This is information on a product in full production.
September 2013 DocID025077 Rev 2 1/22
VND5N07-E
OMNIFET II
fully autoprotected Power MOSFET
Datasheet
-
production data
Features
• Linear current limitation
• Thermal shutdown
• Short circuit protection
• Integrated clamp
• Low current drawn from input pin
• Diagnostic feedback through input pin
• ESD protection
• Direct access to the gate of the power mosfet
(analog driving)
• Compatible with standard Power MOSFET
Description
The VND5N07-E is a monolithic device designed
using STMicroelectronics
®
VIPower
®
M0
technology, intended for replacement of standard
Power MOSFETs from DC to 50 KHz
applications. Built-in thermal shutdown, linear
current limitation and overvoltage clamp protect
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Max. on-state resistance (per ch.) R
DS (on)
0.2Ω
Current limitation (typ) I
LIMH
5 A
Drain-Source clamp voltage V
CLAMP
70V
Table 1. Device summary
Package
Order codes
Tube Tape and reel
DPAK VND5N07-E VND5N07TR-E
IPAK VND5N07-1-E
www.st.com