VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1 Protection features
Doc ID 7383 Rev 4 19/37
3.4 SOT-223 maximum demagnetization energy
Figure 34. SOT-223 maximum turn-off current versus load inductance
Legend
A = Single Pulse at T
Jstart
=150 °C
B = Repetitive pulse at T
Jstart
=100 °C
C = Repetitive Pulse at T
Jstart
=125 °C
Conditions:
V
CC
=13.5 V
Values are generated with R
L
=0 Ω. In case of repetitive pulses, T
jstart
(at beginning of each
demagnetization) of every pulse must not exceed the temperature specified above for
curves B and C.
Figure 35. SOT-223 demagnetization
1
10
100
0.01 0.1 1 10
L(mH)
I
LMAX (A)
V
IN
, I
L
t
Demagnetization
Demagnetization
Demagnetization
Package and PCB thermal data VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
20/37 Doc ID 7383 Rev 4
4 Package and PCB thermal data
4.1 SO-8 thermal data
Figure 36. SO-8 PC board
Note: Layout condition of R
th
and Z
th
measurements (PCB FR4 area=58 mm x 58 mm, PCB
thickness=2 mm, Cu thickness=35 µm, Copper areas: 0.14 cm
2
, 0.8 cm
2
, 2 cm
2
).
Figure 37. R
thj-amb
vs PCB copper area in open box free air condition
70
75
80
85
90
95
100
105
110
00.511.522.5
PCB Cu heatsink area (cm^2)
RTHj_amb (ºC/W)
SO-8 at 2 pins connected to TAB
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1 Package and PCB thermal data
Doc ID 7383 Rev 4 21/37
Figure 38. SO-8 thermal impedance junction ambient single pulse
Figure 39. Thermal fitting model of an OMNIFET II in SO-8
Equation 1 Pulse calculation formula
where
Table 5. SO-8 thermal parameter
Area/island (cm
2
)Footprint2
R1 (°C/W) 0.2
R2 (°C/W) 0.9
R3 (°C/W) 3.5
R4 (°C/W) 21
R5 (°C/W) 16
R6 (°C/W) 58 28
C1 (W.s/°C) 3.00E-04
0.1
1
10
100
1000
0.0001 0.001 0.01 0.1 1 10 100 1000
Time (s)
ZTH (°C/W)
T_amb
C1
R1 R2
C2
R3
C3
R4
C4
R5
C5
R6
C6
Pd
Tj
Z
THδ
R
TH
δ Z
THtp
1 δ()+=
δ t
p
T=

VND7NV0413TR

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Gate Drivers N-Ch 42V 6A OmniFET
Lifecycle:
New from this manufacturer.
Delivery:
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