Features
• Single Voltage Operation Read/Write: 2.65V - 3.6V
• 2.7V - 3.6V Read/Write
• Access Time – 70 ns
• Sector Erase Architecture
– One Hundred Twenty-seven 32K Word Main Sectors with Individual Write Lockout
– Eight 4K Word Sectors with Individual Write Lockout
• Fast Word Program Time – 10 µs
• Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms
• Suspend/Resume Feature for Erase and Program
– Supports Reading and Programming Data from Any Sector by Suspending Erase
of a Different Sector
– Supports Reading Any Word by Suspending Programming of Any Other Word
• Low-power Operation
– 10 mA Active
– 15 µA Standby
• Data Polling and Toggle Bit for End of Program Detection
• VPP Pin for Write Protection and Accelerated Program Operations
• RESET Input for Device Initialization
• Sector Lockdown Support
• TSOP Package
• Top or Bottom Boot Block Configuration Available
• 128-bit Protection Register
• Common Flash Interface (CFI)
• Green (Pb/Halide-free) Packaging
1. Description
The AT49BV642D(T) is a 2.7-volt 64-megabit Flash memory organized as 4,194,304
words of 16 bits each. The memory is divided into 135 sectors for erase operations.
The device can be read or reprogrammed off a single 2.7V power supply, making it
ideally suited for in-system programming.
To increase the flexibility of the device, it contains an Erase Suspend and Program
Suspend feature. This feature will put the erase or program on hold for any amount of
time and let the user read data from or program data to any of the remaining sectors.
The end of program or erase is detected by Data Polling or toggle bit.
The VPP pin provides data protection and faster programming times. When the V
PP
input is below 0.4V, the program and erase functions are inhibited. When V
PP
is at
1.65V or above, normal program and erase operations can be performed. With V
PP
at
10.0V, the program (dual-word program command) operation is accelerated.
A six-word command (Enter Single Pulse Program Mode) to remove the requirement
of entering the three-word program sequence is offered to further improve program-
ming time. After entering the six-word code, only single pulses on the write control
lines are required for writing into the device. This mode (Single Pulse Word Program)
is exited by powering down the device, by taking the RESET pin to GND or by a high-
to-low transition on the V
PP
input. Erase, Erase Suspend/Resume, Program Sus-
pend/Resume and Read Reset commands will not work while in this mode; if entered
they will result in data being programmed into the device. It is not recommended that
the six-word code reside in the software of the final product but only exist in external
programming code.
64-megabit
(4M x 16)
3-volt Only
Flash Memory
AT49BV642D
AT49BV642DT
Not
Recommended
for New Design
3631A–FLASH–04/06
