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applicaTions inForMaTion
Wideband Differential IF Output
Wide IF bandwidth and high input 1dB compression are
obtained by reducing the IF output resistance with resistors
R1 and R2. This will reduce the mixer’s conversion gain,
but will not degrade the IIP3 or noise figure.
The IF matching shown in Figure 12 uses 249Ω resistors
and 470nH supply chokes to produce a wideband 200Ω
differential output. This differential output is suitable for
driving a wideband differential amplifier, filter, or a wide-
band 4:1 transformer.
The complete test circuit, shown in Figure 13, uses re-
sistive impedance matching attenuators (L-pads) on the
evaluation board to transform each 100Ω IF output to
50Ω. An external 0°/180° power combiner is then used to
convert the 100Ω differential output to 50Ω single-ended,
to facilitate measurement.
Measured conversion gain and IIP3 at the 200Ω differential
output are plotted in Figure14. As shown, the conversion
gain is flat within 1dB over the 50MHz to 490MHz IF output
frequency range.
Figure 12. Wideband 200Ω Differential Output
IF
LTC5551
5551 F12
270pF
270pF
249Ω
249Ω
470nH
470nH
V
CC
IF
+
100Ω
200Ω
LOAD
100Ω
IF
OUT
50Ω
IF
OUT
200Ω
IF
+
50Ω
IF
50Ω
RF
EN
EN
7.5nH
22pF
249Ω
249Ω
LO
1.8GHz
0dBm
3.3V
10nF
V
CC
IF
+
LTC5551
IF
2.2pF
RF
1.85GHz
TO
2.29GHz
270pF
1MHz TO 500MHz
COMBINER
L-PADS AND 180° COMBINER
FOR 50Ω SINGLE-ENDED MEASUREMENT
270pF
BIAS
IF
5551 F13
3.9pF
LO
LO
0.56µF
71.5Ω
69.8Ω
71.5Ω
69.8Ω
470nH
470nH
OUT
180°
Figure 13. Test Circuit for Wideband 200Ω Differential Output
Figure 14. Conversion Gain and IIP3 vs IF Output
Frequency for Wideband 200Ω Differential IF
IF FREQUENCY (MHz)
50
18
20
IIP3 (dBm)
22
38
90 130
5551 F14
36
24
26
28
30
34
32
0
1
G
C
(dB)
2
5
3
4
490170 210 250 290 330 370 410 450
IIP3
G
C
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The IFBIAS pin (Pin 16) is available for reducing the DC
current consumption of the IF amplifier, at the expense of
reduced performance. This pin should be left open-circuited
for optimum performance. The internal bias circuit pro
-
duces a 4
mA reference for the IF amplifier, which causes
the amplifier to draw approximately 134mA. If resistor R3
is connected to Pin 16 as shown in Figure 7, a portion of
the reference current can be shunted to ground, resulting
in reduced IF amplifier current. For example, R3 = 1will
shunt away 1.5mA from Pin 16 and the IF amplifier cur
-
rent will be reduced to approximately 90mA. The nominal,
open-circuit DC voltage at Pin 16 is 2.1V. Table 5 lists RF
performance at 1950MHz vs IF amplifier current.
Table 5. Mixer Performance with Reduced IF Amplifier Current
(RF = 1950MHz, Low Side LO, IF = 153MHz, V
CC
= 3.3V)
R3
(kΩ)
I
CC
(mA)
G
C
(dB)
IIP3
(dBm)
P1dB
(dBm)
NF
(dB)
OPEN 204 2.4 35.5 18.0 9.7
4.7 194 2.4 35.0 17.9 9.4
2.2 186 2.4 34.2 17.8 9.2
1.0 164 2.4 31.9 17.3 8.7
(RF = 1950MHz, High Side LO, IF = 153MHz, V
CC
= 3.3V)
R3
(kΩ)
I
CCIF
(mA)
G
C
(dB)
IIP3
(dBm)
P1dB
(dBm)
NF
(dB)
OPEN 204 2.4 33.0 17.9 10.5
4.7 194 2.3 32.6 17.8 10.2
2.2 186 2.3 32.1 17.6 9.9
1.0 164 2.3 30.5 17.0 9.4
Low Power Mode
The LTC5551 can be set to low power mode using a digital
voltage applied to the ISEL pin (Pin 8). This allows the
flexibility to reduce current when lower RF performance is
acceptable. Figure 15 shows a simplified schematic of the
ISEL pin interface. When ISEL is set low (<0.3V), the mixer
operates at maximum DC current. When ISEL is set high
(>1.2V), the DC current is reduced, thus reducing power
consumption. When floating, the ISEL is pulled low by
an internal pull-down resistor, and operates at maximum
supply current. The performance in low power mode and
nominal power mode are compared in Table 6.
Table 6. Performance Comparison – Low Power vs High Power
Mode RF = 1950MHz, Low Side LO, IF = 153MHz, EN = High
ISEL
I
CC
(mA)
G
C
(dB)
IIP3
(dBm)
P1dB
(dBm)
NF
(dB)
Low
204 2.4 35.5 18.0 9.7
High 139 2.4 29.3 16.7 8.3
Enable Interface
Figure 16 shows a simplified schematic of the EN pin in-
terface. To enable
the chip, the EN voltage must be higher
than 1.2V. The EN voltage at the pin should never exceed
the power supply voltage (V
CC
) by more than 0.3V. If this
should occur, the supply current could be sourced through
the ESD diode, potentially damaging the IC.
If the EN pin is left floating, its voltage will be pulled low by
the internal pull-down resistor and the chip will be disabled.
Figure 16. Enable Input Circuit
Figure 15. ISEL Interface Schematic
LTC5551
8
ISEL
V
CC
5551 F15
7
BIAS
LTC5551
5
EN
V
CC
5551 F16
6
BIAS
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Temperature Diode
The LTC5551 provides an on-chip diode at Pin 12 (TEMP)
for chip temperature measurement. Pin 12 is connected to
the anode of an internal ESD diode with its cathode con
-
nected to internal ground. The chip temperature can be
measured
by injecting a constant DC current into Pin 12
and measuring its DC voltage. The voltage vs temperature
coefficient of the diode is about –1.72mV/°C with 10µA
current injected into the TEMP pin. Figure 17 shows a
typical temperature-voltage behavior when 10µA and 80µA
currents are injected into Pin 12.
Supply Voltage Ramping
Fast ramping of the supply voltage can cause a current
glitch in the internal ESD protection circuits. Depending on
the supply inductance, this could result in a supply volt
-
age transient that exceeds the maximum rating. A supply
voltage ramp time of greater than 1ms is recommended.
Spurious Output Levels
Mixer spurious output levels versus harmonics of the
RF and LO are tabulated in Table 7. The spur levels were
measured on a standard evaluation board using the test
circuit shown in Figure 1. The spur frequencies can be
calculated using the following equation:
f
SPUR
= (Mf
RF
)–(Nf
LO
)
Table 7. IF Output Spur Levels (dBc)
RF = 1950MHz, P
RF
= 0dBm, P
LO
= 0dBm, IF = 153MHz, Low Side LO,
V
CC
= 3.3V, EN = High, ISEL = Low, T
C
= 25°C
N
M
0 1 2 3 4 5 6 7 8 9
0 –26 –36 –40 –40 –61 –70 –57 –60 *
1 –28 0 –43 –26 –60 –43 –64 –49 –62 –63
2 –83 –66 –70 –69 –83 * * –81 * –79
3 * –81 * *
* * * * * *
4 * * * * * * * * * *
5 * * * * * * * * * *
6 –84 * * * * * * * * *
7 –82 * * –84 * * * * * *
*Less than –85dBc
Figure 17. TEMP Diode Voltage vs Junction Temperature (T
J
)
TEMPERATURE (°C)
–40
400
450
TEMPERATURE DIODE VOLTAGE (mV)
500
900
–20 0
5551 F17
850
550
600
650
700
800
750
20 40 60 80 100
10µA
80µA

LTC5551IUF#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Mixer 300MHz - 3.5GHz Ultra-High Dynamic Range Downconverting Mixer
Lifecycle:
New from this manufacturer.
Delivery:
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