Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 7
Rev. B
03/15/2013
IS62C25616BL, IS65C25616BL
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,3)
(Over Operating Range)
-45
Symbol Parameter Min. Max. Unit
twc Write Cycle Time 45 — ns
tsce CE to Write End 35 — ns
taw Address Setup Time 35 — ns
to Write End
tHa Address Hold from Write End 0 — ns
tsa Address Setup Time 0 — ns
tPwb LB, UB Valid to End of Write 35 — ns
tPwe1 WE Pulse Width (OE =High) 35 — ns
tPwe2 WE Pulse Width (OE=Low) 35 — ns
tsd Data Setup to Write End 25 — ns
tHd Data Hold from Write End 0 — ns
tHzwe
(2)
WE LOW to High-Z Output — 20 ns
tLzwe
(2)
WE HIGH to Low-Z Output 5 — ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
