PDF: 09005aef80f09084/Source: 09005aef80f09068 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
16 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
Serial Presence-Detect
Notes: 1. To avoid spurious start and stop conditions, a minimum delay is placed between SCL = 1 and
the falling or rising edge of SDA.
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
t
WRC) is the time from a valid stop condition of a write
sequence to the end of the EEPROM internal erase/program cycle. During the WRITE cycle,
the EEPROM bus interface circuit is disabled, SDA remains HIGH due to pull-up resistor, and
the EEPROM does not respond to its slave address.
Table 13: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units
Supply voltage
V
DDSPD 1.7 3.6 V
Input high voltage: Logic 1; All inputs
V
IH VDDSPD × 0.7 VDDSPD + 0.5 V
Input low voltage: Logic 0; All inputs
V
IL –0.6 VDDSPD × 0.3 V
Output low voltage: I
OUT = 3mA
V
OL –0.4V
Input leakage current: V
IN = GND to VDD
ILI 0.10 3 µA
Output leakage current: V
OUT = GND to VDD
ILO 0.05 3 µA
Standby current:
I
SB 1.6 4 µA
Power supply current, READ: SCL clock frequency = 100 KHz
I
CC
R
0.4 1 mA
Power supply current, WRITE: SCL clock frequency = 100 KHz
I
CC
W
23mA
Table 14: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to VSS; VDDSPD = +1.7V to +3.6V
Parameter/Condition Symbol Min Max Units Notes
SCL LOW to SDA data-out valid
t
AA 0.2 0.9 µs 1
Time the bus must be free before a new transition can start
t
BUF 1.3 µs
Data-out hold time
t
DH 200 ns
SDA and SCL fall time
t
F–300ns2
Data-in hold time
t
HD:DAT 0 µs
Start condition hold time
t
HD:STA 0.6 µs
Clock HIGH period
t
HIGH 0.6 µs
Noise suppression time constant at SCL, SDA inputs
t
I–50ns
Clock LOW period
t
LOW 1.3 µs
SDA and SCL rise time
t
R–0.3µs2
SCL clock frequency
f
SCL 400 KHz
Data-in setup time
t
SU:DAT 100 ns
Start condition setup time
t
SU:STA 0.6 µs 3
Stop condition setup time
t
SU:STO 0.6 µs
WRITE cycle time
t
WRC 10 ms 4
PDF: 09005aef80f09084/Source: 09005aef80f09068 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
17 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
Serial Presence-Detect
Table 15: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 19
Byte Description Entry (Version)
MT16HTF6464A MT16HTF12864A MT16HTF25664A
0
Number of SPD bytes used by Micron
128808080
1
Total number of bytes in SPD device
256080808
2
Fundamental memory type
DDR2 SDRAM080808
3
Number of row addresses on assembly
13, 14 0D 0E 0E
4
Number of column addresses on
assembly
10 0A 0A 0A
5
DIMM height and module ranks
1.18in, dual rank 61 61 61
6
Module data width
64 40 40 40
7
Reserved
0 000000
8
Module voltage interface levels
SSTL 1.8V 05 05 05
9
DDR2 cycle time,
t
CK (CL = MAX value,
see byte 18)
-80E
-667
-53E
-40E
30
3D
50
25
30
3D
50
25
30
3D
50
10
DDR2 access from clock,
t
AC (CL = MAX
value, see byte 18)
-80E
-667
-53E
-40E
45
50
60
40
45
50
60
40
45
50
60
11
Module configuration type
00 00 00
12
Refresh rate/type
7.81µs/self 82 82 82
13
DDR2 SDRAM device width (primary
device)
8 080808
14
Error-checking DDR2 data width
N/A000000
15
Reserved
1 clock000000
16
Burst lengths supported
4, 80C0C0C
17
Number of banks on DDR2 device
4 or 8040408
18
CAS latencies supported
-80E (6, 5, 4)
-667 (5, 4, 3)
-53E/-40E (4, 3)
38
18
30
38
18
30
38
18
19
Module thickness
01 01 01
20
DDR2 DIMM type
Unbuffered 02 02 02
21
DDR2 module attributes
00 00 00
22
DDR2 device attributes: weak driver
(01) or 50Ω ODT (03)
-80E/-667
-53E/-40E
03
01
03
01
03
01
23
DDR2 cycle time,
t
CK, MAX CL - 1
-80E/-667
-53E
-40E
3D
50
50
3D
50
50
3D
50
50
24
SDRAM access from CK,
t
AC,
MAX CL - 1
-80E
-667
-53E
-40E
45
50
60
40
45
50
60
40
45
50
60
25
SDRAM cycle time,
t
CK, MAX CL - 2
-80E
-667
-53E/-40E(N/A)
50
00
00
50
00
00
50
00
26
SDRAM access from CK,
t
AC,
MAX CL - 2
-80E
-667
-53E/-40E(N/A)
45
00
00
45
00
00
45
00
27
MIN row precharge time,
t
RP
-80E
-667/-53E/-40E
3C
32
3C
32
3C
PDF: 09005aef80f09084/Source: 09005aef80f09068 Micron Technology, Inc., reserves the right to change products or specifications without notice.
HTF16C64_128_256x64AG.fm - Rev. D 5/06 EN
18 ©2003 Micron Technology, Inc. All rights reserved.
512MB, 1GB, 2GB: (x64, DR) 240-Pin DDR2 SDRAM UDIMM
Serial Presence-Detect
28
MIN row active to row active,
t
RRD
1E 1E 1E
29
MIN RAS#-to-CAS# delay,
t
RCD
-80E
-667/-53E/-40E
3C
32
3C
32
3C
30
MIN RAS# pulse width,
t
RAS
-80E/-667/-53E
-40E
2D
28
2D
28
2D
28
31
Module rank density
256MB, 512MB, 1GB
40 80 01
32
Address and command setup time,
t
IS
b
-80E
-667
-53E
-40E
20
25
35
17
20
25
35
17
20
25
35
33
Address and command hold time,
t
IH
b
-80E
-667
-53E
-40E
27
37
47
25
27
37
47
25
27
37
47
34
Data/data mask input setup time,
t
DS
b
-80E
-667/-53E
-40E
10
15
05
10
15
05
10
15
35
Data/data mask input hold time,
t
DH
b
-80E
-667
-53E
-40E
17
22
27
12
17
22
27
12
17
22
27
36
Write recovery time,
t
WR
3C 3C 3C
37
WRITE-to-READ command delay,
t
WTR
-80E/-667/-53E
-40E
1E
28
1E
28
1E
28
38
READ-to-PRECHARGE command delay,
t
RTP
1E 1E 1E
39
Mem analysis probe
00 00 00
40
Extension for bytes 41 and 42
-80E
-667/-53E/-40E
00
30
00
36
06
41
MIN active auto refresh time,
t
RC
-80E
-667/-53E
-40E
3C
37
39
3C
37
39
3C
37
42
MIN AUTO REFRESH-to-ACTIVE/
AUTO REFRESH command period,
t
RFC
69 69 7F
43
DDR2 device MAX cycle time,
t
CKMAX
80 80 80
44
DDR2 device MAX DQS-DQ skew time,
t
DQSQ
-80E
-667
-53E
-40E
18
1E
23
14
18
1E
23
14
18
1E
23
45
DDR2 device MAX read data hold skew
factor,
t
QHS
-80E
-667
-53E
-40E
22
28
2D
1E
22
28
2D
1E
22
28
2D
46
PLL relock time
00 00 00
47–61
Optional features, not supported
00 00 00
62
SPD revision
Release 1.2 12 12 12
63
Checksum for bytes 0–62
-80E
-667
-53E
-40E
ED
98
FF
90
4C
F7
5E
31
ED
98
FF
Table 15: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; table notes located on page 19
Byte Description Entry (Version)
MT16HTF6464A MT16HTF12864A MT16HTF25664A

MT16HTF25664AY-667EA3

Mfr. #:
Manufacturer:
Micron
Description:
MODULE DDR2 SDRAM 2GB 240UDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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