MTFDDAK256TBN-1AR15FCYY Datasheet MTFDDAV512TBN-1AR1ZTAYY, MTFDDAV512TBN-1AR12TAYY, MTFDDAK256TBN-1AR15FCYY | P7-P9

Endurance

Endurance for the SSD can be predicted based on the usage conditions applied to the

device, the internal NAND component cycles, the write amplification factor, and the

wear-leveling efficiency of the drive. The table below shows the drive lifetime for each

SSD capacity by client computing and sequential input and based on predefined usage

conditions.

Table 5: Drive Lifetime – Client Computing

Capacity Drive Lifetime (Total Bytes Written)

256GB 120TB

512GB 240TB

1024GB 400TB

2048GB

Notes:

1. Total bytes written validated with the drive 90% full.

2. SSD volatile write cache is enabled.

3. Access patterns used during reliability testing are 25% sequential and 75% random and

consist of the following: 1% are 512B; 44% are 4 KiB; 35% are 64 KiB; and 20% are 128

KiB.

4. Host workload parameters, including write cache settings, I/O alignment, transfer sizes,

randomness, and percent full, that are substantially different than the described notes

may result in varied endurance results.

5. GB/day can be calculated by dividing the total bytes written value by the number of

days in the interval of interest (365 days × number of years). For example: 100 TB/3

years/365 days = 91 GB/day for 3 years.

1100 2.5-Inch and M.2 NAND Flash SSD

Reliability

CCMTD-1725822587-10292

1100_ssd.pdf - Rev. C 12/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Electrical Characteristics

Environmental conditions beyond those listed may cause permanent damage to the de-

vice. This is a stress rating only, and functional operation of the device at these or any

other conditions above those indicated in the operational sections of this specification

is not implied. Exposure to absolute maximum rating conditions for extended periods

may affect reliability.

Table 6: SATA Power Consumption

Capacity

Device Sleep

Typical Idle Average Active Average

Active Maximum

(128KB transfer) Unit

256GB 2 55 70 3000 mW

512GB 4000

1024GB 4 65 75 5000 mW

2048GB 25 110 150 6000

Notes:

1. Data taken at 25°C using a 6 Gb/s SATA interface.

2. Active average power measured while running MobileMark productivity suite.

3. Device-initiated power management (DIPM) enabled. DIPM slumber and DEVSLP ena-

bled.

4. Active maximum power is an average power measurement performed using Iometer

with 128KB sequential write transfers.

Table 7: Maximum Ratings

Parameter/Condition Symbol Min Max Unit Notes

Voltage input, 2.5-inch V5 4.5 5.5 V –

Voltage input, M.2 3V3 3.14 3.46 V –

Operating temperature T

0 70 °C 1

Non-operating temperature – –40 85 °C –

Rate of temperature change – – 20 °C/hour –

Relative humidity (non-condensing) – 5 95 % –

Note:

1. Operating temperature is best measured by reading the SSD's on-board temperature

sensor, which is recorded in SMART attribute 194 (0xC2).

Table 8: Shock and Vibration

Parameter/Condition Specification

Non-operating shock 1500G/0.5ms

Non-operating vibration 5–800Hz @ 3.10G

1100 2.5-Inch and M.2 NAND Flash SSD

Electrical Characteristics

CCMTD-1725822587-10292

1100_ssd.pdf - Rev. C 12/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Dynamic Write Acceleration

Dynamic write acceleration optimizes SSD performance for typical client-computing

environments, where WRITE operations tend to occur in bursts of commands with idle

time between these bursts.

Capacity for accelerated performance is derived from the adaptive usage of the SSD's

native NAND array, without sacrificing user-addressable storage. Recent advances in

Micron NAND technology enable the SSD firmware to achieve acceleration through on-

the-fly mode switching between SLC and TLC modes to create a high-speed SLC pool

that changes in size and location with usage conditions.

During periods of idle time between write bursts, the drive may free additional capacity

for accelerated write performance. The amount of accelerated capacity recovered dur-

ing idle time depends on the portion of logical addresses that contain user data and

other runtime parameters. In applications that do not provide sufficient idle time, the

device may need to perform SLC-to-TLC data migration during host activity.

Under accelerated operation, write performance may be significantly higher than non-

accelerated operations. Power consumption per-byte written is lower during acceler-

ated operation, which may reduce overall power consumption and heat production.

1100 2.5-Inch and M.2 NAND Flash SSD

Dynamic Write Acceleration

CCMTD-1725822587-10292

1100_ssd.pdf - Rev. C 12/16 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P21 P22-P24 P25-P27 P28-P30 P31-P33 P34-P36 P37-P39 P40-P41

MTFDDAK256TBN-1AR15FCYY

Mfr. #:

Buy MTFDDAK256TBN-1AR15FCYY

Manufacturer:

Micron

Description:

Solid State Drives - SSD 1100 256GB 2.5in SSD

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

MTFDDAK256TBN-1AR15FCYY

MTFDDAK256TBN-1AR15FCYY

Products related to this Datasheet