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4
EQUIVALENT SCHEMATICS
Following figure gives the equivalent schematics of the user relevant inputs and outputs. The diagrams are simplified
representations of the circuits used.
IN
Rin
4K
IN
4K
TYPE 1: CLR input
TYPE 2: CLK , DI, CSB , NXT , DIR inputs
.
VDD
VDD
TYPE 3: VDD and VBB power supply inputs
VBB
VBB
OUT
TYPE 4: DO, ERRB and PORB/WD open drain outputs
SLA
Rout
TYPE 5: SLA analog output
Figure 3. In and Output Equivalent Diagrams
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PACKAGE THERMAL CHARACTERISTICS
The AMIS30543 is available in a NQFP32 package. For
cooling optimizations, the NQFP has an exposed thermal
pad which has to be soldered to the PCB ground plane. The
ground plane needs thermal vias to conduct the heat to the
bottom layer. Figure 4 gives an example for good power
distribution solutions.
For precise thermal cooling calculations the major
thermal resistances of the device are given in Table 5. The
thermal media to which the power of the devices has to be
given are:
Static environmental air (via the case)
PCB board copper area (via the exposed pad)
The major thermal resistances of the device are the Rth
from the junction to the ambient (Rthja) and the overall Rth
from the junction to exposed pad (Rthjp). In Table 4 below
one can find the values for the Rthja and Rthjp, simulated
according to JESD51.
The Rthja for 2S2P is simulated conform JEDEC
JESD51 as follows:
A 4layer printed circuit board with inner power planes
and outer (top and bottom) signal layers is used
Board thickness is 1.46 mm (FR4 PCB material)
The 2 signal layers: 70 mm thick copper with an area of
5500 mm
2
copper and 20% conductivity
The 2 power internal planes: 36 mm thick copper with
an area of 5500 mm
2
copper and 90% conductivity
The Rthja for 1S0P is simulated conform to JEDEC
JESD51 as follows:
A 1layer printed circuit board with only 1 layer
Board thickness is 1.46 mm (FR4 PCB material)
The layer has a thickness of 70 mm copper with an area
of 5500 mm
2
copper and 20% conductivity
NQFP32
Figure 4. Example of NQFP32 PCB Ground Plane Layout in Top View (Preferred Layout at Top and Bottom)
ELECTRICAL SPECIFICATION
Recommend Operation Conditions
Operating ranges define the limits for functional
operation and parametric characteristics of the device. Note
that the functionality of the chip outside these operating
ranges is not guaranteed. Operating outside the
recommended operating ranges for extended periods of time
may affect device reliability.
Table 3. OPERATING RANGES
Symbol Parameter Min Max Unit
V
BB
Analog DC Supply +6 +30 V
T
J
Junction Temperature (Note 5) 40 +172 °C
5. No more than 100 cumulative hours in life time above T
tw
.
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Table 4. DC PARAMETERS (The DC parameters are given for V
BB
and temperature in their operating ranges unless otherwise
specified) Convention: currents flowing in the circuit are defined as positive.
Symbol
Pin(s) Parameter Remark/Test Conditions Min Typ Max Unit
SUPPLY AND VOLTAGE REGULATORS
V
BB
V
BB
Nominal operating supply range 6 30 V
I
BB
Total internal current consumption
(Note 6)
Unloaded outputs 12 mA
V
DD
V
DD
Regulated Output Voltage I
LOAD
within limits 4.5 5 5.5 V
V
DD_SLP
Regulated Output Voltage in Sleep
Mode
1 mA I
LOAD
0 mA
V
BB
> 9 V
4 5.5 V
I
INT
Internal load current (Note 6) Unloaded outputs 8
mA
I
LOAD
Max Output Current
6 V v V
BB
< 8 V 15
8 V v V
BB
v 30 V 40
I
DDLIM
Current limitation Pin shorted to ground 200 mA
I
LOAD_SLP
Current Consumption when in
Sleep Mode
V
BB
> 9 V 230
mA
POWERONRESET (POR)
V
DDH
V
DD
Internal POR comparator threshold V
DD
rising 3.9 4.2 4.4 V
V
DDL
Internal POR comparator threshold V
DD
falling 3.86 V
V
DDHYS
Internal POR comparator
hysteresis
0.35 V
MOTORDRIVER
I
MDmax,Peak
MOTXP
MOTXN
MOTYP
MOTYN
Max current through motor coil in
normal operation
T
J
= 130°C 3000 mA
R
HS
Onresistance highside driver,
CUR[4:0] = 0...31 (Note 7)
0.15 0.4
W
T
J
= 160°C 0.45
W
R
LS3
Onresistance lowside driver,
CUR[4:0] = 16...25 (Note 7)
0.1 0.4
W
T
J
= 160°C 0.45
W
R
LS2
Onresistance lowside driver,
CUR[4:0] = 10...15 (Note 7)
0.2 0.7
W
T
J
= 160°C 0.8
W
R
LS1
Onresistance lowside driver,
CUR[4:0] = 3...9 (Note 7)
0.4 1.1
W
T
J
= 160°C 1.25
W
R
LS0
Onresistance lowside driver,
CUR[4:0] = 0...2 (Note 7)
0.8 2.2
W
T
J
= 160°C 2.50
W
DIGITAL INPUTS
I
leak
DI, CLK
NXT, DIR
CLR, CS
Input Leakage (Note 8) T
J
= 160°C 1
mA
V
IL
Logic Low Threshold 0 0.65 V
V
IH
Logic High Threshold 2.35 V
DD
V
R
pd_CLR
CLR Internal Pulldown Resistor 120 200 300
kW
R
pd_TST
TST0 Internal Pulldown Resistor 3 9
kW
6. Current with oscillator running, all analogue cells active, SPI communication and NXT pulses applied. No floating inputs. Parameter
guaranteed by design.
7. Characterization Data Only
8. Not valid for pins with internal Pulldown resistor

AMIS30543DBGEVB

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
DAUGHTER BOARD BIP STEP MOTOR
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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