OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NCN5193MNTWG

P1-P3P4-P6P7-P9P10-P12P13-P14
© Semiconductor Components Industries, LLC, 2016
September, 2016 − Rev. 3
1 Publication Order Number:
NCN5193/D
NCN5193
HART Modem
Description
The NCN5193 is a single−chip, CMOS modem for use in highway
addressable remote transducer (HART) field instruments and masters.
The modem and a few external passive components provide all of the
functions needed to satisfy HART physical layer requirements
including modulation, demodulation, receive filtering, carrier detect,
and transmit−signal shaping. In addition, the NCN5193 also has an
integrated DAC for low-BOM current loop slave transmitter
implementation.
The NCN5193 uses phase continuous frequency shift keying (FSK)
at 1200 bits per second. To conserve power the receive circuits are
disabled during transmit operations and vice versa. This provides the
half−duplex operation used in HART communications.
Features
• Single−chip, Half−duplex 1200 Bits per Second FSK Modem
• Bell 202 Shift Frequencies of 1200 Hz and 2200 Hz
• 1.8 V − 3.5 V Power Supply
• Transmit−signal Wave Shaping
• Receive Band−pass Filter
• Low Power: Optimal for Intrinsically Safe Applications
• Compatible with 1.8 V or 3.3 V Microcontroller
• Internal Oscillator Requires 460.8 kHz, 920 kHz, 1.84 MHz or
3.68 MHz Crystal or Ceramic Resonator
• SPI Communication
• Integrated 17 bit Sigma-Delta DAC
• Meets HART Physical Layer Requirements
• Industrial Temperature Range of −40°C to +85°C
• Available in 32−pin NQFP Package
• These are Pb−Free Devices
Applications
• HART Multiplexers
• HART Modem Interfaces
• 4 − 20 mA Loop Powered Transmitters
www.onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
ORDERING INFORMATION
MARKING
DIAGRAM
NCN5193 = Specific Device Code
A = Assembly Location
WL = Wafer Lot
YY = Year
WW = Work Week
G = Pb−Free Package
32
1
QFN32
CASE 488AM
NCN
5193
AWLYYWWG
G
1
(Note: Microdot may be in either location)
NCN5193
www.onsemi.com
2
BLOCK DIAGRAM
Figure 1. Block Diagram NCN5193
Demodulator
Logic
Filter Amplifier
Rx Comp
Carrier Detect
Counter
Carrier Comp
Sine
Shaper
Numeric
Controlled
Oscillator
DEMODULATOR
MODULATOR
Crystal
Oscillator
POR BIAS
NCN5193
RxAFVDD
RxAP
RxAFI
RxD
AREF
CDREF
TxA
CD
TxD
RTS
RESET
CBIAS
VDDA
VSS
FSK_OUT
FSK_IN
XIN
XOUT
VPOR
JUMP
CS
SCLK
DATA
DAC
DACREF
CLK2
CLK1
SPI DAC
KICK
RxAN
Registers
MODE
TEST1
TEST2
ELECTRICAL SPECIFICATIONS
Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter Min Max Units
T
A
Ambient Temperature −40 +85 °C
T
S
Storage Temperature −55 +150 °C
T
J
Junction Temperature −40 +150 °C
V
DD
Supply Voltage −0.3 4.0 V
V
IN
, V
OUT
DC Input, Output −0.3 V
DD
+ 0.3 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. CMOS devices are damaged by high−energy electrostatic discharge. Devices must be stored in conductive foam or with all pins shunted.
Precautions should be taken to avoid application of voltages higher than the maximum rating. Stresses above absolute maximum ratings
may result in damage to the device.
NCN5193
www.onsemi.com
3
Table 2. DC CHARACTERISTICS (V
DD
= 1.8 V to 3.5 V, V
SS
= 0 V, T
A
= −40°C to +85°C)
Symbol
Parameter V
DD
Min Typ Max Units
V
DD
DC Supply Voltage 1.8 3.5 V
V
IL
Input Voltage, Low 1.8 – 3.5 V 0.2 * V
DD
V
V
IH
Input Voltage, High 1.8 – 3.5 V 0.8 * V
DD
V
V
OL
Output Voltage, Low (I
OL
= 0.67 mA) 1.8 – 3.5 V 0.4 V
V
OH
Output Voltage, High (I
OH
= −0.67 mA) 1.8 – 3.5 V V
DD
− 0.4 V
I
IL
/I
IH
Input Leakage Current ±1
mA
I
DD
Total Power Supply Current 70 190 500
mA
I
DDA
Static Analog Supply Current 45 270
mA
I
DDQ
Static Digital Current 0 30
mA
I
DDD
Dynamic Digital Current 25 200
mA
A
REF
Analog Reference 1.2 1.235 2.6 V
CD
REF
(Note 2)
Carrier Detect Reference (A
REF
– 0.08 V) 1.15 V
I
BIAS
Comparator Bias Current
(R
BIAS
= 120 kW, A
REF
= 1.235 V)
10
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. The HART specification requires carrier detect (CD) to be active between 80 and 120 mVp−p. Setting CD
REF
at A
REF
− 0.08 VDC will set
the carrier detect to a nominal 100 mVp−p.
Table 3. AC CHARACTERISTICS (V
DD
= 1.8 V to 3.5 V, V
SS
= 0 V, T
A
= −40°C to +85°C) (Note 3)
Pin Name
Description Min Typ Max Units
RxAP, RxAN Receive analog input
Leakage current
Frequency – mark (logic 1)
Frequency – space (logic 0)
1190
2180
1200
2200
±150
1210
2220
nA
Hz
Hz
RxAF Output of the high−pass filter
Slew rate
Gain bandwidth (GBW)
Voltage range
300
0.15
0.04
V
DD
– 0.15
V/ms
kHz
V
RxAFI Carrier detect and receive filter input
Leakage current
±500 nA
TxA Modulator output
Frequency – mark (logic 1)
Frequency – space (logic 0)
Amplitude (IAREF 1.235 V)
Slew Rate − mark (logic 1)
Slew Rate − space (logic 0)
Loading (IAREF = 1.235 V)
30
1196.9
2194.3
500
1860
3300
Hz
Hz
mV
V/s
V/s
kW
RxD Receive digital output
Rise/fall time
20
ns
CD Carrier detect output
Rise/fall time
20
ns
3. The modulator output frequencies are proportional to the input clock frequency (460.8 kHz/920 kHz/1.84 MHz / 3.68 MHz).
P1-P3P4-P6P7-P9P10-P12P13-P14

NCN5193MNTWG

Mfr. #:
Buy NCN5193MNTWG
Manufacturer:
ON Semiconductor
Description:
Interface - Specialized NCN5193
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet