Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 11
Rev. B
03/15/2013
IS62C25616BL, IS65C25616BL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter Test Condition Min. Max. Unit
Vdr Vdd for Data Retention See Data Retention Waveform 2.0 5.5 V
Idr Data Retention Current Vdd = 2.0V, CE ≥ Vdd – 0.2V Com. — 10
mA
VIn ≥ Vdd – 0.2V, or VIn
≤
Vss + 0.2V
Ind. — 15
Auto. — 35
typ.
(1)
2
tsdr Data Retention Setup Time See Data Retention Waveform 0 — ns
trdr Recovery Time See Data Retention Waveform trc — ns
Note:
1. Typical Values are measured at Vdd = 5V, Ta = 25
o
C and not 100% tested.
DATA RETENTION WAVEFORM (CE Controlled)
VDD
CE ≥ VDD
- 0.2V
t
SDR
t
RDR
V
DR
CE
GND
4.5V
Data Retention Mode
