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KMA200,115

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33
KMA200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 7 December 2011 13 of 33
NXP Semiconductors
KMA200
Programmable angle sensor
10. Characteristics
Table 7. Characteristics
In homogenous magnetic field at saturation field strength of minimum 35 kA/m and external capacitance C
ext
between V
DD
and GND. T
amb
=
40
C to +160
C; V
DD
= 4.5 V to 5.5 V.
Symbol Parameter Conditions Min Typ Max Unit
Supply voltage and operation currents
V
DD
supply voltage normal operation 4.5 5.0 5.5 V
V
DD(pr)
programming supply voltage EEPROM 12 12.5 13 V
I
DD
supply current for normal operation mode 5 - 12 mA
C
L
load capacitance at pin 2 and pin 3 0.1 - 27 nF
R
L(pu)
pull-up load resistance
[1]
5- k
R
L(pd)
pull-down load resistance
[2][3]
5-10k
C
ext
external capacitance between
V
DD
and GND
conducted closely to supply pins of
KMA200
82 - 120 nF
Power-on reset
V
DDon
switch-on threshold voltage KMA200 switches on if
V
DD
>V
DDon
3.1 3.75 4.45 V
V
DDoff
switch-off threshold voltage KMA200 switches off if
V
DD
<V
DDoff
2.9 - 4.4 V
V
hys
hysteresis voltage V
hys
=V
DDon
V
DDoff
0.05 - 0.6 V
System performance
Analog output V
OUT1
: standard output
V
OUT1(nom)
nominal output voltage range on
pin OUT1
5-95%V
DD
V
O(ldr)
lower diagnostic range output
voltage
on OUT1 0 - 4 %V
DD
V
O(udr)
upper diagnostic range output
voltage
on OUT1 96 - 100 %V
DD
max
maximum angle programmable from 0 to angle
range
max
EEPROM address 3
0.1 - 180 deg
V
(CL)u
upper clamping voltage level setting by EEPROM address 9 69.5 - 95 %V
DD
V
(CL)l
lower clamping voltage level setting by EEPROM address 9 5 - 30.5 %V
DD
res
angle resolution 4608 counts in nominal output
voltage range (clamping level
5%V
DD
to 95 %V
DD
)
[4]
- 0.04 0.05 deg
N
o
output noise peak to peak, 25 ms measurement
time
[4]
- - 0.1 deg
V
(CL)
clamping voltage variation at 5 %V
DD
and 95 %V
DD
[4]
0.3 - +0.3 %V
DD

lin
angle linearity error normal operation mode, deviation
from reference line
[4]
1.65 - +1.65 deg

T
angle temperature drift valid for temperature range 25 C
up to +125 C (3 sigma)
[4][5]
0.64 - +0.64 deg

lin
microlinearity deviation at an angle step of 1
[4]
0.1 - +0.1 deg

hys
hysteresis absolute value
[4]
0 - 0.088 deg
KMA200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 7 December 2011 14 of 33
NXP Semiconductors
KMA200
Programmable angle sensor
Analog programmable output V
OUT2
: mode 1
V
OUT2(nom)
nominal output voltage range on
pin OUT2
5-95%V
DD
V
O(ldr)
lower diagnostic range output
voltage
on OUT2 0 - 4 %V
DD
V
O(udr)
upper diagnostic range output
voltage
on OUT2 96 - 100 %V
DD
max
maximum angle programmable from 0 to angle
range
max
EEPROM address 3
0.1 - 180 deg
V
(CL)u
upper clamping voltage level setting by EEPROM address 9 69.5 - 95 %V
DD
V
(CL)l
lower clamping voltage level setting by EEPROM address 9 5 - 30.5 %V
DD
res
angle resolution 4608 counts in nominal output
voltage range (clamping level
5%V
DD
to 95 %V
DD
)
[4]
- 0.04 0.05 deg
N
o
output noise peak to peak, 25 ms measurement
time
[4]
- - 0.1 deg
V
(CL)
clamping voltage variation at 5 %V
DD
and 95 %V
DD
[4]
0.3 - +0.3 %V
DD

lin
angle linearity error normal operation mode, deviation
from reference line
[4]
1.65 - +1.65 deg

T
angle temperature drift valid for temperature range 25 C
up to +125 C (3 sigma)
[4][5]
0.64 - +0.64 deg

lin
microlinearity deviation at an angle step of 1
[4]
0.1 - +0.1 deg

hys
hysteresis absolute value
[4]
0 - 0.088 deg
V
pl(mode1)
plausibility V
OUT1
to V
OUT2
(mode 1)
V
OUT1
+V
OUT2
V
DD
 V
pl(mode1)
[4]
0.5 - +0.5 %V
DD
Table 7. Characteristics …continued
In homogenous magnetic field at saturation field strength of minimum 35 kA/m and external capacitance C
ext
between V
DD
and GND. T
amb
=
40
C to +160
C; V
DD
= 4.5 V to 5.5 V.
Symbol Parameter Conditions Min Typ Max Unit
KMA200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 7 December 2011 15 of 33
NXP Semiconductors
KMA200
Programmable angle sensor
Analog programmable output V
OUT2
: mode 2
V
OUT2(nom)
nominal output voltage range on
pin OUT2
2.5 - 47.5 %V
DD
V
O(ldr)
lower diagnostic range output
voltage
on OUT2 0 - 2 %V
DD
V
O(udr)
upper diagnostic range output
voltage
on OUT2 50 - 100 %V
DD
res
angle resolution 2304 counts in nominal output
voltage range with clamping level
5%V
DD
to 95 %V
DD
[4]
-0.08-deg
max
maximum angle programmable from 0 to angle
range
max
EEPROM address 3
0.1 - 180 deg
N
o
output noise peak to peak, 25 ms measurement
time
[4]
- - 0.2 deg
V
(CL)
clamping voltage variation at 2.5 %V
DD
and 47.5 %V
DD
[4]
0.3 - +0.3 %V
DD

lin
angle linearity error normal operation mode, deviation
from reference line
[4]
2.0 - +2.0 deg

T
angle temperature drift valid for temperature range 25 C
up to +125 C (3 sigma)
[4][5]
0.64 - +0.64 deg

lin
microlinearity deviation at an angle step of 1
[4]
0.2 - +0.2 deg

hys
hysteresis absolute value
[4]
0 - 0.088 deg
V
pl(mode2)
plausibility V
OUT1
to V
OUT2
(mode 2)
V
OUT1
2 V
OUT2
 V
pl(mode2)
0.7 - +0.7 %V
DD
Analog programmable output V
OUT2
: mode 3
V
OUT2(L)
LOW-level output voltage on pin
OUT2
0-10%V
DD
V
OUT2(H)
HIGH-level output voltage on pin
OUT2
90 - 100 %V
DD
th(res)
threshold angle resolution setting by EEPROM address 4 - - 16 bit
Digital output and complement digital output
res(dig)
digital angle resolution - 0.022 - deg/LSB
N
dig
digital noise level noise: 10 measurements in
sequence
--4LSB

lin
angle linearity error normal operation mode from
reference line
1.65 - +1.65 deg

T
angle temperature drift 1.3 - +1.3 deg
valid for temperature range 25 C
up to +125 C (3 sigma)
0.5 - +0.5 deg

lin
microlinearity 0.088 - +0.088 deg

hys
hysteresis absolute value 0 - 0.088 deg
Table 7. Characteristics
…continued
In homogenous magnetic field at saturation field strength of minimum 35 kA/m and external capacitance C
ext
between V
DD
and GND. T
amb
=
40
C to +160
C; V
DD
= 4.5 V to 5.5 V.
Symbol Parameter Conditions Min Typ Max Unit
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KMA200,115

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Manufacturer:
NXP Semiconductors
Description:
Motion & Position Sensors Board Mount Motion & Position Sensors SNSR MAGNETIC TAPE-7
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