FDMS3660S
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11
TYPICAL CHARACTERISTICS (continued)
SyncFET Schottky Body Diode Characteristics
ON Semiconductor’s SyncFET process embeds a
Schottky diode in parallel with PowerTrench MOSFET.
This diode exhibits similar characteristics to a discrete
external Schottky diode in parallel with a MOSFET.
Figure 27 shows the reverses recovery characteristic of the
FDMS001N025DSD.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase the
power in the device.
Figure 27. FDMS3660S SyncFET Body Diode
Reverse Recovery Characteristic
Figure 28. SyncFET Body Diode Reverse Leakage
vs. Drain−Source Voltage
0 100 200 300 400
−5
0
5
10
15
20
25
30
35
didt = 300 A/ms
CURRENT (A)
TIME (ns)
0 5 10 15 20 25
10
−6
10
−5
10
−4
10
−3
10
−2
T
J
= 125
o
C
T
J
= 100
o
C
T
J
= 25
o
C
I
DSS
, REVERSE LEAKAGE CURRENT (A)
V
DS
, REVERSE VOLTAGE (V)
Application Information
Switch Node Ringing Suppression
ON Semiconductor’s Power Stage products incorporate a
proprietary design that minimizes the peak overshoot,
ringing voltage on the switch node (PHASE) without the
need of any external snubbing components in a buck
converter. As shown in the Figure 29, the Power Stage
solution rings significantly less than competitor solutions
under the same set of test conditions.
Figure 29. Power Stage Phase Node Rising Edge, High Side Turn On
Power Stage Device Competitors Solution
