CC
=600 V, I
C
=35 A, V
GE
=±15 V, INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
SWITCHING TIME (ns)
1
10
100
1000
1 10 100
SWITCHING TIME (ns)
10
100
1000
10 100 1000
COLLECTOR CURRENT I
C
(A) EXTERNAL GATE RESISTANCE R
G
()
t
f
t
d(off)
t
d(off)
t
f
t
d(on)
t
d(on)
t
r
t
r
< IGBT MODULES >
CM35MXA-24S
HIGH POWER SWITCHING USE
INSULATED TYPE
Publication Date : August 2013
12
PERFORMANCE CURVES
BRAKE PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, V
GE
=±15 V, R
G
=18 ,
INDUCTIVE LOAD, PER PULSE
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
V
CC
=600 V, I
C
/I
F
=35 A, V
GE
=±15 V,
INDUCTIVE LOAD, PER PULSE
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
SWITCHING ENERGY (mJ)
0.1
1
10
100
1 10 100
0.01
0.1
1
10
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
1
10
100
10 100 1000
COLLECTOR CURRENT I
C
(A)
FORWARD CURRENT I
F
(A)
EXTERNAL GATE RESISTANCE R
G
()
E
rr
E
on
E
off
E
off
E
on
E
rr
CLAMP DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
V
CC
=600 V, V
GE
=±15 V, R
G
=18 , INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
Single pulse, T
C
=25 °C
R
th(j-c)Q
=0.42 K/W, R
th(j-c)D
=0.69 K/W
t
rr
(ns), I
rr
(A)
10
100
1000
1 10 100
NORMALIZED TRANSIENT THERMAL RESISTANCE
Z
th(j-c)
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
FORWARD CURRENT I
F
(A) TIME (S)
t
rr
I
rr

CM35MXA-24S

Mfr. #:
Manufacturer:
Description:
IGBT MODULE CIB 35A 1200V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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