CY7C1051H
8-Mbit (512K Words × 16 Bit) Static RAM
with Error-Correcting Code (ECC)
Cypress Semiconductor Corporation • 198 Champion Court • San Jose, CA 95134-1709 • 408-943-2600
Document Number: 002-03314 Rev. *C Revised November 27, 2017
8-Mbit (512K Words × 16 Bit) Static RAM with Error-Correcting Code (ECC)
Features
■ High speed
❐ t
AA
= 10 ns
■ Embedded error-correcting code (ECC) for single-bit error
correction
■ Low active and standby currents
❐ I
CC
= 90-mA typical at 100 MHz
❐ I
SB2
= 20-mA typical
■ Operating voltage range: 2.2 V to 3.6 V.
■ 1.0-V data retention
■ Transistor-transistor logic (TTL) compatible inputs and outputs
■ Available in Pb-free 44-pin TSOP II package
Functional Description
CY7C1051H is a high-performance CMOS fast static RAM
device with embedded ECC
[1]
.
To access device, assert the chip enable (CE) input LOW. To
perform data writes, assert the Write Enable (WE) input LOW,
and provide the data and address on the device data pins (I/O
0
through I/O
15
) and address pins (A
0
through A
18
) respectively.
The Byte High Enable (BHE) and Byte Low Enable (BLE) inputs
control byte writes, and write data on the corresponding I/O lines
to the memory location specified. BHE
controls I/O
8
through
I/O
15
and BLE controls I/O
0
through I/O
7
.
To perform data reads, assert the Output Enable (OE
) input and
provide the required address on the address lines. Read data is
accessible on I/O lines (I/O
0
through I/O
15
). You can perform
byte accesses by asserting the required byte enable signal (BHE
or BLE) to read either the upper byte or the lower byte of data
from the specified address location.
All I/Os (I/O
0
through I/O
15
) are placed in a high-impedance state
when the device is deselected (CE HIGH), or control signals are
de-asserted (OE, BLE, BHE).
See the Truth Table on page 13 for a complete description of
read and write modes.
The logic block diagrams are provided on page 2.
The CY7C1051H is available in 44-pin TSOP II package.
For a complete list of related documentation, click here.
Product Portfolio
Product
Features and Options
(see Pin Configurations
on page 4)
Range
V
CC
Range
(V)
Speed
(ns)
Current Consumption
Operating I
CC
, (mA)
Standby, I
SB2
(mA)
f = f
max
Typ
[2]
Max Typ
[2]
Max
CY7C1051H30 Single chip enables Industrial 2.2 V–3.6 V 10 90 110 20 30
Notes
1. This device does not support automatic write-back on error detection.
2. Typical values are included only for reference and are not guaranteed or tested. Typical values are measured at V
CC
= 3 V (for a V
CC
range of 2.2 V–3.6 V) T
A
= 25 °C.
