24
3631A–FLASH–04/06
AT49BV642D(T)
29. Common Flash Interface Definition Table
Address Data Comments
10h 0051h “Q”
11h 0052h “R”
12h 0059h “Y”
13h 0002h
14h 0000h
15h 0041h
16h 0000h
17h 0000h
18h 0000h
19h 0000h
1Ah 0000h
1Bh 0027h VCC min write/erase
1Ch 0036h VCC max write/erase
1Dh 0090h VPP min voltage
1Eh 00A0h VPP max voltage
1Fh 0004h Typ word write – 10 µs
20h 0002h Typ dual-word program time–5µs
21h 0009h Typ sector erase – 500 ms
22h 0010h Typ chip erase – 64,300 ms
23h 0004h Max word write/typ time
24h 0004h Max dual-word program time/typ time
25h 0004h Max sector erase/typ sector erase
26h 0004h Max chip erase/ typ chip erase
27h 0017h Device size
28h 0001h x16 device
29h 0000h x16 device
2Ah 0002h Max number of bytes in multiple byte write = 4
2Bh 0000h Max number of bytes in multiple byte write = 4
2Ch 0002h 2 regions,x=2
2Dh 0007h 8K bytes, Y = 7
2Eh 0000h 8K bytes, Y = 7
2Fh 0020h 8K bytes,Z=32
30h 0000h 8K bytes,Z=32
31h 007Eh 64K bytes, Y = 126
32h 0000h 64K bytes, Y = 126
33h 0000h 64K bytes,Z=256
34h 0001h 64K bytes,Z=256