PDF: 09005aef8492173b Micron Technology, Inc., reserves the right to change products or specifications without notice.
m39l0rx0x0x0U3.fm - Rev. D 9/13 EN
10 ©2011 Micron Technology, Inc. All rights reserved.
128Mb, 256Mb NOR Flash and 128Mb, 512Mb LPDDR MCP
Maximum Ratings
Maximum Ratings
Stressing the device above the ratings listed may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the operating sections of this specification is not implied. Expo-
sure to absolute maximum rating conditions for extended periods may affect device reli-
ability.
Table 2: AbSolute Maximum Ratings
Symbol Parameter
Value
UnitMin Max
T
A
Ambient operating temperature
–40 85 °C
T
BIAS
Temperature under bias
–40 85 °C
T
STG
Storage temperature
–55 125 °C
V
IO
Input or output voltage
–0.5 2.45 V
V
DDF
Flash memory supply voltage
–0.2 2.45 V
V
DDQF
Flash memory input/output supply voltage
–0.2 2.45 V
V
DDD
LPDDR supply voltage
–0.2 2.45 V
V
DDQD
LPDDR I/O supply voltage
–0.2 2.45 V
V
PPF
Flash memory program voltage
–0.2 10 V
I
O
Output short circuit current
100 mA
t
VPPH
Time for V
PPF
at V
PPH
100 hours
PDF: 09005aef8492173b Micron Technology, Inc., reserves the right to change products or specifications without notice.
m39l0rx0x0x0U3.fm - Rev. D 9/13 EN
11 ©2011 Micron Technology, Inc. All rights reserved.
128Mb, 256Mb NOR Flash and 128Mb, 512Mb LPDDR MCP
DC and AC Parameters
DC and AC Parameters
The parameters in the DC and AC characteristics tables that follow are derived from tests
performed under the measurement conditions summarized below. Designers must
check that the operating conditions in their circuit match the operating conditions when
relying on the quoted parameters.
Notes: 1. V
DDD
must be equal to V
DDQD
.
Figure 4: AC Measurement I/O Waveform
Notes: 1. V
DDQ
means either V
DDQF
or V
DDQD
.
Table 3: Operating and AC measurement conditions
Parameter
Flash Memory LPDDR
UnitMin Max Min Typ Max
V
DDF
supply voltage
1.7 1.95 V
V
DDD
supply voltage
1.7 1.8 1.95 V
V
DDQF
supply voltage
1.7 1.95 V
V
DDQD
1
supply voltage
1.7 1.8 1.95 V
V
PPF
supply voltage (factory environment)
8.5 9.5 V
V
PPF
supply voltage (application
environment)
–0.4 V
DDQF
+ 0.4 V
Load capacitance (C
L
)
30 30 pF
Output circuit resistors (R
1
, R
2
)
16.7 k
Input rise and fall times
52ns
Input low voltage (V
IL
)
00.2V
Input high voltage (V
IH
)
V
DDQ
1.6 V
I/O timing reference voltages
V
DDQF
/2 V
DDQD
/2 V
AI06161
V
DDQ
0V
V
DDQ
/2
PDF: 09005aef8492173b Micron Technology, Inc., reserves the right to change products or specifications without notice.
m39l0rx0x0x0U3.fm - Rev. D 9/13 EN
12 ©2011 Micron Technology, Inc. All rights reserved.
128Mb, 256Mb NOR Flash and 128Mb, 512Mb LPDDR MCP
DC and AC Parameters
Figure 5: AC Measurement Load Circuit
Notes: 1. V
DD
means either V
DDF
or V
DDD
. V
DDQ
means either V
DDQF
or V
DDQD
.
Notes: 1. Sampled only, not 100% tested.
2. Refer to the device data sheets for further DC and AC characteristics values and illustrations.
Table 4: Capacitance
1
Symbol Parameter Test condition Min Max Unit
C
IN
Input capacitance V
IN
= 0V 11 pF
C
OUT
Output capacitance V
OUT
= 0V 16 pF
AI06162
V
DDQ
C
L
C
L
includes JIG capacitance
16.7kW
DEVICE
UNDER
TEST
0.1µF
V
DD
0.1µF
V
DDQ
16.7kW

M39L0R8090U3ZE6F TR

Mfr. #:
Manufacturer:
Micron
Description:
IC FLASH RAM 256M PAR 133VFBGA
Lifecycle:
New from this manufacturer.
Delivery:
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