KMA200 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 8 — 7 December 2011 16 of 33
NXP Semiconductors
KMA200
Programmable angle sensor
[1] Diagnosis GND and V
DD
lost only possible with a pull-up resistor of 5 k to 6 k.
[2] Diagnosis V
DD
lost only possible with a pull-down resistor of 5 k to 6 k.
[3] Load resistor required to enable the diagnosis features. Infinite resistor load permitted for normal operation without the diagnosis
features.
[4] Analog outputs need to be low-pass filtered (corner frequency about 1.3 kHz).
[5] See Figure 9
.
On-chip temperature sensor characteristics
T
sen
sensor temperature chip temperature 50 - +180 C
T
sen(res)
sensor temperature resolution chip temperature - 2 - C/LSB
T
sen
sensor temperature accuracy chip temperature 5- +5C
T
warn(res)
warning temperature resolution setting by EEPROM address 6 - 2 - C
T
shut(res)
shut-down temperature
resolution
setting by EEPROM address 6 - 2 - C
SPI characteristics
V
IL
LOW-level input voltage for V
X
=CLK, CS, DATA 0 - 25 %V
DD
V
IH
HIGH-level input voltage for V
X
=CLK, CS, DATA 75 - 100 %V
DD
V
OL
LOW-level output voltage I
sink
<2mA 0 - 15 %V
DD
V
OH
HIGH-level output voltage I
source
<2mA 85 - 100 %V
DD
I
OM
peak output current current limitation of the device - - 20 mA
t
r(o)
output rise time normal operation mode from
10 %V
DD
to 90 %V
DD
, C
L
= 100 pF
(SL bit = 0) 100 - 400 ns
(SL bit = 1) 500 - 1300 ns
t
f(o)
output fall time
(SL bit = 0) 100 - 400 ns
(SL bit = 1) 500 - 1300 ns
f
clk
clock frequency for V
X
= CLK 1 - 1000 kHz
Dynamics
t
pu
power-up time until first valid result - - 10 ms
f
upd(meas)
measurement update rate at oscillator frequency 3 4 5 kHz
t
s
settling time after ideal input angle step until
analog standard output reaches
90 % of final value, at nominal
oscillator frequency, C
L
=5nF
-11.8ms
Table 7. Characteristics …continued
In homogenous magnetic field at saturation field strength of minimum 35 kA/m and external capacitance C
ext
between V
DD
and GND. T
amb
=
40
C to +160
C; V
DD
= 4.5 V to 5.5 V.
Symbol Parameter Conditions Min Typ Max Unit
