FDMS3660S
www.onsemi.com
8
TYPICAL CHARACTERISTICS (Q2 N−Channel) T
J
= 25°C unless otherwise noted
0.0 0.2 0.4 0.6 0.8 1.0
0
20
40
60
80
100
120
V
GS
=2.5V
V
GS
= 3 V
V
GS
= 10 V
V
GS
= 4.5 V
V
GS
= 3.5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 20406080100120
0
1
2
3
4
V
GS
= 3 V
V
GS
= 3.5 V
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 2.5 V
V
GS
= 4.5 V
V
GS
=
10 V
−75 −50 −25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
I
D
= 30 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON−RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
2
4
6
8
T
J
= 125
o
C
I
D
= 30 A
T
J
= 25
o
C
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON−RESISTANCE
(
mW
)
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
100
120
T
J
= 125
o
C
V
DS
= 5 V
PULSE DURATION = 80ms
DUTY CYCLE = 0.5% MAX
T
J
= −55
o
C
T
J
= 25
o
C
I
D
, DRAIN CURRENT (A)
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0
0.001
0.01
0.1
1
10
100
T
J
= −55
o
C
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 14. On Region Characteristics Figure 15. Normalized On−Resistance vs.
Drain Current and Gate Voltage
Figure 16. Normalized On−Resistance vs.
Junction Temperature
Figure 17. On−Resistance vs. Gate to Source
Voltage
Figure 18. Transfer Characteristics Figure 19. Source to Drain Diode Forward
Voltage vs. Source Current
