DDR4 SDRAM RDIMM
MTA9ADF1G72PZ – 8GB
Features
• DDR4 functionality and operations supported as
defined in the component data sheet
• 288-pin, registered very low profile dual in-line
memory module (VLP RDIMM)
• Fast data transfer rates: PC4-3200, PC4-2666
• 8GB (1 Gig x 72)
• V
DD
= 1.20V (NOM)
• V
PP
= 2.5V (NOM)
• V
DDSPD
= 2.5V (NOM)
• Supports ECC error detection and correction
• Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
• Low-power auto self refresh (LPASR)
• Data bus inversion (DBI) for data bus
• On-die V
REFDQ
generation and calibration
• Single-rank
• On-board I
2
C temperature sensor with integrated
serial presence-detect (SPD) EEPROM
• 16 internal banks; 4 groups of 4 banks each
• Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
• Selectable BC4 or BL8 on-the-fly (OTF)
• Gold edge contacts
• Halogen-free
• Fly-by topology
• Terminated control, command, and address bus
Figure 1: 288-Pin VLP RDIMM (MO-309, R/C-G,
PCB 2355)
Module height: 18.75mm (0.738in)
Figure 2: 288-Pin VLP RDIMM (MO-309, R/C-G,
PCB 2462)
Module height: 18.75mm (0.738in)
Options
Marking
• Operating temperature
– Commercial (0°C ≤ T
OPER
≤ +95°C) None
• Package
– 288-pin DIMM (halogen-free) Z
• Frequency/CAS latency
– 0.62ns @ CL = 22 (DDR4-3200) -3G2
– 0.75ns @ CL = 19 (DDR4-2666) -2G6
Table 1: Key Timing Parameters
Speed
Grade
PC4-
Data Rate (MT/s)
CL =
t
RCD
(ns)
t
RP
(ns)
t
RC
(ns)24
22/
21 20 19 18 17 16 15 14 13 12 11 10 9
-3G2 3200 3200 3200/
–
2666 2666 2666,
2400
2400 2133 2133 1866 1866 1600 1600 1333 – 13.75 13.75 45.75
-2G9 2933 – 2933/
2933
2666 2666 2400 2400 2133 2133 1866 1866 1600 1600 – – 14.32 14.32 46.32
-2G6 2666 – – 2666 2666 2666 2400 2133 2133 1866 1866 1600 1600 1333 – 14.16 14.16 46.16
-2G3 2400 – – – – 2400 2400 2133 2133 1866 1866 1600 1600 1333 – 14.16 14.16 46.16
8GB (x72, ECC, SR) 288-Pin DDR4 VLP RDIMM
Features
PDF: CCMTD-1725822587-9935
adf9c1gx72pz.pdf - Rev. D 9/17 EN
1
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Products and specifications discussed herein are subject to change by Micron without notice.