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SUM90140E-GE3

P1-P3P4-P6P7-P9
SUM90140E
www.vishay.com
Vishay Siliconix
S15-2641-Rev. A, 16-Nov-15
1
Document Number: 79035
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 200 V (D-S) 175 °C MOSFET
Ordering Information:
SUM90140E-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET
®
power MOSFET
• Maximum 175 °C junction temperature
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Power supplies:
- Uninterruptible power supplies
- AC/DC switch-mode power supplies
- Lighting
• Synchronous rectification
•DC/DC converter
• Motor drive switch
• DC/AC inverter
• Solar micro inverter
• Class D audio amplifier
Notes
a. Duty cycle 1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
() MAX. I
D
(A) Q
g
(TYP.)
200
0.017 at V
GS
= 10 V 90
64 nC
0.018 at V
GS
= 7.5 V 88
TO-263
Top View
G
D
S
G
D
S
N-Channel MOSFET
G
D
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
200
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
90
A
T
C
= 70 °C 75
Pulsed Drain Current (t = 100 μs) I
DM
240
Avalanche Current
L = 0.1 mH
I
AS
60
Single Avalanche Energy
a
E
AS
180 mJ
Maximum Power Dissipation
a
T
C
= 25 °C
P
D
375
b
W
T
C
= 125 °C 125
b
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient (PCB Mount)
c
R
thJA
40
°C/W
Junction-to-Case (Drain) R
thJC
0.4
SUM90140E
www.vishay.com
Vishay Siliconix
S15-2641-Rev. A, 16-Nov-15
2
Document Number: 79035
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 200 - -
V
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2 - 4
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 250 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= 200 V, V
GS
= 0 V - - 1
μA
V
DS
= 200 V, V
GS
= 0 V, T
J
= 125 °C - - 150
V
DS
= 200 V, V
GS
= 0 V, T
J
= 175 °C - - 5 mA
On-State Drain Current
a
I
D(on)
V
DS
10 V, V
GS
= 10 V 90 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 30 A - 0.0138 0.0170
V
GS
= 7.5 V, I
D
= 30 A - 0.0141 0.0180
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A - 75 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V, V
DS
= 100 V, f = 1 MHz
- 4132 -
pFOutput Capacitance C
oss
- 246 -
Reverse Transfer Capacitance C
rss
-21-
Total Gate Charge
c
Q
g
V
DS
= 100 V, V
GS
= 10 V, I
D
= 60 A
-6496
nCGate-Source Charge
c
Q
gs
- 16.7 -
Gate-Drain Charge
c
Q
gd
- 16.9 -
Gate Resistance R
g
f = 1 MHz 1.5 3 5
Turn-On Delay Time
c
t
d(on)
V
DD
= 100 V, R
L
= 1.66
I
D
60 A, V
GEN
= 10 V, R
g
= 1
-1326
ns
Rise Time
c
t
r
- 112 200
Turn-Off Delay Time
c
t
d(off)
-3570
Fall Time
c
t
f
-80150
Drain-Source Body Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Pulsed Current (t = 100 μs) I
SM
--240A
Forward Voltage
a
V
SD
I
F
= 10 A, V
GS
= 0 V - 0.8 1.2 V
Reverse Recovery Time t
rr
I
F
= 30 A, di/dt = 100 A/μs
- 160 320 ns
Peak Reverse Recovery Charge I
RM(REC)
-1120A
Reverse Recovery Charge Q
rr
-0.91.8μC
SUM90140E
www.vishay.com
Vishay Siliconix
S15-2641-Rev. A, 16-Nov-15
3
Document Number: 79035
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
30
60
90
120
150
024 6810
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
V
GS
=4 V
V
GS
= 10 V thru 6 V
V
GS
= 5 V
0
20
40
60
80
100
0 6 12 18 24 30
g
fs
-Transconductance (S)
I
D
-Drain Current (A)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0
1400
2800
4200
5600
7000
0 20406080100
C - Capacitance (pF)
V
DS
-Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0
30
60
90
120
150
0246810
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= - 55 °C
0.012
0.013
0.014
0.015
0.016
0.017
0 20406080100
R
DS(on)
-On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 7.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 13 2639 5265
V
GS
- Gate-to-Source Voltage (V)
Q
g
-Total Gate Charge (nC)
V
DS
= 150 V
V
DS
= 100 V
V
DS
= 50 V
I
D
= 60 A
P1-P3P4-P6P7-P9

SUM90140E-GE3

Mfr. #:
Buy SUM90140E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 200V Vds 20V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Delivery:
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