FEDS5412222B-02
LAPIS Semiconductor
MSM5412222B
4/16
BLOCK DIAGRAM
Clock
Oscillator
X
262,144 12
Memory
Array
Serial Read Register ( 12)
Read Line Buffer
Write Line Buffe
r
(
12
)
Serial Read Controller
RE
RSTR SRCK
Data-Out
Buffer ( 12)
D
OUT
( 12)
Read/Write
and Refresh
Controlle
r
Sub-Register ( 12)
Decode
r
OE
( 12)
71-Word
Sub-Register ( 12)
Serial Write Register ( 12)
71-Word
V
BB
Generator
WE
RSTW
SWCK
Data-In
Buffer ( 12)
D
IN
( 12)
IE
Serial Write Controller
FEDS5412222B-02
LAPIS Semiconductor
MSM5412222B
5/16
OPERATION
Write Operation
The write operation is controlled by three clocks, SWCK, RSTW, and WE. Write operation is accomplished by
cycling SWCK, and holding WE high after the write address pointer reset operation or RSTW.
Each write operation, which begins after RSTW, must contain at least 150 active write cycles, i.e. SWCK cycles
while WE is high. To transfer the last data to the DRAM array, which at that time is stored in the serial data
registers attached to the DRAM array, an RSTW operation is required after the last SWCK cycle.
Note that every write timing of MSM5412222B is delayed by one clock compared with read timings for easy
cascading without any interface delay devices.
Write Reset: RSTW
The first positive transition of SWCK after RSTW becomes high resets the write address counters to zero. RSTW
setup and hold times are referenced to the rising edge of SWCK. Because the write reset function is solely
controlled by the SWCK rising edge after the high level of RSTW, the states of WE and IE are ignored in the write
reset cycle.
Before RSTW may be brought high again for a further reset operation, it must be low for at least two SWCK
cycles.
Data Inputs: D
IN
0 to 11
Write Clock: SWCK
The SWCK latches the input data on chip when WE is high, and also increments the internal write address pointer.
Data-in setup time t
DS
, and hold time t
DH
are referenced to the rising edge of SWCK.
Write Enable: WE
WE is used for data write enable/disable control. WE high level enables the input, and WE low level disables the
input and holds the internal write address pointer. There are no WE disable time (low) and WE enable time (high)
restrictions, because the MSM5412222B is in fully static operation as long as the power is on. Note that WE setup
and hold times are referenced to the rising edge of SWCK.
Input Enable: IE
IE is used to enable/disable writing into memory. IE high level enables writing. The internal write address pointer
is always incremented by cycling SWCK regardless of the IE level. Note that IE setup and hold times are
referenced to the rising edge of SWCK.
FEDS5412222B-02
LAPIS Semiconductor
MSM5412222B
6/16
Read Operation
The read operation is controlled by three clocks, SRCK, RSTR, and RE. Read operation is accomplished by
cycling SRCK, and holding RE high after the read address pointer reset operation or RSTR.
Each read operation, which begins after RSTR, must contain at least 150 active read cycles, i.e. SRCK cycles while
RE is high.
Read Reset: RSTR
The first positive transition of SRCK after RSTR becomes high resets the read address counters to zero. RSTR
setup and hold times are referenced to the rising edge of SRCK. Because the read reset function is solely controlled
by the SRCK rising edge after the high level of RSTR, the states of RE and OE are ignored in the read reset cycle.
Before RSTR may be brought high again for a further reset operation, it must be low for at least *two SRCK
cycles.
Data Out: D
OUT
0 to 11
Read Clock: SRCK
Data is shifted out of the data registers. It is triggered by the rising edge of SRCK when RE is high during a read
operation. The SRCK input increments the internal read address pointer when RE is high.
The three-state output buffer provides direct TTL compatibility (no pullup resistor required). Data out is the same
polarity as data in. The output becomes valid after the access time interval t
AC
that begins with the rising edge of
SRCK. *There are no output valid time restriction on MSM5412222B.
Read Enable: RE
The function of RE is to gate of the SRCK clock for incrementing the read pointer. When RE is high before the
rising edge of SRCK, the read pointer is incremented. When RE is low, the read pointer is not incremented. RE
setup times (t
RENS
and t
RDSS
) and RE hold times (t
RENH
and t
RDSH
) are referenced to the rising edge of the SRCK
clock.
Output Enable: OE
OE is used to enable/disable the outputs. OE high level enables the outputs. The internal read address pointer is
always incremented by cycling SRCK regardless of the OE level. Note that OE setup and hold times are referenced
to the rising edge of SRCK.

MSM5412222B-25TK-MTL

Mfr. #:
Manufacturer:
Description:
FIFO Video Memory 5V, 3M, 40MHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet