FDMS3660S Datasheet FDMS3660S, FDMS3660S-F121 | P1-P3

November, 2017 − Rev. 3

1 Publication Order Number:

FDMS3660S/D

FDMS3660S

PowerTrench

)

Power Stage

Asymmetric Dual N−Channel MOSFET

Description

This device includes two specialized N−Channel MOSFETs in a

dual PQFN package. The switch node has been internally connected to

enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFET (Q2) have

been designed to provide optimal power efficiency.

Features

Q1: N−Channel

• Max r

DS(on)

= 8 mW at V

GS

= 10 V, I

D

= 13 A

• Max r

DS(on)

= 11 mW at V

GS

= 4.5 V, I

D

= 11 A

Q2: N−Channel

• Max r

DS(on)

= 1.8 mW at V

GS

= 10 V, I

D

= 30 A

• Max r

DS(on)

= 2.2 mW at V

GS

= 4.5 V, I

D

= 27 A

• Low Inductance Packaging Shortens Rise/Fall Times, Resulting in

Lower Switching Losses

• MOSFET Integration Enables Optimum Layout for Lower Circuit

Inductance and Reduced Switch Node Ringing

• These Devices are Pb−Free and are RoHS Compliant

Applications

• Computing

• Communications

• General Purpose Point of Load

• Notebook VCORE

PQFN8

POWER 56

CASE 483AJ

www.onsemi.com

4

3

2

1

5

6

7

Q

8

1

Q

S2

G2

D1

G1

PHASE

2

See detailed ordering and shipping information on page 2 o

f

this data sheet.

ORDERING INFORMATION

G1

D1

G2

S2

D1

PHASE

(S1/D2)

Pin 1

FDMS3660S

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2

MAXIMUM RATINGS (T

A

= 25°C unless otherwise noted)

Symbol

Rating Q1 Q2 Unit

V

DS

Drain to Source Voltage 30 30 V

Bvdsst Bvdsst (Transient) < 100 ns 36 36 V

V

GS

Gate to Source Voltage (Note 3) ±20 ±12 V

I

D

Drain Current − Continuous (Package limited) (T

C

= 25°C) 30 60

A

Drain Current − Continuous (Silicon limited) (T

C

= 25°C) 60 145

Drain Current − Continuous (T

A

= 25°C) 13 (Note 6a) 30 (Note 6b)

Drain Current − Pulsed 40 120

E

AS

Single Pulse Avalanche Energy 33 (Note 4) 86 (Note 5) mJ

P

D

Power Dissipation for Single Operation (T

A

= 25°C) 2.2 (Note 6a) 2.5 (Note 6b)

W

Power Dissipation for Single Operation (T

A

= 25°C) 1 (Note 6c) 1 (Note 6d)

T

J

, T

STG

Operating and Storage Junction Temperature Range −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol Parameter Q1 Q2 Unit

R

q

JA

Thermal Resistance, Junction−to−Ambient 57 (Note 6a) 50 (Note 6b) °C/W

R

q

JA

Thermal Resistance, Junction−to−Ambient 125 (Note 6c) 120 (Note 6d) °C/W

R

q

JC

Thermal Resistance, Junction−to−Case 2.9 2.2 °C/W

PACKAGE MARKING AND ORDERING INFORMATION

Device Device Marking Package Reel Size Tape Width Quantity

FDMS3660S 22CF

07OD

Power 56 13″ 12 mm 3000 Units

Table 1. ELECTRICAL CHARACTERISTICS T

J

= 25°C unless otherwise noted

Symbol Parameter Test Conditions Type Min Typ Max Units

OFF CHARACTERISTICS

BV

DSS

Drain to Source Breakdown Voltage

I

D

= 250 mA, V

GS

= 0 V

I

D

= 1 mA, V

GS

= 0 V

Q1

Q2

30

V

DBV

DSS

/

DT

J

Breakdown Voltage Temperature

Coefficient

I

D

= 250 mA, referenced to 25°C

I

D

= 10 mA, referenced to 25°C

Q1

Q2

16

24

mV/°C

I

DSS

Zero Gate Voltage Drain Current V

DS

= 24 V, V

GS

= 0 V Q1

Q2

1

500

mA

I

GSS

Gate to Source Leakage Current V

GS

= 20 V, V

DS

= 0 V

V

GS

= 12 V, V

DS

= 0 V

Q1

Q2

100

nA

ON CHARACTERISTICS

V

GS(th)

Gate to Source Threshold Voltage

V

GS

= V

DS

, I

D

= 250 mA

V

GS

= V

DS

, I

D

= 1 mA

Q1

Q2

1.1

1.9

1.5

2.7

2.2

V

DV

GS(th)

/

DT

J

Gate to Source Threshold Voltage

Temperature Coefficient

I

D

= 250 mA, referenced to 25°C

I

D

= 10 mA, referenced to 25°C

Q1

Q2

−6

−3

mV/°C

r

DS(on)

Drain to Source On Resistance

V

GS

= 10 V, I

D

= 13 A

V

GS

= 4.5 V, I

D

= 11 A

V

GS

= 10 V, I

D

= 13 A, T

J

=125°C

Q1 4

6

5.7

8

11

8.7

mW

V

GS

= 10 V, I

D

= 30 A

V

GS

= 4.5 V, I

D

= 27 A

V

GS

= 10 V, I

D

= 30 A, T

J

= 125°C

Q2 1.3

1.5

1.86

1.8

2.2

2.6

FDMS3660S

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3

Table 1. ELECTRICAL CHARACTERISTICS T

J

= 25°C unless otherwise noted

Symbol UnitsMaxTypMinTypeTest ConditionsParameter

ON CHARACTERISTICS

g

FS

Forward Transconductance V

DS

= 5 V, I

D

= 13 A

V

DS

= 5 V, I

D

= 30 A

Q1

Q2

62

231

S

DYNAMIC CHARACTERISTICS

C

iss

Input Capacitance

Q1:

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHZ

Q2:

V

DS

= 15 V, V

GS

= 0 V, f = 1 MHZ

Q1

Q2

1325

4130

1765

5493

pF

C

oss

Output Capacitance Q1

Q2

466

915

620

1220

pF

C

rss

Reverse Transfer Capacitance Q1

Q2

46

124

70

185

pF

R

g

Gate Resistance Q1

Q2

0.2

0.6

0.8

2

3

W

SWITCHING CHARACTERISTICS

t

d(on)

Turn−On Delay Time

Q1:

V

DD

= 15 V, I

D

= 13 A, R

GEN

= 6 W

Q2:

V

DD

= 15 V, I

D

= 30 A, R

GEN

= 6 W

Q1

Q2

7.7

11

15

20

ns

t

r

Rise Time Q1

Q2

2.2

5

10

ns

t

d(off)

Turn−Off Delay Time Q1

Q2

19

40

34

64

ns

t

f

Fall Time Q1

Q2

1.8

3.9

10

ns

Q

g

Total Gate Charge V

GS

= 0 V to

10 V

Q1

V

DD

= 15 V, I

D

= 13 A

Q2

V

DD

= 15 V, I

D

= 30 A

Q1

Q2

21

62

29

87

nC

Q

g

Total Gate Charge V

GS

= 0 V to

4.5 V

Q1

Q2

9.5

29

13

41

nC

Q

gs

Gate to Source Gate Charge

Q1

V

DD

= 15 V, I

D

= 13 A

Q2

V

DD

= 15 V, I

D

= 30 A

Q1

Q2

3.9

9

nC

Q

gd

Gate to Drain “Miller” Charge Q1

Q2

2.6

7

nC

DRAIN−SOURCE DIODE CHARACTERISTICS

V

SD

Source to Drain Diode Forward Volt-

age

V

GS

= 0 V, I

S

= 13 A (Note 2)

V

GS

= 0 V, I

S

= 2 A (Note 2)

V

GS

= 0 V, I

S

= 30 A (Note 2)

V

GS

= 0 V, I

S

= 2 A (Note 2)

Q1

Q2

0.8

0.7

0.8

0.6

1.2

V

t

rr

Reverse Recovery Time

Q1

I

F

= 13 A, di/dt = 100 A/ms

Q2

I

F

= 30 A, di/dt = 300 A/ms

Q1

Q2

26

29

42

46

ns

Q

rr

Reverse Recovery Charge Q1

Q2

10

32

20

50

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. R

q

JA

is determined with the device mounted on a 1 in

2

pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR−4 material. R

q

JC

is guaranteed

by design while R

q

CA

is determined by the user’s board design.

2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.

3. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied with the negative Vgs

rating.

4. E

AS

of 33 mJ is based on starting T

J

= 25°C; N−ch: L = 1.9 mH, I

AS

= 6 A, V

DD

= 27 V, V

GS

= 10 V. 100% test at L= 0.1 mH, I

AS

= 16 A.

5. E

AS

of 86 mJ is based on starting T

J

= 25°C; N−ch: L = 0.6 mH, I

AS

= 17 A, V

DD

= 27 V, V

GS

= 10 V. 100% test at L= 0.1 mH, I

AS

= 31 A.

FDMS3660S

FDMS3660S

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