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VND7NV0413TR

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P37
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1 Electrical specifications
Doc ID 7383 Rev 4 7/37
2 Electrical specifications
Figure 3. Current and voltage conventions
2.1 Absolute maximum ratings
DRAIN
INPUT
SOURCE
I
D
I
IN
V
IN
V
DS
R
IN
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
SOT-223 SO-8 DPAK/IPAK
V
DS
Drain-source voltage (V
IN
=0 V) Internally clamped V
V
IN
Input voltage Internally clamped V
I
IN
Input current +/-20 mA
R
IN MIN
Minimum input series impedance 150 Ω
I
D
Drain current Internally limited A
I
R
Reverse DC output current -10.5 A
V
ESD1
Electrostatic discharge (R=1.5 KΩ,
C=100 pF)
4000 V
V
ESD2
Electrostatic discharge on output pin
only (R=330 Ω, C=150 pF)
16500 V
P
tot
Total dissipation at T
c
=25 °C 7 4.6 60 W
E
MAX
Maximum switching energy
(L=0.7 mH; R
L
=0 Ω; V
bat
=13.5 V;
T
jstart
=150 ºC; I
L
=9 A)
40 40 mJ
E
MAX
Maximum switching energy
(L=0.6 mH; R
L
=0 Ω; V
bat
=13.5 V;
T
jstart
=150 ºC; I
L
=9 A)
37 mJ
T
j
Operating junction temperature Internally limited °C
T
c
Case operating temperature Internally limited °C
T
stg
Storage temperature -55 to 150 °C
Electrical specifications VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
8/37 Doc ID 7383 Rev 4
2.2 Thermal data
2.3 Electrical characteristics
-40 °C < T
j
< 150 °C, unless otherwise specified.
Table 3. Thermal data
Symbol Parameter
Value
Unit
SOT-223 SO-8 DPAK IPAK
R
thj-case
Thermal resistance junction-case max 18 2.1 2.1 °C/W
R
thj-lead
Thermal resistance junction-lead max 27 °C/W
R
thj-amb
Thermal resistance junction-ambient max 96
(1)
90
(1)
65
(1)
102 °C/W
1. When mounted on a standard single-sided FR4 board with 0.5 mm
2
of Cu (at least 35 µm thick) connected to all DRAIN
pins.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min Typ Max Unit
Off
V
CLAMP
Drain-source clamp
voltage
V
IN
=0 V; I
D
=3.5 A 40 45 55 V
V
CLTH
Drain-source clamp
threshold voltage
V
IN
=0 V; I
D
=2 mA 36 V
V
INTH
Input threshold voltage V
DS
=V
IN
; I
D
=1 mA 0.5 2.5 V
I
ISS
Supply current from input
pin
V
DS
=0 V; V
IN
=5 V 100 150 µA
V
INCL
Input-source clamp
voltage
I
IN
=1 mA
I
IN
=-1 mA
6
-1.0
6.8 8
-0.3
V
I
DSS
Zero input voltage drain
current (V
IN
=0 V)
V
DS
=13 V; V
IN
=0 V; T
j
=25 °C
V
DS
=25 V; V
IN
=0 V
30
75
µA
On
R
DS(on)
Static drain-source on
resistance
V
IN
=5 V; I
D
=3.5 A; T
j
=25 °C
V
IN
=5 V; I
D
=3.5 A
60
120
mΩ
Dynamic (T
j
=25 °C, unless otherwise specified)
g
fs
(1)
Forward
transconductance
V
DD
=13 V; I
D
=3.5 A 9 S
C
OSS
Output capacitance V
DS
=13 V; f=1 MHz; V
IN
=0 V 220 pF
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1 Electrical specifications
Doc ID 7383 Rev 4 9/37
Switching
(T
j
=25 °C, unless otherwise specified)
t
d(on)
Turn-on delay time
V
DD
=15 V; I
D
=3.5 A
V
gen
=5 V; R
gen
=R
IN MIN
=150 Ω
(see figure Figure 4.)
100 300 ns
t
r
Rise time 470 1500 ns
t
d(off)
Turn-off delay time 500 1500 ns
t
f
Fall time 350 1000 ns
t
d(on)
Turn-on delay time
V
DD
=15 V; I
D
=3.5 A
V
gen
=5 V; R
gen
=2.2 KΩ
(see figure Figure 4.)
0.75 2.3 µs
t
r
Rise time 4.6 14.0 µs
t
d(off)
Turn-off delay time 5.4 16.0 µs
t
f
Fall time 3.6 11.0 µs
(dI/dt)
on
Turn-on current slope
V
DD
=15 V; I
D
=3.5 A
V
gen
=5 V; R
gen
=R
IN MIN
=150 Ω
6.5 A/µs
Q
i
Total input charge
V
DD
=12 V; I
D
=3.5 A; V
IN
=5 V
I
gen
=2.13 mA (see figure Figure 7.)
18 nC
Source drain diode (T
j
=25 °C, unless otherwise specified)
V
SD
(1)
Forward on voltage I
SD
=3.5 A; V
IN
=0 V 0.8 V
t
rr
Reverse recovery time
I
SD
=3.5 A; dI/dt=20 A/µs
V
DD
=30V; L=200µH
(see test circuit, figure Figure 5.)
220 ns
Q
rr
Reverse recovery charge 0.28 µC
I
RRM
Reverse recovery current 2.5 A
Protections (-40 °C < T
j
< 150 °C, unless otherwise specified)
I
lim
Drain current limit V
IN
=5 V; V
DS
=13 V 6 9 12 A
t
dlim
Step response current
limit
V
IN
=5 V; V
DS
=13 V 4.0 µs
T
jsh
Over temperature
shutdown
150 175 200 °C
T
jrs
Over temperature reset 135 °C
I
gf
Fault sink current V
IN
=5 V; V
DS
=13 V; T
j
=T
jsh
15 mA
E
as
Single pulse avalanche
energy
starting T
j
=25 °C; V
DD
=24 V
V
IN
=5 V R
gen
=R
IN MIN
=150 Ω; L=24 mH
(see figures Figure 6. & Figure 8.)
200 mJ
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Table 4. Electrical characteristics (continued)
Symbol Parameter Test conditions Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P30P31-P33P34-P36P37-P37

VND7NV0413TR

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Buy VND7NV0413TR
Manufacturer:
STMicroelectronics
Description:
Gate Drivers N-Ch 42V 6A OmniFET
Lifecycle:
New from this manufacturer.
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