LPC2364_65_66_67_68 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7.1 — 16 October 2013 49 of 69
NXP Semiconductors
LPC2364/65/66/67/68
Single-chip 16-bit/32-bit microcontrollers
11.1 Internal oscillators
[1] Parameters are valid over operating temperature range unless otherwise specified.
[2] Typical ratings are not guaranteed. The values listed are at room temperature (25 C), nominal supply voltages.
11.2 I/O pins
[1] Applies to standard I/O pins and RESET pin.
11.3 USB interface
[1] Characterized but not implemented as production test. Guaranteed by design.
Table 10. Dynamic characteristic: internal oscillators
T
amb
=
40
C to +85
C; 3.0 V
V
DD(3V3)
3.6 V.
[1]
Symbol Parameter Conditions Min Typ
[2]
Max Unit
f
osc(RC)
internal RC oscillator frequency - 3.96 4.02 4.04 MHz
f
i(RTC)
RTC input frequency - - 32.768 - kHz
Table 11. Dynamic characteristic: I/O pins
[1]
T
amb
=
40
C to +85
C; V
DD(3V3)
over specified ranges.
Symbol Parameter Conditions Min Typ Max Unit
t
r
rise time pin configured as output 3.0 - 5.0 ns
t
f
fall time pin configured as output 2.5 - 5.0 ns
Table 12. Dynamic characteristics of USB pins (full-speed) (LPC2364/66/68 only)
C
L
= 50 pF; R
pu
= 1.5 k
on D+ to V
DD(3V3)
, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
t
r
rise time 10 % to 90 % 8.5 - 13.8 ns
t
f
fall time 10 % to 90 % 7.7 - 13.7 ns
t
FRFM
differential rise and fall time
matching
t
r
/t
f
--109%
V
CRS
output signal crossover voltage 1.3 - 2.0 V
t
FEOPT
source SE0 interval of EOP see Figure 14 160 - 175 ns
t
FDEOP
source jitter for differential transition
to SE0 transition
see Figure 14 2-+5ns
t
JR1
receiver jitter to next transition 18.5 - +18.5 ns
t
JR2
receiver jitter for paired transitions 10 % to 90 % 9-+9ns
t
EOPR1
EOP width at receiver must reject as
EOP; see
Figure 14
[1]
40 --ns
t
EOPR2
EOP width at receiver must accept as
EOP; see
Figure 14
[1]
82 --ns
LPC2364_65_66_67_68 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7.1 — 16 October 2013 50 of 69
NXP Semiconductors
LPC2364/65/66/67/68
Single-chip 16-bit/32-bit microcontrollers
11.4 Flash memory
[1] Number of program/erase cycles.
[2] Programming times are given for writing 256 bytes from RAM to the flash. Data must be written to the flash in blocks of 256 bytes.
Table 13. Dynamic characteristics of flash
T
amb
=
40
C to +85
C for standard devices,
40
C to +125
C for LPC2364HBD only, unless otherwise specified;
V
DD(3V3)
= 3.0 V to 3.6 V; all voltages are measured with respect to ground.
Symbol Parameter Conditions Min Typ Max Unit
N
endu
endurance
[1]
10000 100000 - cycles
t
ret
retention time powered; 100 cycles 10 - - years
unpowered; 100 cycles 20 - - years
t
er
erase time sector or multiple
consecutive sectors
95 100 105 ms
t
prog
programming time
[2]
0.95 1 1.05 ms
LPC2364_65_66_67_68 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 7.1 — 16 October 2013 51 of 69
NXP Semiconductors
LPC2364/65/66/67/68
Single-chip 16-bit/32-bit microcontrollers
11.5 Timing
Fig 14. Differential data-to-EOP transition skew and EOP width
002aab561
T
PERIOD
differential
data lines
crossover point
source EOP width: t
FEOPT
receiver EOP width: t
EOPR1
, t
EOPR2
crossover point
extended
differential data to
SE0/EOP skew
n × T
PERIOD
+ t
FDEOP
Fig 15. MISO line set-up time in SSP Master mode
t
su(SPI_MISO)
SCK
shifting edges
MOSI
MISO
002aad326
sampling edges

LPC2368FET100,518

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
ARM Microcontrollers - MCU 16/32 bit micro
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