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ADRF5132BCPZN-R7

P1-P3P4-P6P7-P9P10-P12
High Power, 20 W Peak, Silicon SPDT,
Reflective Switch, 0.7 GHz to 5.0 GHz
Data Sheet
ADRF5132
Rev. A Document Feedback
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
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Tel: 781.329.4700 ©2017–2018 Analog Devices, Inc. All rights reserved.
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FEATURES
Reflective, 50 Ω design
Low insertion loss: 0.6 dB typical at 2.7 GHz
High power handling at T
CASE
= 105°C
Long-term (>10 years operation)
Peak power: 43 dBm
CW power: 38 dBm
LTE power average (8 dB PAR): 35 dBm
Single event (<10 sec operation)
LTE power average (8 dB PAR): 41 dBm
High linearity
P0.1dB: 42.5 dBm typical
IP3: 65 dBm typical at 2.0 GHz to 4.0 GHz
ESD ratings
HBM: 2 kV, Class 2
CDM: 1.25 kV
Single positive supply: 5 V
Positive control, CMOS/TTL compatible
16-lead, 3 mm × 3 mm LFCSP package
APPLICATIONS
Cellular/4G infrastructure
Wireless infrastructure
Military and high reliability applications
Test equipment
Pin diode replacement
FUNCTIONAL BLOCK DIAGRAM
16424-001
12
11
10
1
3
49
2
6
5
7
8
16
15
14
13
GND
RF1
NIC
GND
GND
GND
V
CTL
GND
V
DD
RF2
NIC
GND
GND
RFC
GND
GND
ADRF5132
Figure 1.
GENERAL DESCRIPTION
The ADRF5132 is a high power, reflective, 0.7 GHz to 5.0 GHz,
silicon, single-pole, double-throw (SPDT) reflective switch in a
leadless, surface-mount package. The switch is ideal for high
power and cellular infrastructure applications, like long-term
evolution (LTE) base stations. The ADRF5132 has high power
handling of 35 dBm LTE (average typical at 105°C), a low insertion
loss of 0.6 dB at 2.7 GHz, input third-order intercept of 65 dBm
(typical), and 0.1 dB compression (P0.1dB) of 42.5 dBm.
The on-chip circuitry operates at a single, positive supply
voltage of 5 V and a typical supply current of 1.1 mA typical,
making the ADRF5132 an ideal alternative to pin diode-based
switches.
The device is in a RoHS compliant, compact, 16-lead, 3 mm ×
3 mm LFCSP package.
ADRF5132 Data Sheet
Rev. A | Page 2 of 12
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications ....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description ......................................................................... 1
Revision History ............................................................................... 2
Specifications ..................................................................................... 3
Absolute Maximum Ratings ............................................................ 4
Thermal Resistance ...................................................................... 4
ESD Caution .................................................................................. 4
Pin Configuration and Function Descriptions ............................. 5
Interface Schematics .....................................................................5
Typical Performance Characteristics ..............................................6
Insertion Loss, Isolation, Return Loss, Third-Order Intercept,
and Power Compression ...............................................................6
Theory of Operation .........................................................................8
Applications Information .................................................................9
Evaluation Board ...........................................................................9
Application Circuit ..................................................................... 10
Outline Dimensions ....................................................................... 12
Ordering Guide .......................................................................... 12
REVISION HISTORY
4/2018—Rev. 0 to Rev. A
Changes to Figure 1 .......................................................................... 1
Changes to Figure 2 and Table 2 ..................................................... 5
Changes to Figure 17 ...................................................................... 11
12/2017—Revision 0: Initial Version
Data Sheet ADRF5132
Rev. A | Page 3 of 12
SPECIFICATIONS
V
DD
= 5 V, V
CTL
= 0 V or V
DD
, T
A
= 25°C, and 50 Ω system, unless otherwise noted.
Table 1.
Parameter Test Conditions/Comments Min Typ Max Unit
FREQUENCY RANGE 0.7 5.0 GHz
INSERTION LOSS 0.9 GHz 0.5 dB
2.7 GHz 0.6 dB
3.8 GHz
0.65
dB
5.0 GHz 0.9 dB
ISOLATION
RFC to RF1/RF2 (Worst Case) 0.7 GHz to 2.0 GHz 50 dB
2.0 GHz to 5.0 GHz 45 dB
RF1 to RF2 (Worst Case) 0.7 GHz to 2.0 GHz 50 dB
2.0 GHz to 5.0 GHz 35 dB
RETURN LOSS
RFC 0.7 GHz to 4.0 GHz 25 dB
4.0 GHz to 5.0 GHz 15 dB
RFC to RF1/RF2 0.7 GHz to 4.0 GHz 25 dB
4.0 GHz to 5.0 GHz 15 dB
SWITCHING SPEED
Rise and Fall Time (t
RISE
, t
FAL L
) 90% to 10% of radio frequency (RF) output 140 ns
On and Off Time (t
ON
, t
OFF
) 50% V
CTL
to 10% to 90% of RF output 550 ns
INPUT POWER
0.1 dB Compression (P0.1dB) 42.5 dB
INPUT THIRD-ORDER INTERCEPT (IP3) Two-tone input power = 30 dBm per tone at 10 MHz tone spacing
0.7 GHz to 2.0 GHz 68 dBm
2.0 GHz to 4.0 GHz
65
dBm
4.0 GHz to 5.0 GHz
62
dBm
RECOMMENDED OPERATING CONDITIONS 0.7 GHz to 4.0 GHz
Bias Voltage Range (V
DD
) 4.5 5.4 V
Control Voltage Range (V
CTL
) 0 V
DD
V
Maximum RF Input Power
T
CASE
= 105°C
1
Continuous wave (CW) 38 dBm
8 dB peak average ratio (PAR), long-term (>10 years operation),
average
35 dBm
8 dB PAR LTE, single event (<10 sec), average
41
dBm
T
CASE
= 85°C CW 40 dBm
8 dB PAR LTE, long-term (>10 years operation), average 35 dBm
8 dB PAR LTE, single event (<10 sec), average 41 dBm
T
CASE
= 25°C CW 43 dBm
8 dB PAR LTE, long-term (>10 years operation), average 35 dBm
8 dB PAR LTE, single event (<10 sec), average 41 dBm
Case Temperature Range (T
CASE
) −40 +105 °C
DIGITAL INPUT CONTROL VOLTAGE V
DD
= 4.5 V to 5.4 V, T
CASE
= −40°C to +105°C, at <1 µA typical
Low (V
IL
)
0
0.8
V
High (V
IH
) 1.3 5.0 V
SUPPLY CURRENT (I
DD
)
V
DD
= 5 V
1.1
mA
1
Peak power is 43 dBm, corresponding to PAR of 8 dB at LTE long-term.
P1-P3P4-P6P7-P9P10-P12

ADRF5132BCPZN-R7

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RF Switch ICs High Pwr ,20W Peak SPDT,ReflectiveSwich
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