Vishay Siliconix
SiP11203, SiP11204
Document Number: 73868
S11-0975–Rev. C, 16-May-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Product is End of Life 12/2014
Synchronous Rectifier Driver with Power Up/Down Control,
Output OVP, Error Amplifier and Precision Reference
FEATURES
High Current synchronous rectifier drivers
- 2.2 A source and 4 A sink
Driver switching synchronized with primary
controller
Full output control during power-up and
power-down
5.5 V to 13 V operating voltage range
1.225 V on board bandgap voltage reference
• Can be powered from the pulse transformer
supplying synchronous rectifier timing signals
On-chip ground-sensing error amplifier
Programmable rising edge delay
Output over-voltage protection (OVP)
- SiP11203 turns synchronous rectifiers on
- SiP11204 turns synchronous rectifiers off
Secondary-side companion chip for the Si9122
Half-Bridge Controller IC
APPLICATIONS
High efficiency DC-DC Converter Modules and
Bricks
Telecom and Server Power Supplies
High Efficiency Intermediate Bus Converters (IBC)
Half-bridge, full-bridge, or push-pull primary DC-DC
topologies
Center-tapped or current-doubler secondary
configurations
DESCRIPTION
The SiP11203/SiP11204 provide the secondary side
error amplifier, reference voltage and synchronous
rectifier drivers for isolated converter topologies. Both
ICs are capable of being powered via conventional
bias supplies (output inductor winding or power
transformer winding), or from a pulse transformer
supplying the gate timing signals, and both parts
generate a regulated supply for powering the error
amplifier and control circuitry.
During power-up the SiP11203/SiP11204 ensure that
the synchronous rectifiers are held off until the supply
voltages are adequate to guarantee effective
operation of the driver circuits. During the soft-start
interval, a gradual ramp-up of the synchronous
rectifier conduction time is provided. Both ICs also
allow control of the discharge rate of the synchronous
rectifier driver outputs during power-down.
The SiP11203 and SiP11204 are available in a
Pb-free MLP44-16 package and are rated to handle
the industrial ambient temperature range of - 40 to 85 °C.
TYPICAL APPLICATION CIRCUIT
OUT B
OUT A
Vin
IN A
IN B
OVPin
EA+
VLCpd RdelRpd
GND
Vref
EA-
EAout
PGND
Half Brid
g
e
SiP11203
SiP11204
V
IN
GND
V
OUT
GND
PWM
Controlle
r
Optoisolator
Pulse
Transformer
ZF1
ZF2
SRH
SRL
www.vishay.com
2
Document Number: 73868
S11-0975–Rev. C, 16-May-11
Vishay Siliconix
SiP11203, SiP11204
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes:
a. Device mounted with all leads soldered to printed circuit board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
ABSOLUTE MAXIMUM RATINGS
Parameter Limit
Unit
V
IN
, IN
A
,
IN
B
15
V
V
REF
, Linear Inputs
- 0.3 to V
L
+ 0.3
Storage Temperature
- 65 to + 160
°C
Junction Temperature
- 40 to + 125
Package Thermal Impedance (Rθ
JA
)
16 Pin 44MLP
47
°C/W
Package Power Dissipation (package)
a
745
mW
RECOMMENDED OPERATING RANGE
Parameter Limit
Unit
V
IN
5.5 to 13 V
C
VIN
1
µF
C
VL
1
C
REF
0.1
Linear Inputs (EA+, EA-, OVP
IN
) 0 to V
L
Error Amplifier Output Voltage 0 to 3.5
V
Logic Inputs (IN
A
, IN
B
)
0 to 13
Reference voltage output current 10 µA
R
PD
> 15 kΩ
C
PD
1 to 10
nF
SPECIFICATIONS
Parameter Symbol
Test Conditions
Unless Otherwise Specified
5.5 V V
IN
13 V
T
A
= - 40 °C to 85 °C
Limits
Unit Min.
a
Typ.
b
Max.
a
Power Supply
V
L
Output Voltage V
L
Output disabled (Note e)
4.75 5 5.25 V
V
L
Temperature Coefficient TC1
(Note c)
160 µV/°C
V
L
Line Regulation
V
L_LNR
I
L
= 0 mA
38
mV
V
L
Load Regulation
V
L_LDR
I
L
= 0 mA to 3.3 mA, V
IN
= 5.5 V
1.2 10
V
L
Supply PSRR
V
L_PSRR
f
TEST
=100 Hz, (Note c)
70 dB
Supply Current
I
IN
V
IN
= 5.5 V, C
LOAD(A)
= C
LOAD(B)
= 6 nF (Note c, d)
12
mA
V
IN
= 7.5 V, C
LOAD(A)
= C
LOAD(B)
= 6 nF (Note c, d)
15.5
Quiescent Current
I
Q
Device switching disabled (Note e)
3.5 4.5
Start-up Current Capability
I
STARTUP
Current sourced from V
IN
to V
L
, V
L
= 0 V
35 45 55
Reference Voltages
V
REF
Voltage V
REF
I
REF2
= 0 mA, T
A
= 25 °C
1.212 1.225 1.238
V
I
REF2
= 0 mA
1.188 1.225 1.262
V
REF
Temperature Coefficient
TC2
(Note c) 160 µV/°C
V
REF
Load Regulation
V
REF_LDR
V
IN
= 5.5 V, I
REF
= 0 to 10
µA
1.5 2.5 mV
V
REF
PSRR
V
REF_PSRR
f
TEST
= 100 Hz, (Note c)
60 dB
Internal Buffered Reference Voltage
V
REFINT
V
IN
= 5.5, measured at R
PD
pin
2.320 2.5 2.570 V
Document Number: 73868
S11-0975–Rev. C, 16-May-11
www.vishay.com
3
Vishay Siliconix
SiP11203, SiP11204
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Parameter Symbol
Test Conditions
Unless Otherwise Specified
5.5 V V
IN
13 V
T
A
= - 40 °C to 85 °C
Limits
Unit Min.
a
Typ.
b
Max.
a
Logic Inputs - IN A and IN B
Input High
V
IH
Rising 4 2.5
V
Input Low
V
IL
Falling 2.1 1
Input Resistance
R
IN
V
IN
= 13 V, 13 V at INA and/or INB
33.84.5kΩ
Input Frequency Range (INA and
INB)
f
IN
(Note c) 100 500 kHz
Error Amplifier - DC Electrical Characteristics
Voltage Gain
A
V
20 log (ΔV
OUT
/ΔV
OS
) for V
OUT
= 0.5 V to 3 V
65 70
dB
Common Mode Rejection Ratio CMRR
Input CMR = 0 V to 3.5 V
60 65
Input Offset Voltage
V
OS
V
CM
= 1.225 V, R
LOAD
= 10 kΩ to V
CM
± 3 ± 15 mV
V
OS
Temperature Coefficient
TC3
(Note c)
30 µV/°C
Input Bias Current
I
BIAS
V
CM
= 1.225 V
210
nA
Input Offset Current
I
OS
(I
EA+
) - (I
EA-
), (Note c)
± 0.3
Output Voltage
V
OL
Output sinking 0.8 mA
225 400 mV
V
OH
Output sourcing 0.8 mA
33.45 V
Output Current
I
OH
Sourcing, EA
OUT
= 1 V, EA+ overdrive = 500 mV
3.5 4.7
mA
I
OL
Sinking, EA
OUT
= 2.5 V, EA+ overdrive = 500 mV
0.8 1.3
Error Amplifier - AC Electrical Characteristics
Gain-Bandwidth Product BW (Note c) 1 MHz
Slew Rate
SR+
Rising, R
LOAD
= 2 kΩ II 1 nf to Ground
0.75
V/µs
SR-
Falling, R
LOAD
= 2 kΩ II 1 nf to Ground
1
MOSFET Drivers
Driver Impedance
R
D(SOURCE)
V
IN
= 5.5 V, I
OUT
= 100 mA, T
J
= 25 °C
2.3 3.7
Ω
R
D(SINK)
1.5 2.4
R
D(SOURCE)
V
IN
= 7.5 V, I
OUT
= 100 mA, T
J
= 25 °C
2.1 3.4
R
D(SINK)
1.4 2.2
Peak Drive Current
I
PK(SOURCE)
V
IN
= 5.5 V, T
J
= 25 °C (Note c)
1.2
A
I
PK(SINK)
2.4
I
PK(SOURCE)
V
IN
= 7.5 V, T
J
= 25 °C (Note c)
2.2
I
PK(SINK)
4
Rise Time
t
r
10 % to 90 %, V
IN
= 5.5 V, C
LOAD
= 6 nF, (Note c)
45
ns
10 % to 90 %, V
IN
= 7.5 V, C
LOAD
= 6 nF, (Note c)
42
Fall Time
t
f
90 % to 10 %, V
IN
= 5.5 V, C
LOAD
= 6 nF, (Note c)
35
90 % to 10 %, V
IN
= 7.5 V, C
LOAD
= 6 nF, (Note c)
32
IN to OUT Propagation Delay
t
pdr
INA/INB rising to OUTA/OUTB rising, 50 % to 50 %
V
IN
= 5.5 V, R
DEL
connected to V
L
, C
LOAD
= 0 nF
20 32 55
t
pdf
INA/INB falling to OUTA/OUTB falling, 50 % to 50 %
V
IN
= 5.5 V, R
DEL
connected to V
L
, C
LOAD
= 0 nF
20 34 55
Additional Rising Edge OUT A/B
Delay vs. R
DEL
Δt
DELAY
R
DEL
connected to V
L
0
R
DEL
= 25 kΩ to GND, C
LOAD
= 0 nF (Note d)
28 38 48
Power-down Detection Timeout
t
PDDET
IN A and IN B low to OUT A/OUT B low
R
PD
= 25 kΩ, C
PD
= 1 nF (Note c)
25 µs
Power-up Output Hold-off Current
I
HOFF
No forcing voltage on V
IN
or V
L
, both V
IN
and V
L
bypassed by 1 µF to GND, INA or INB = 5 V, other
input = 0 V, force 1 V at active output (A or B)
350 530 mA
SPECIFICATIONS

SIP11204DLP-T1-E3

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Switching Controllers Sec Sync Rect Ctrl w/Overvolt Protect
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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