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NCP81255MNTXG

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
NCP81255
www.onsemi.com
7
Table 3. ELECTRICAL CHARACTERISTICS
(Unless otherwise stated: −40°C<T
A
< 100°C; 4.75 V < VCC < 5.25 V; C
VCC
= 0.1 mF)
Parameter
Test Conditions Min Typ Max Unit
BIAS SUPPLY
VCC Quiescent Current
EN = High − 10 12 mA
EN = Low − 20 40
mA
PS3 − − 10 mA
PS4 − − 200
mA
VCC UVLO Threshold
VCC Rising − − 4.5 V
VCC Falling 4 − − V
VCC UVLO Hysteresis − 275 − mV
VIN UVLO Threshold
VIN Rising − − 4.25 V
VIN Falling 3 − − V
VIN UVLO Hysteresis − 680 − mV
ENABLE INPUT
Enable High Input Leakage Current
Enable = 0 −1.0 0 1.0
mA
Upper Threshold V
UPPER
0.8 − − V
Lower Threshold V
LOWER
− − 0.3 V
Enable Hysteresis − 300 − mV
Enable Delay Time Measure Time from Enable Transitioning
HI to VR_RDY High
− − 2.5 ms
DAC SLEW RATE
Soft Start Slew Rate − 1/2 SR Fast −
mv/ms
Slew Rate Slow − 1/2 SR Fast −
mv/ms
Slew Rate Fast − 30 −
mv/ms
OSCILLATOR
Switching Frequency Range
600 − 1,200 KHz
Switching Frequency Accuracy 600 KHz < F
SW
< 1.2 MHz −10 − 10 %
ADC
Voltage Range
0 − 2 V
Total Unadjusted Error (TUE) −1 − +1 %
Differential Non-Linearity (DNL) 8-Bit − − 1 LSB
Power Supply Sensitivity − ±1 − %
Conversion Time − 6 −
ms
Round Robin − 55 −
ms
VR_HOT#
Output Low Voltage
− − 0.3 V
Output Leakage Current High Impedance State −1.0 − 1.0
mA
TSENSE
Alert# Assert Threshold
− 491 − mV
Alert# De-Assert Threshold − 513 − mV
VRHOT Assert Threshold − 472 − mV
VRHOT Rising Threshold − 494 − mV
TSENSE Bias Current 116 120 124
mA
NCP81255
www.onsemi.com
8
Table 3. ELECTRICAL CHARACTERISTICS (continued)
(Unless otherwise stated: −40°C<T
A
< 100°C; 4.75 V < VCC < 5.25 V; C
VCC
= 0.1 mF)
Parameter UnitMaxTypMinTest Conditions
VR_RDY_OUTPUT
Output Low Saturation Voltage
I
VR_RDY
= 4 mA, − − 0.3 V
Rise Time
External Pull-Up of 1 kW to 3.3 V,
C
TOT
= 45 pF, DVo = 10% to 90%
− − 150 ns
Fall Time
External Pull-Up of 1 kW to 3.3 V,
C
TOT
= 45 pF, DVo = 90% to 10%
− − 150 ns
Output Voltage at Power-Up
VRRDY Pulled Up to 5 V via 2 kW
− − 1.2 V
Output Leakage Current When High VRRDY = 5.0 V −1.0 − 1.0
mA
VRRDY Delay (Falling) From OCP − 0 −
ms
VRRDY Delay (Falling) From OVP − 0.3 −
ms
DIFFERENTIAL VOLTAGE SENSE AMPLIFIER
Input Bias Current
−1 − 1
mA
VSP Input Voltage Range −0.3 − 3.0 V
VSN Input Voltage Range −0.3 − 0.3 V
gm VSP = 1.2 V 1.33 1.6 1.86 mS
Open loop Gain
Load = 1 nF in Series with 1 kW in Parallel
with 10 pF to Ground
70 73 − dB
Source Current Input Differential −200 mV − 280 −
mA
Sink Current Input Differential 200 mV − 280 −
mA
−3dB Bandwidth
Load = 1 nF in Series with 1 kW in Parallel
with 10 pF to Ground
− 15 − MHz
IOUT
Analog Gain Accuracy −3 − +3 %
gm 0.95 1.0 1.05 mS
IOUT Output Accuracy −140 − 140 nA
ADC Voltage Range 0 − 2.0 V
ADC Differential Nonlinearity (DNL) Highest 8-Bits − − 1 LSB
OUTPUT OVER VOLTAGE & UNDER VOLTAGE PROTECTION (OVP & UVP)
Over Voltage Threshold VSP−VSN−VID Setting 360 − 440 mV
Over Voltage Max Capability − 2 − V
Over Voltage Delay VSP Rising to PWMx Low − 400 − ns
Over Voltage VR_RDY Delay VSP Rising to VR_RDY Low − 400 − ns
Under Voltage Threshold VSP−VSN Falling 225 290 375 mV
Under-Voltage Hysteresis VSP−VSN Falling/Rising − 25 − mV
Under-Voltage Blanking Delay VSP−VSN Falling to VR_RDY Falling − 5 −
ms
DROOP
gm
0.95 1.0 1.05 mS
Offset Accuracy −1 − 1
mA
Common Mode Rejection CS1 Input Referred from 0.5 V to 1.2 V − 80 − dB
OVERCURRENT PROTECTION
ILIMIT Threshold 1.275 1.3 1.325 V
ILIMIT Delay − 500 − ns
ILIMIT Gain I
ILIMIT
/(CSP−CSN), CSP−CSN = 20 mV − 1.0 − mS
CSP-CSN ZCD COMPARATOR
Offset Accuracy −1.85 − 1.85 mV
NCP81255
www.onsemi.com
9
Table 3. ELECTRICAL CHARACTERISTICS (continued)
(Unless otherwise stated: −40°C<T
A
< 100°C; 4.75 V < VCC < 5.25 V; C
VCC
= 0.1 mF)
Parameter UnitMaxTypMinTest Conditions
SWN ZCD COMPARATOR
Offset Accuracy
−1.5 − 1.5 mV
HIGH-SIDE MOSFET
Drain-to-Source On Resistance V
GS
= 4.5 V, I
D
= 10 A, R
ON_H
− 8.0 −
mW
LOW-SIDE MOSFET
Drain-to-Source On Resistance
V
GS
= 4.5 V, I
D
= 10 A, R
ON_L
− 4.0 −
mW
HIGH-SIDE GATE DRIVE
Pull-High Drive On Resistance V
BST
– V
SW
= 5 V, R
DRV_HH
− 1.2 2.5
W
Pull-Low Drive On Resistance V
BST
– V
SW
= 5 V, R
DRV_HL
− 0.8 2.0
W
GH Propagation Delay Time From GL Falling to GH Rising, T
GH_d
15 23 30 ns
GH Rise Time TGH_R − 9 15 ns
GH Fall Time TGH_F 4 9 15 ns
GH Pull-Down Resistance V
BST
– V
SW
= 0 V − 292 −
kW
LOW-SIDE GATE DRIVE
Pull-High Drive On Resistance V
CCP
– V
PGND
= 5 V, R
DRV_LH
− 0.9 2.5
W
Pull-Low Drive On Resistance V
CCP
– V
PGND
= 5 V, R
DRV_LL
− 0.4 1.25
W
GL Propagation Delay Time From GH Falling to GL Rising, T
GL_d
− 11 30 ns
GL Rise Time TGL_R 6 9 15 ns
GL Fall Time TGL_F − 11 15 ns
SW TO PGND RESISTANCE
SW to PGND Pull-Down Resistance R
SW
(Note 1) − 2 −
kW
BOOTSTRAP RECTIFIER SWITCH
Output Low Resistance EN = L or EN = H and DRVL = H, R
on_BST
5 13 21
W
1. Guaranteed by design, not tested in production.
2. T
J
= 25°C
Figure 4. Driver Timing Diagram
NOTE: Timing is referenced to the 10% and the 90% points, unless otherwise stated.
T
GL_f
T
GL_r
T
GH_r
T
GH_f
T
GH_d
T
GL_d
V
TH
V
TH
1 V
SW
GH to SW
GL
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

NCP81255MNTXG

Mfr. #:
Buy NCP81255MNTXG
Manufacturer:
ON Semiconductor
Description:
IC REG CTRLR IMVP8 1OUT 40QFN
Lifecycle:
New from this manufacturer.
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