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MTA9ADF1G72PZ-2G6D1

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR4 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 13: Module and Component Speed Grades
DDR4 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-3G2 -062E
-2G9 -068
-2G6 -075
-2G3 -083
-2G1 -093E
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level. Mi-
cron encourages designers to simulate the signal characteristics of the system's memo-
ry bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the edge connector of the module, not at the DRAM.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
8GB (x72, ECC, SR) 288-Pin DDR4 VLP RDIMM
DRAM Operating Conditions
PDF: CCMTD-1725822587-9935
adf9c1gx72pz.pdf - Rev. D 9/17 EN
19
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 14: DDR4 I
DD
Specifications and Conditions – 8GB (Die Revision D)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 2666 Units
One bank ACTIVATE-PRECHARGE current I
DD0
459 mA
One bank ACTIVATE-PRECHARGE, word line boost, I
PP
current I
PP0
27 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
567 mA
Precharge standby current I
DD2N
315 mA
Precharge standby ODT current I
DD2NT
450 mA
Precharge power-down current I
DD2P
225 mA
Precharge quiet standby current I
DD2Q
270 mA
Active standby current I
DD3N
459 mA
Active standby I
PP
current I
PP3N
27 mA
Active power-down current I
DD3P
351 mA
Burst read current I
DD4R
1314 mA
Burst write current I
DD4W
1233 mA
Burst refresh current (1 x REF) I
DD5R
549 mA
Burst refresh I
PP
current (1 x REF) I
PP5R
45 mA
Self refresh current: Normal temperature range (0°C to +85°C) I
DD6N
279 mA
Self refresh current: Extended temperature range (0°C to +95°C) I
DD6E
324 mA
Self refresh current: Reduced temperature range (0°C to +45°C) I
DD6R
189 mA
Auto self refresh current (25°C) I
DD6A
77.4 mA
Auto self refresh current (45°C) I
DD6A
189 mA
Auto self refresh current (75°C) I
DD6A
279 mA
Auto self refresh I
PP
current I
PP6X
45 mA
Bank interleave read current I
DD7
1620 mA
Bank interleave read I
PP
current I
PP7
135 mA
Maximum power-down current I
DD8
225 mA
8GB (x72, ECC, SR) 288-Pin DDR4 VLP RDIMM
I
DD
Specifications
PDF: CCMTD-1725822587-9935
adf9c1gx72pz.pdf - Rev. D 9/17 EN
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
Table 15: DDR4 I
DD
Specifications and Conditions – 8GB (Die Revision E)
Values are for the MT40A1G8 DDR4 SDRAM only and are computed from values specified in the 8Gb (1 Gig x 8) compo-
nent data sheet
Parameter Symbol 3200 Units
One bank ACTIVATE-PRECHARGE current I
DD0
513 mA
One bank ACTIVATE-PRECHARGE, word line boost, I
PP
current I
PP0
27 mA
One bank ACTIVATE-READ-PRECHARGE current I
DD1
621 mA
Precharge standby current I
DD2N
333 mA
Precharge standby ODT current I
DD2NT
540 mA
Precharge power-down current I
DD2P
225 mA
Precharge quiet standby current I
DD2Q
270 mA
Active standby current I
DD3N
504 mA
Active standby I
PP
current I
PP3N
27 mA
Active power-down current I
DD3P
387 mA
Burst read current I
DD4R
1512 mA
Burst write current I
DD4W
1395 mA
Burst refresh current (1 x REF) I
DD5R
594 mA
Burst refresh I
PP
current (1 x REF) I
PP5R
45 mA
Self refresh current: Normal temperature range (0°C to +85°C) I
DD6N
279 mA
Self refresh current: Extended temperature range (0°C to +95°C) I
DD6E
324 mA
Self refresh current: Reduced temperature range (0°C to +45°C) I
DD6R
189 mA
Auto self refresh current (25°C) I
DD6A
77.4 mA
Auto self refresh current (45°C) I
DD6A
189 mA
Auto self refresh current (75°C) I
DD6A
279 mA
Auto self refresh I
PP
current I
PP6X
45 mA
Bank interleave read current I
DD7
2070 mA
Bank interleave read I
PP
current I
PP7
180 mA
Maximum power-down current I
DD8
225 mA
8GB (x72, ECC, SR) 288-Pin DDR4 VLP RDIMM
I
DD
Specifications
PDF: CCMTD-1725822587-9935
adf9c1gx72pz.pdf - Rev. D 9/17 EN
21
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2015 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P25

MTA9ADF1G72PZ-2G6D1

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Buy MTA9ADF1G72PZ-2G6D1
Manufacturer:
Micron
Description:
Memory Modules DDR4 8GB RDIMM VLP
Lifecycle:
New from this manufacturer.
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