6.07
JANUARY 2009
DSC-3016/10
1
©2009 Integrated Device Technology, Inc.
Random
Access
Port
Controls
Sequential
Access
Port
Controls
8KX16
Memory
Array
Data
L
Data
R
Addr
L
Addr
R
I/O
0-15
SI/O
0-15
Pointer/
Counter
13
Start Address for Buffer #1
End Address for Buffer #1
Start Address for Buffer #2
End Address for Buffer #2
Flow Control Buffer
Flag Status
EOB
1
EOB
2
13
13
13
16
13
13
RST
COMPARATOR
LB
UB
A
0-12
13
CE
OE
R/W
LSB
MSB
CMD
16
RST
SCLK
CNTEN
SOE
SSTRT
2
SCE
SR/W
SLD
SSTRT
1
16
13
3016 drw 01
Reg.
,
HIGH SPEED 128K (8K X 16 BIT)
SEQUENTIAL ACCESS
RANDOM ACCESS MEMORY (SARAM™)
Functional Block Diagram
IDT70825S/L
Features
High-speed access
Commercial: 20/25/35/45ns (max.)
Low-power operation
IDT70825S
Active: 775mW (typ.)
Standby: 5mW (typ.)
IDT70825L
Active: 775mW (typ.)
Standby: 1mW (typ.)
8K x 16 Sequential Access Random Access Memory
(SARAM
)
Sequential Access from one port and standard Random
Access from the other port
Separate upper-byte and lower-byte control of the
Random Access Port
High speed operation
20ns tAA for random access port
20ns tCD for sequential port
25ns clock cycle time
Architecture based on Dual-Port RAM cells
Compatible with Intel BMIC and 82430 PCI Set
Width and Depth Expandable
Sequential side
Address based flags for buffer control
Pointer logic supports up to two internal buffers
Battery backup operation - 2V data retention
TTL-compatible, single 5V (+10%) power supply
Available in 80-pin TQFP and 84-pin PGA
Industrial temperature range (-40°C to +85°C) is available
for selected speeds
Description
The IDT70825 is a high-speed 8K x 16-Bit Sequential Access
Random Access Memory (SARAM). The SARAM offers a single-chip
solution to buffer data sequentially on one port, and be accessed
randomly (asynchronously) through the other port. The device has a
Dual-Port RAM based architecture with a standard SRAM interface for the
random (asynchronous) access port, and a clocked interface with counter
2
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory Industrial and Commercial Temperature Ranges
NOTES:
1. All V
CC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. PN-80-1 package body is approximately 14mm x 14mm x 1.4mm.
G84-3 package body is approximately 1.21 in x 1.21 in x .16 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
sequencing for the sequential (synchronous) access port.
Fabricated using CMOS high-performance technology, this memory
device typically operates on less than 775mW of power at maximum
high-speed clock-to-data and Random Access. An automatic power
down feature, controlled by CE, permits the on-chip circuitry of each port
to enter a very low standby power mode.
The IDT70825 is packaged in a 80-pin Thin Quad Flatpack (TQFP)
or 84-pin Pin Grid Array (PGA).
3016 drw 02
4
5
6
7
8
9
10
INDEX
11
12
13
14
1
80 79 78 77 76 75 74 73 72 71
23 24 25 26 27 28 29 30 31 32 33 34 35
3
2
15
16
17
18
19
20
21 22 36 37 38 39 40
41
42
43
62 61
60
59
58
57
56
55
54
53
52
6364
51
50
49
48
47
46
45
44
70 69 68 67 66 65
IDT70825PF
PN80-1
(4)
80-PinTQFP
Top View
(5)
G
N
D
G
N
D
V
C
C
G
N
D
V
C
C
V
C
C
G
N
D
V
C
C
N
/
C
A
1
2
G
N
D
V
CC
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
1
A
2
CMD
CE
LB
UB
R/W
OE
A
11
V
CC
A
0
SSTRT
1
SCLK
S
I
/
O
9
S
I
/
O
7
S
I
/
O
1
0
S
I
/
O
1
5
S
I
/
O
1
4
S
I
/
O
8
S
I
/
O
1
1
S
I
/
O
1
2
S
I
/
O
4
S
I
/
O
2
S
I
/
O
1
3
S
I
/
O
6
GND
SI/O
0
N/C
I/O
0
CNTEN
SLD
SCE
SR/W
RST
SSTRT
2
SI/O
1
GND
GND
GND
EOB
2
V
CC
SOE
EOB
1
I
/
O
1
I
/
O
1
5
I
/
O
1
4
I
/
O
1
3
I
/
O
1
2
I
/
O
2
I
/
O
3
I
/
O
4
I
/
O
5
I
/
O
7
I
/
O
6
I
/
O
9
I
/
O
1
0
I
/
O
1
1
I
/
O
8
S
I
/
O
5
S
I
/
O
3
,
3016 drw 03
63 61 60 58 55 54 51 48 46 45
66
67
69
72
75
76
79
81
82
83
125
7
8
11
10
12
14 17 20
23
26
28 29
32 31
33 35
38
41
43
IDT70825G
G84-3
(4)
84-Pin PGA
Top View
(5)
ABCDEFGHJKL
42
59 56 49
50
40
25
27
30
36
34
37
39
8434 6915131618
22 24
19 21
68
71
70
77
80
11
10
09
08
07
06
05
04
03
02
01
64
65
62
57 53
52
47 44
73
74
78
A
3
NC
R/W
UB
A
1
CE
A
5
A
6
A
8
A
9
A
11
I/O
14
NC V
CC
CMD
A
2
NC SI/O
15
I/O
12
I/O
13
SI/O
14
SI/O
13
I/O
9
I/O
5
I/O
8
SI/O
9
SI/O
10
SI/O
6
I/O
4
SI/O
4
SI/O
5
I/O
3
GND
SSTRT1
SCLK GND SI/O
2
V
CC
I/O
7
I/O
6
GND
SI/O
8
SI/O
7
GND
NC
I/O
0
EOB
2
SOE RST
SLD
SI/O
1
SI/O
3
SCE
SI/O
0
I/O
1
GND
CNTEN
GND
SSTRT2
SR/W GND NC
NCV
CC
I/O
15
GND
OE
A
0
LB
V
CC
A
10
A
12
GND
A
4
A
7
I/O
10
V
CC
V
CC
SI/O
11
I/O
11
SI/O
12
I/O
2
V
CC
INDEX
EOB
1
,
Pin Configurations
(1,2,3)
6.42
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory Industrial and Commercial Temperature Ranges
3
Pin Descriptions: Random Access Port
(1)
Pin Descriptions: Sequential Access Port
(1)
NOTE:
1. "I/O" is bidirectional input and output. "I" is input and "O" is output.
SYMBOL NAME I/O DESCRIPTIONS
A
0-
A
12
Address Lines I Address inputs to access the 8192-word (16-Bit) memory array.
I/O
0
-I/O
15
Inputs/Outputs I Random access data inputs/outputs for 16-Bit wide data.
CE Chip Enable I When CE is LOW, the random access port is enabled. When CE is HIGH, the random access port is disabled
into power-down mode and the I/O outputs are in the High-impedance state. All data is retained during CE =
V
IH
, unless it is altered by the sequential port. CE and CMD may not be LOW at the same time.
CMD Control Register
Enable
I When CMD is LOW, address lines A
0
-A
2
, R/W, and inputs/outputs I/O
0
-I/O
12
, are used to access the control
register, the flag register, and the start and end of buffer registers. CMD and CE may not be LOW at the same
time.
R/W Read/Write Enable I If CE is LOW and CMD is HIGH, data is written into the array when R/W is LOW and read out of the array when
R/W is HIGH. If CE is HIGH and CMD is LOW, R/W is used to access the buffer command registers. CE and
CMD may not be LOW at the same time.
OE Output Enable I When OE is LOW and R/W is HIGH, I/O
0
-I/O
15
outputs are enabled. When OE is HIGH, the I/O outputs are in
the High-impedance state.
LB, UB
Lower Byte, Upper
Byte Enables
I When LB is LOW, I/O
0
-I/O
7
are accessible for read and write operations. When LB is HIGH I/O
0
-I/O
7
are tri-
stated and blocked during read and write operations. UB controls access for I/O
8
-I/O
15
in the same manner and
is asynchronous from LB.
V
CC
Power Supply I Seven +5V power supply pins. All V
CC
pins must be connected to the same +5V V
CC
supply.
GND Ground I Ten ground pins. All ground pins must be connected to the same ground supply.
3016 tbl 01
SYMBOL NAME I/O DESCRIPTIONS
SI/O
0-15
Inputs/Outputs I Sequential data inputs/outputs for 16-bit wide data.
SCLK Clock I SI/O
0
-SI/O
15
, SCE, SR/W, and SLD are registered on the LOW-to-HIGH transition of SCLK. Also, the sequential
access port address pointer increments by 1 on each LOW-to-HIGH transition of SCLK when CNTEN is LOW.
SCE Chip Enable I When SCE is LOW, the sequential access port is enabled on the LOW-to-HIGH transition of SCLK. When SCE
is HIGH, the sequential access port is disabled into powered-down mode on the LOW-to-HIGH transition of
SCLK, and the SI/O outputs are in the High-impedance state. All data is retained, unless altered by the random
access port.
CNTEN Control Enable I When CNTEN is LOW, the address pointer increments on the LOW-to-HIGH transition of SCLK. This function is
independent of CE.
SR/W Read/Write Enable I
When SR/W and SCE are LOW, a write cycle is initiated on the LOW-to-HIGH transition of SCLK. When SR/W is
HIGH, and SCE and SOE are LOW, a read cycle is initiated on the LOW-to-HIGH transition of SCLK. Termination
of a write cycle is done on the LOW-to-HIGH transition of SCLK if SR/W or SCE is HIGH.
SLD Address Pointer
Load Control
I
When SLD is sampled LOW, there is an internal delay of one cycle before the address pointer changes. When
SLD is LOW, data on the inputs SI/O
0
-SI/O
12
is loaded into a data-in register on the LOW-to-HIGH transition of
SCLK. On the cycle following SLD, the address pointer changes to the address location contained in the data-
in register. SSTRT
1
and SSTRT
2
may not be LOW while SLD is LOW or during the cycle following SLD.
SSTRT
1
,
SSTRT
2
Load Start of
Address Register
I
When SSTRT
1
or SSTRT
2
is LOW, the start of address register #1 or #2 is loaded into the address pointer on
the LOW-to-HIGH transition of SCLK. The start address are stored in internal registers. SSTRT
1
and SSTRT
2
may not be LOW while SLD is LOW or during the cycle following SLD.
EOB
1
,
EOB
2
End of Buffer Flag I EOB
1
or EOB
2
is output LOW when the address pointer is incremented to match the address stored in the end
of the buffer registers. The flags can be cleared by either asserting RST LOW or by writing zero into Bit 0
and/or Bit 1 of the control register at address 101. EOB
1
and EOB
2
are dependent on separate internal
registers, and therefore separate match addresses.
SOE Output Enable I SOE controls the data outputs and is independent of SCLK. When SOE is LOW, output buffers and the
sequentially addressed data is output. When SOE is HIGH, the SI/O output bus is in the High-impedance state.
SOE is asynchronous to SCLK.
RST Reset I When RST is LOW, all internal registers are set to their default state, the address pointer is set to zero and the
EOB
1
and EOB
2
flags are set HIGH. Rst is asynchronous to SCLK.
3016 tbl 02

IDT70825L20PFI

Mfr. #:
Manufacturer:
Description:
IC RAM 128K PARALLEL 80TQFP
Lifecycle:
New from this manufacturer.
Delivery:
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