LTC5551
4
5551fa
For more information www.linear.com/LTC5551
Dc elecTrical characTerisTics
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
C
= 25°C. V
CC
= 3.3V, EN = High, ISEL = Low, unless otherwise noted. Test circuit
shown in Figure 1. (Note 2)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Power Supply Requirements
Supply Voltage (V
CC
)
l
2.5 3.3 3.6 VDC
Supply Current (ISEL = Low) EN = High, No LO Applied
EN = High, with LO Applied
EN = Low
148
204
234
100
mA
mA
µA
Supply Current – Low Power Mode (ISEL = High)
EN = High, No LO Applied
EN = High, with LO Applied
EN = Low
128
142
100
mA
mA
µA
Enable Logic Input (EN)
Input High V
oltage (On)
l
1.2 VDC
Input Low Voltage (Off)
l
0.3 VDC
Input Current 0.3V to V
CC
+ 0.3V –30 100 µA
Turn On Time LO Applied 0.4 µs
Turn Off Time LO Applied 0.5 µs
Power Select Logic Input (ISEL)
Input High Voltage (Low Power Mode)
l
1.2 VDC
Input Low Voltage (High Power Mode)
l
0.3 VDC
Input Current 0.3V to V
CC
+ 0.3V –30 100 µA
Temperature Sensing Diode (TEMP)
DC Voltage at T
J
= 25°C I
IN
= 10µA
I
IN
= 80µA
726
783
mV
mV
Voltage Temperature Coefficient I
IN
= 10µA
I
IN
= 80µA
l
l
–1.72
–1.53
mV/°C
mV/°C
Low Power Mode, 0.3GHz to 3.5GHz Downmixer Application: IF = 153MHz, ISEL = High (Notes 2, 3)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Power Conversion Gain RF = 400MHz, High Side LO
RF = 850MHz, High Side LO
RF = 1950MHz, Low Side LO
RF = 2700MHz, Low Side LO
3.0
2.7
2.4
1.7
dB
dB
dB
dB
Input 3
rd
Order Intercept RF = 400MHz, High Side LO
RF = 850MHz, High Side LO
RF = 1950MHz, Low Side LO
RF = 2700MHz, Low Side LO
27.3
28.0
29.3
29.7
dBm
dBm
dBm
dBm
SSB Noise Figure RF = 400MHz, High Side LO
RF = 850MHz, High Side LO
RF = 1950MHz, Low Side LO
RF = 2700MHz, Low Side LO
9.8
8.2
8.3
9.2
dB
dB
dB
dB
Input 1dB Compression RF = 400MHz, High Side LO
RF = 850MHz, High Side LO
RF = 1950MHz, Low Side LO
RF = 2700MHz, Low Side LO
14.8
16.2
16.7
17.7
dBm
dBm
dBm
dBm
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
CC
= 3.3V, EN = High, P
LO
= 0dBm, P
RF
= 0dBm (0dBm/tone for 2-tone
tests), unless otherwise noted. Test circuit shown in Figure 1. (Notes 2, 3)
ac elecTrical characTerisTics
LTC5551
5
5551fa
For more information www.linear.com/LTC5551
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC5551 is guaranteed functional over the –40°C to 105°C
case temperature range.
Note 3: SSB Noise Figure measurements performed with a small-signal
noise source, bandpass filter and 6dB matching pad on RF input, bandpass
filter and 6dB matching pad on the LO input, bandpass filter on the IF
output and no other RF signals applied.
Typical Dc perForMance characTerisTics
EN = High, Test circuit shown in Figure 1.
Supply Current vs Supply Voltage,
LO = 1800MHz at 0dBm
Supply Current vs Supply Voltage,
No LO Applied
elecTrical characTerisTics
Supply Current vs LO Frequency
(P
LO
= 0dBm)
CASE TEMPERATURE (°C)
–40
0
I
CC
(mA)
50
150
200
250
–15
5551 G01
100
110
10
35
60 85
ISEL = LOW
ISEL = HIGH
V
CC
= 3.5V
V
CC
= 3.3V
V
CC
= 3.1V
CASE TEMPERATURE (°C)
–40
0
I
CC
(mA)
20
140
160
180
–15
5551 G02
120
60
80
100
40
110
10
35
60 85
ISEL = LOW
ISEL = HIGH
V
CC
= 3.5V
V
CC
= 3.3V
V
CC
= 3.1V
LO FREQUENCY (MHz)
300
0
I
CC
(mA)
50
250
700
5551 G03
150
200
100
3500
1100
1500 1900
2300 2700
3100
ISEL = HIGH
T
C
= 105°C
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
ISEL = LOW
Supply Current vs V
CC
LO = 1800MHz at 0dBm
V
CC
(V)
2.5
100
I
CC
(mA)
130
220
2.6
5551 G04
190
160
3.62.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5
T
C
= 105°C
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
V
CC
(V)
2.5
100
I
CC
(mA)
130
220
2.6
5551 G05
190
160
3.63.52.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4
LO = 6dBm
LO = 0dBm
LO = –6dBm
Supply Current vs V
CC
LO = 1800MHz at T
C
= 25°C
LTC5551
6
5551fa
For more information www.linear.com/LTC5551
1100MHz to 2700MHz application.
V
CC
= 3.3V, EN = High, ISEL = Low, T
C
= 25°C, P
LO
= 0dBm, P
RF
= 0dBm (0dBm/tone for two-tone IIP3 tests, f = 2MHz), IF = 153MHz,
unless otherwise noted. Test circuit shown in Figure 1.
Conversion Gain, IIP3 and NF
vs RF Frequency (High Side LO)
1950MHz Conversion Gain, IIP3
and NF vs LO Power (High Side LO)
Typical ac perForMance characTerisTics
2550MHz Conversion Gain, IIP3
and NF vs LO Power (High Side LO)
RF Isolation vs Frequency LO Leakage vs LO Frequency
Conversion Gain, IIP3 and NF
vs RF Frequency (Low Side LO)
1950MHz Conversion Gain, IIP3
and NF vs LO Power (Low Side LO)
2550MHz Conversion Gain, IIP3
and NF vs LO Power (Low Side LO)
Input P1dB vs RF Frequency
(Low Side LO)
RF FREQUENCY (GHz)
1.1
0
IIP3 (dBm), NF (dB), G
C
(dB)
3
39
1.3
5551 G06
36
30
33
27
24
21
18
15
12
9
6
2.71.5 1.7 1.9 2.1 2.3 2.5
G
C
IIP3
NF
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
LO INPUT POWER (dBm)
–6
0
IIP3 (dBm), NF (dB), G
C
(dB)
36
–4
5551 G07
32
24
28
20
16
12
8
4
6–2 0 2 4
IIP3
G
C
NF
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
LO INPUT POWER (dBm)
–6
0
IIP3 (dBm), NF (dB), G
C
(dB)
40
36
–4
5551 G08
32
24
28
20
16
12
8
4
6–2 0 2 4
IIP3
G
C
NF
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
RF FREQUENCY (GHz)
1.1
0
IIP3 (dBm), NF (dB), G
C
(dB)
3
36
1.3
5551 G09
30
33
27
24
21
18
15
12
9
6
2.71.5 1.7 1.9 2.1 2.3 2.5
G
C
NF
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
IIP3
LO INPUT POWER (dBm)
–6
0
IIP3 (dBm), NF (dB), G
C
(dB)
36
–4
28
32
24
20
16
12
8
4
6–2 0 2 4
NF
G
C
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
IIP3
LO INPUT POWER (dBm)
–6
0
IIP3 (dBm), NF (dB), G
C
(dB)
36
–4
28
32
24
20
16
12
8
4
6–2 0 2 4
IIP3
G
C
NF
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
RF FREQUENCY (GHz)
1.1
10
INPUT P1dB (dBm)
13
20
5551 G12
19
18
17
16
15
14
11
12
2.71.3 1.5 1.7 1.9 2.1 2.3 2.5
T
C
= 105°C
T
C
= 85°C
T
C
= 25°C
T
C
= –40°C
RF FREQUENCY (GHz)
1.1
20
ISOLATION (dB)
50
70
5551 G13
60
30
40
2.71.3 1.5 1.7 1.9 2.1 2.3 2.5
RF-LO
RF-IF
LO FREQUENCY (GHz)
1.1
–60
LO LEAKAGE (dBm)
–30
0
5551 G14
–20
–10
–50
–40
2.71.3 1.5 1.7 1.9 2.1 2.3 2.5
LO-RF
LO-IF

LTC5551IUF#PBF

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
RF Mixer 300MHz - 3.5GHz Ultra-High Dynamic Range Downconverting Mixer
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet