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8N4SV75AC-0133CDI8

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
IDT8N4SV75 Data Sheet LVDS FREQUENCY PROGRAMMABLE VCXO
IDT8N4SV75CCD
REVISION B NOVEMBER 6, 2013
4 ©2013 Integrated Device Technology, Inc.
Absolute Maximum Ratings
NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device.
These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond
those listed in the DC Cha
racteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect product reliability.
Supply Voltage, V
DD
3.63V
Inputs, V
I
-0.5V to V
DD
+ 0.5V
Outputs, I
O
(LVDS)
Continuous Current
Surge Current
10mA
15mA
Package Thermal Impedance,
JA
49.4C/W (0 mps)
Storage Temperature, T
STG
-65C to 150C
DC Electrical Characteristics
Table 4A. Power Supply DC Characteristics, V
DD
=
3.3V ± 5%, T
A
= -40°C to 85°C
Table 4B. Power Supply DC Characteristics, V
DD
=
2.5V ± 5%, T
A
= -40°C to 85°C
Table 4C. LVCMOS/LVTTL DC Characteristic, V
DD
= 3.3V ± 5% or 2.5V ± 5%, T
A
= -40°C to 85°C
Item Rating
Symbol Parameter Test Conditions
Minimum Typical Maximum Units
V
DD
Power Supply Voltage 3.135 3.3 3.465 V
I
DD
Power Supply Current 140 175 mA
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
DD
Power Supply Voltage 2.375 2.5 2.625 V
I
DD
Power Supply Current 136 170 mA
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
IH
Input High Voltage
V
DD
= 3.3V 2 V
DD
+ 0.3 V
V
DD
= 2.5V 1.7 V
DD
+ 0.3 V
V
IL
Input Low Voltage
V
DD
= 3.3V -0.3 0.8 V
V
DD
= 2.5V -0.3 0.7 V
I
IH
Input High Current OE V
DD
= V
IN
= 3.465V or 2.625V 5 µA
I
IL
Input Low Current OE V
DD
= 3.465V or 2.625V, V
IN
= 0V -150 µA
IDT8N4SV75 Data Sheet LVDS FREQUENCY PROGRAMMABLE VCXO
IDT8N4SV75CCD
REVISION B NOVEMBER 6, 2013
5 ©2013 Integrated Device Technology, Inc.
Table 4D. LVDS DC Characteristics, V
DD
=
3.3V ± 5%, T
A
= -40°C to 85°C
Table 4E. LVDS DC Characteristics, V
DD
=
2.5V ± 5%, T
A
= -40°C to 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
OD
Differential Output Voltage 247 330 454 mV
V
OD
V
OD
Magnitude Change 50 mV
V
OS
Offset Voltage 1.14 1.23 1.31 V
V
OS
V
OS
Magnitude Change 50 mV
Symbol Parameter Test Conditions Minimum Typical Maximum Units
V
OD
Differential Output Voltage 247 320 454 mV
V
OD
V
OD
Magnitude Change 50 mV
V
OS
Offset Voltage 1.13 1.22 1.30 V
V
OS
V
OS
Magnitude Change 50 mV
IDT8N4SV75 Data Sheet LVDS FREQUENCY PROGRAMMABLE VCXO
IDT8N4SV75CCD
REVISION B NOVEMBER 6, 2013
6 ©2013 Integrated Device Technology, Inc.
AC Electrical Characteristics
NOTES are on next page.
Table 5A. AC Characteristics, V
DD
=
3.3V ± 5% or 2.5V ± 5%, T
A
= -40°C to 85°C
Symbol Parameter Test Conditions Minimum Typical Maximum Units
f
OUT
Output Frequency Q, nQ
15.476 866.67 MHz
975 1,300 MHz
f
I
Initial Accuracy Measured @ 25°C, V
C
= V
DD
/2 ±10 ppm
f
S
Temperature Stability
Option code = A or B ±100 ppm
Option code = E or F ±50 ppm
Option code = K or L ±20 ppm
f
A
Aging
Frequency drift over 10 year life ±3 ppm
Frequency drift over 15 year life ±5 ppm
f
T
Total Stability
Option code A, B (10 year life) ±113 ppm
Option code E, F (10 year life) ±63 ppm
Option code K, L (10 year life) ±33 ppm
tjit(cc) Cycle-to-Cycle Jitter; NOTE 1 6 14 ps
tjit(per) Period Jitter; NOTE 1 4 6 ps
tjit(Ø)
RMS Phase Jitter (Random);
NOTE 2, 3
156.25MHz, Integration Range:
12kHz - 20MHz
0.53 0.73 ps
tjit(Ø)
RMS Phase Jitter (Random);
NOTE 2, 3
f
XTAL
= 114.285MHz
500MHz <f
out
1300MHz 0.46 0.67 ps
100MHz <f
out
500MHz 0.48 0.63 ps
15MHz f
out
100MHz 0.76 1.4 ps
N
(100)
Single-side band phase noise,
100Hz from Carrier
156.25MHz -67 dBc/Hz
N
(1k)
Single-side band phase noise,
1kHz from Carrier
156.25MHz -89 dBc/Hz
N
(10k)
Single-side band phase noise,
10kHz from Carrier
156.25MHz -113 dBc/Hz
N
(100k)
Single-side band phase noise,
100kHz from Carrier
156.25MHz -118 dBc/Hz
N
(1M)
Single-side band phase noise,
1MHz from Carrier
156.25MHz -127 dBc/Hz
N
(10M)
Single-side band phase noise,
10MHz from Carrier
156.25MHz -137 dBc/Hz
PSNR Power Supply Noise Rejection
50mV Sinusoidal Noise
1kHz - 50MHz
-58.7 dbc
t
R
/ t
F
Output Rise/Fall Time 20% to 80% 80 500 ps
odc Output Duty Cycle 45 55 %
t
STARTUP
Device Startup Time after
Power-up
15 ms
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8N4SV75AC-0133CDI8

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Programmable Oscillators PROGRAMMABLE FEMTOCLOCK
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