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SUM90140E-GE3

P1-P3P4-P6P7-P9
SUM90140E
www.vishay.com
Vishay Siliconix
S15-2641-Rev. A, 16-Nov-15
4
Document Number: 79035
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Source Drain Diode Forward Voltage
Threshold Voltage
Drain Source Breakdown vs. Junction Temperature
Current De-rating
0.5
1
1.5
2
2.5
3
- 50 - 25 0 25 50 75 100 125 150 175
R
DS(on)
-On-Resistance (Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 7.5 V, I
D
= 30 A
V
GS
= 10 V, I
D
= 30 A
0
0.01
0.02
0.03
0.04
0.05
0246810
R
DS(on)
-On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 30 A
1.6
2
2.4
2.8
3.2
3.6
- 50 - 25 0 25 50 75 100 125 150 175
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
210
220
230
240
250
260
- 50 - 25 0 25 50 75 100 125 150 175
V
DS
(V) Drain-to-Source Voltage
T
J
- Temperature (°C)
I
D
= 250 μA
0
20
40
60
80
100
0 255075100125150175
I
D
- Drain Current (A)
T
C
-Case Temperature (°C)
SUM90140E
www.vishay.com
Vishay Siliconix
S15-2641-Rev. A, 16-Nov-15
5
Document Number: 79035
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Safe Operating Area Single Pulse Avalanche Current Capability vs. Time
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
1000
0.1 1 10 100 1000
I
D
- Drain Current (A)
V
DS
-Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
Limited by R
DS(on)
*
100 μs
I
DM
Limited
T
C
= 25 °C
Single Pulse
BVDSS Limited
1 ms
100 ms, DC
10 ms
I
D
Limited
1
10
100
0.00001 0.0001 0.001 0.01 0.1
I
DAV
(A)
Time (s)
150 °C
25 °C
10
-4
10
-3
10
-2
10
-1
1 10 100 1000
1
0.01
0.001
0.1
0.0001
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
SUM90140E
www.vishay.com
Vishay Siliconix
S15-2641-Rev. A, 16-Nov-15
6
Document Number: 79035
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
THERMAL RATINGS (T
A
= 25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction to Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction to Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?79035
.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9

SUM90140E-GE3

Mfr. #:
Buy SUM90140E-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 200V Vds 20V Vgs D2PAK (TO-263)
Lifecycle:
New from this manufacturer.
Delivery:
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