7
IDT70T633/1S
High-Speed 2.5V 512/256K x 18 Asynchronous Dual-Port Static RAM Industrial and Commercial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
(1)
Recommended DC Operating
Conditions with V
DDQ at 2.5V
Absolute Maximum Ratings
(1)
NOTES:
1. V
IL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less.
2. V
IH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is
less.
3. To select operation at 2.5V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
SS (0V), and VDDQX for that port must be
supplied as indicated above.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. This is a steady-state DC parameter that applies after the power supply has
reached its nominal operating value. Power sequencing is not necessary;
however, the voltage on any Input or I/O pin cannot exceed V
DDQ during power
supply ramp up.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
NOTE:
1. This is the parameter T
A. This is the "instant on" case temperature.
Grade
Ambient
Temperature GND V
DD
Commercial 0
O
C to +70
O
C0V2.5V
+
100mV
Industrial -40
O
C to +85
O
C0V2.5V
+
100mV
5670 tbl 04
Symbol Rating Commercial
& Industrial
Unit
V
TERM
(V
DD
)
V
DD
Te rmin al Vo l ta g e
with Respect to GND
-0.5 to 3.6 V
V
TERM
(2)
(V
DDQ
)
V
DDQ
Terminal Voltage
with Respect to GND
-0.3 to V
DDQ
+ 0.3 V
V
TE RM
(2)
(INPUTS and I/O's)
Input and I/O Te rminal
Voltage with Respect to GND
-0.3 to V
DDQ
+ 0.3 V
T
BIAS
(3)
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-65 to +150
o
C
T
JN
Junction Temperature +150
o
C
I
OUT
(For V
DDQ
=
3.3V) DC Output Current 50 mA
I
OUT
(For V
DDQ
=
2.5V) DC Output Current 40 mA
5670 tbl 07
Symbol Parameter Min. Typ. Max. Unit
V
DD
Core Supply Voltage 2.4 2.5 2.6 V
V
DDQ
I/O Supply Voltage
(3)
2.4 2.5 2.6 V
V
SS
Ground 0 0 0 V
V
IH
Input High Voltage
(Address, Control &
Data I/O Inputs)
(3)
1.7
____
V
DDQ
+ 100mV
(2)
V
V
IH
Input High Voltage
_
JTAG
1.7
____
V
DD
+ 100mV
(2)
V
V
IH
Input High Voltage -
ZZ, OPT, M/S
V
DD
- 0.2V
____
V
DD
+ 100mV
(2)
V
V
IL
Input Low Voltage -0.3
(1)
____
0.7 V
V
IL
Input Low Voltage -
ZZ, OPT, M/S
-0.3
(1)
____
0.2 V
5670 tbl 05
NOTES:
1. These parameters are determined by device characterization, but are not
production tested.
2. 3dV references the interpolated capacitance when the input and output switch
from 0V to 3V or from 3V to 0V.
3. C
OUT also references CI/O.
Capacitance
(1)
(TA = +25°C, F = 1.0MHZ) TQFP ONLY
Symbol Parameter Conditions
(2)
Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 8 pF
C
OUT
(3)
Output Capacitance V
OUT
= 3dV 10.5 pF
5670 tbl 08
Recommended DC Operating
Conditions with V
DDQ at 3.3V
NOTES:
1. V
IL (min.) = -1.0V for pulse width less than tRC/2 or 5ns, whichever is less.
2. V
IH (max.) = VDDQ + 1.0V for pulse width less than tRC/2 or 5ns, whichever is
less.
3. To select operation at 3.3V levels on the I/Os and controls of a given port, the
OPT pin for that port must be set to V
DD (2.5V), and VDDQX for that port must be
supplied as indicated above.
Symbol Parameter Min. Typ. Max. Unit
V
DD
Core Supply Voltage 2.4 2.5 2.6 V
V
DDQ
I/O Supply Voltage
(3)
3.15 3.3 3.45 V
V
SS
Ground 0 0 0 V
V
IH
Input Hig h Voltage
(Address, Control
&Data I/O Inputs)
(3)
2.0
____
V
DDQ
+ 150mV
(2)
V
V
IH
Input Hig h Voltage
_
JTAG
1.7
____
V
DD
+ 100mV
(2)
V
V
IH
Input High Voltage -
ZZ, OPT, M/S
V
DD
- 0.2V
____
V
DD
+ 100mV
(2)
V
V
IL
Input Low Voltage -0.3
(1)
____
0.8 V
V
IL
Input Low Voltage -
ZZ, OPT, M/S
-0.3
(1)
____
0.2 V
5670 tbl 06
