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PCF2003DUS/DAAZ

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30
PCF2003 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 1 — 20 October 2015 16 of 30
NXP Semiconductors
PCF2003
32 kHz watch circuit with programmable adaptive motor pulse
9. Limiting values
[1] When writing to the OTP cells, the supply voltage (V
DD
) can be raised to a maximum of 12 V for a time period of 1 s.
[2] Connecting the battery with reversed polarity does not destroy the circuit, but in this condition a large current flows, which rapidly
discharges the battery.
[3] Pass level; Human Body Model (HBM), according to Ref. 6 “
JESD22-A114”.
[4] Pass level; Machine Model (MM), according to Ref. 7 “
JESD22-A115”.
[5] Pass level; latch-up testing according to Ref. 8 “
JESD78” at maximum ambient temperature (T
amb(max)
).
[6] According to the store and transport requirements (see Ref. 10 “
UM10569”) the devices have to be stored at a temperature of +8 C to
+45 C and a humidity of 25 % to 75 %.
Table 10. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DD
supply voltage V
SS
=0V
[1][2]
1.8 +7.0 V
V
I
input voltage on all supply pins 0.5 +7.5 V
t
sc
short circuit duration time output - indefinite s
T
amb
ambient temperature 10 +60 C
V
ESD
electrostatic discharge
voltage
HBM
[3]
- 2000 V
MM
[4]
- 200 V
I
lu
latch-up current
[5]
-100mA
T
stg
storage temperature
[6]
30 +100 C
PCF2003 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 1 — 20 October 2015 17 of 30
NXP Semiconductors
PCF2003
32 kHz watch circuit with programmable adaptive motor pulse
10. Characteristics
[1] P1 + ... + P4 + N1 + N2 (see Section 7.2).
[2] R
L
and C
L
are a load resistor and load capacitor, externally connected to pad RESET.
Table 11. Characteristics
V
DD
= 1.55 V; V
SS
=0V; f
osc
= 32.768 kHz; T
amb
=25
C; quartz crystal: R
S
=40k
, C
1
= 2 fF to 3 fF, C
L
= 8.2 pF; unless
otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Supply
V
DD
supply voltage normal operating mode;
T
amb
= 10 C to +60 C
1.1 1.55 3.60 V
V
DD
supply voltage variation V/t=1V/s--0.25V
I
DD
supply current between motor pulses - 90 120 nA
between motor pulses
at V
DD
=3.5V
- 120 180 nA
T
amb
= 10 C to +60 C - - 200 nA
stop mode;
pad RESET connected to
V
DD
- 100 135 nA
Motor output
V
sat
saturation voltage R
motor
=2k;
T
amb
= 10 C to +60 C
[1]
- 150 200 mV
Z
o(sc)
output impedance
(short circuit)
between motor pulses;
I
motor
<1mA
- 200 300
Oscillator
V
start
start voltage 1.1 - - V
g
m
transconductance V
i(osc)
50 mV (p-p) 5 10 - S
t
startup
start-up time - 0.3 0.9 s
f/f frequency stability V
DD
= 100 mV - 0.05 0.20 ppm
C
L(itg)
integrated load
capacitance
4.3 5.2 6.3 pF
R
par
parasitic resistance allowed resistance between
adjacent pads
20 - - M
Pad RESET
f
o
output frequency - 32 - Hz
V
O(dif)
differential output
voltage
R
L
=1M; C
L
=10pF
[2]
1.4 - - V
t
r
rise time R
L
=1M; C
L
=10pF
[2]
-1-s
t
f
fall time R
L
=1M; C
L
=10pF
[2]
-1-s
I
i(AV)
average input current pad RESET connected to
V
DD
or V
SS
-1020nA
PCF2003 All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet Rev. 1 — 20 October 2015 18 of 30
NXP Semiconductors
PCF2003
32 kHz watch circuit with programmable adaptive motor pulse
11. OTP programming characteristics
[1] Program each word once only.
Table 12. Specifications for OTP programming
See Figure 7, Figure 8 and Figure 12.
Symbol Parameter
[1]
Conditions Min Typ Max Unit
V
DD
supply voltage during programming procedure 1.5 - 3.0 V
V
P(prog)(start)
programming supply voltage (start) 6.6 - 6.8 V
V
P(prog)(stop)
programming supply voltage (stop) 6.2 - 6.4 V
V
P(mod)
supply voltage modulation for entering instructions, referred
to V
DD
320 350 380 mV
V
prestore
prestore voltage for prestore pulse 6.2 - 6.4 V
V
store
store voltage for writing to the OTP cells 9.9 10.0 10.1 V
I
store
store current for writing to the OTP cells - - 10 mA
t
p(start)
start pulse width 8 10 12 ms
t
p(stop)
pulse width of stop pulse 0.05 - 0.5 ms
t
mod
modulation pulse width 25 30 40 s
t
w(prestore)
prestore pulse width 0.05 - 0.5 ms
t
w(store)
store pulse width for writing to the OTP cells 95 100 110 ms
t
0
time 0 waiting time after start pulse 20 - 30 ms
t
1
time 1 pulse distance for incrementing
the state counter
0.6 0.7 0.8 ms
t
2
time 2 pulse distance for clocking the
data register with data = logic 0
1.6 1.7 1.8 ms
t
3
time 3 pulse distance for clocking the
data register with data = logic 1
2.6 2.7 2.8 ms
t
4
time 4 waiting time for writing to OTP
cells
0.1 0.2 0.3 ms
SR slew rate for modulation of the supply
voltage
0.5 - 5.0 V/s
R
mod
modulation resistance supply current modulation
read-out resistor
18 30 45 k
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PCF2003DUS/DAAZ

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NXP Semiconductors
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IC CLOCK 32KHZ 1CIR 8WLCSP
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