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IS61WV12816DBLL-10BLI

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
Integrated Silicon Solution, Inc. — www.issi.com
7
Rev. D
06/21/2011
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IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
OPERATING RANGE (VDD) (IS61WV12816DBLL)
(1)
Range Ambient Temperature VDD (8 nS)
1
VDD (10 nS)
1
Commercial 0°C to +70°C 3.3V + 5% 2.4V-3.6V
Industrial –40°C to +85°C 3.3V + 5% 2.4V-3.6V
Note:
1. When operated in the range of 2.4V-3.6V, the device meets 10ns. When operated in the
range of 3.3V
+ 5%, the device meets 8ns.
OPERATING RANGE (VDD) (IS64WV12816DBLL)
(2,3)
Range Ambient Temperature VDD (10 nS)
2
VDD (12 nS)
2
Automotive –40°C to +125°C 3.3V + 5% 2.4V-3.6V
Note:
2. When operated in the range of 2.4V-3.6V, the device meets 12ns. When operated in the range
of 3.3V
+ 5%, the device meets 10ns.
3. If the device is operated in the temperature range of -40
o
C to +85
o
C, the device meets 10ns.
HIGH SPEED (IS61WV12816DALL/DBLL)
OPERATING RANGE (VDD) (IS61WV12816DALL)
Range Ambient Temperature VDD Speed
Commercial 0°C to +70°C 1.65V-2.2V 20ns
Industrial –40°C to +85°C 1.65V-2.2V 20ns
Automotive –40°C to +125°C 1.65V-2.2V 20ns
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 -10 -12 -20
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC VDD Dynamic Operating VDD = Max., Com. — 65 — 60 — 55 — 40 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 70 — 65 — 55 — 45
CE = VIL Auto.
(3)
—— —75 — 60 —50
VIN ≥ VDD – 0.3V, or typ.
(2)
45 45
VIN ≤ 0.4V
ICC1 Operating VDD = Max., Com. — 2 — 2 — 2 — 2 mA
Supply Current IOUT = 0 mA, f = 0 Ind. — 2 — 2 — 2 — 2
CE = VIL Auto. — — — 2 — 2 — 2
VIN ≥ VDD – 0.3V, or
VIN ≤ 0.4V
ISB2 CMOS Standby VDD = Max., Com. — 50 — 50 — 50 — 50
μ
A
Current (CMOS Inputs) CE ≥ VDD – 0.2V, Ind. — 70 — 70 — 70 — 70
VIN ≥ VDD – 0.2V, or Auto. — — — 100 — 100 — 100
VIN ≤ 0.2V
, f = 0 typ.
(2)
4 4
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD = 3.0V, TA = 25
o
C and not 100% tested.
3. For Automotive grade at 15ns, typ. Icc = 38mA, not 100% tested.
8
Integrated Silicon Solution, Inc. — www.issi.com
Rev. D
06/21/2011
IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-25 -35 -45
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
ICC VDD Dynamic Operating VDD = Max., Com. — 20 — 20 — 18 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 25 — 25 — 20
CE = VIL Auto. — 40 — 35 — 30
VIN ≥ VDD – 0.3V, or typ.
(2)
18
VIN ≤ 0.4V
ICC1 Operating VDD = Max., Com. — 2 — 2 — 2 mA
Supply Current IOUT = 0 mA, f = 0 Ind. — 2 — 2 — 2
CE = VIL Auto. — 2 — 2 — 2
VIN ≥ VDD – 0.3V, or
VIN ≤ 0.4V
ISB2 CMOS Standby VDD = Max., Com. — 40 — 40 — 40
μ
A
Current (CMOS Inputs) CE ≥ VDD – 0.2V, Ind. — 50 — 50 — 50
VIN ≥ VDD – 0.2V, or Auto. — 75 — 75 — 75
VIN ≤ 0.2V
, f = 0 typ.
(2)
4
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD = 3.0V, TA = 25
o
C and not 100% tested.
OPERATING RANGE (VDD) (IS61WV12816DBLS)
Range Ambient Temperature VDD (35 nS)
Commercial 0°C to +70°C 2.4V-3.6V
Industrial –40°C to +85°C 2.4V-3.6V
LOW POWER (IS61WV12816DALS/DBLS)
OPERATING RANGE (VDD) (IS61WV12816DALS)
Range Ambient Temperature VDD Speed
Commercial 0°C to +70°C 1.65V-2.2V 45ns
Industrial –40°C to +85°C 1.65V-2.2V 45ns
Automotive –40°C to +125°C 1.65V-2.2V 55ns
OPERATING RANGE (VDD) (IS64WV12816DBLS)
Range Ambient Temperature VDD (35 nS)
Automotive –40°C to +125°C 2.4V-3.6V
Integrated Silicon Solution, Inc. — www.issi.com
9
Rev. D
06/21/2011
1
2
3
4
5
6
7
8
9
10
11
12
IS61WV12816DALL/DALS, IS61WV12816DBLL/DBLS,
IS64WV12816DBLL/DBLS
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-8 -10 -12
Symbol Parameter Min. Max. Min. Max. Min. Max. Unit
tRC Read Cycle Time 8 — 10 — 12 — ns
tAA Address Access Time — 8 — 10 — 12 ns
tOHA Output Hold Time 2.0 — 2.0 — 3 — ns
tACE CE Access Time — 8 — 10 — 12 ns
tDOE OE Access Time — 5.5 — 6.0 — 6.0 ns
tHZOE
(2)
OE to High-Z Output — 3 — 4 — 6 ns
tLZOE
(2)
OE to Low-Z Output 0 — 0 — 0 — ns
tHZCE
(2
CE to High-Z Output 0 3 0 4 0 6 ns
tLZCE
(2)
CE to Low-Z Output 3 — 3 — 3 — ns
tBA LB, UB Access Time — 5.5 — 6.5 — 6.5 ns
tHZB
(2)
LB, UB to High-Z Output 0 5.5 0 6.5 0 6.5 ns
tLZB
(2)
LB, UB to Low-Z Output 0 — 0 — 0 — ns
tPU Power Up Time 0 — 0 — 0 — ns
tPD Power Down Time — 8 — 10 — 10 ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0V to
3.0V and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

IS61WV12816DBLL-10BLI

Mfr. #:
Buy IS61WV12816DBLL-10BLI
Manufacturer:
ISSI
Description:
SRAM 2M (128Kx16) 10ns Async SRAM 3.3v
Lifecycle:
New from this manufacturer.
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