4
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings
(1)
Capacitance
(TA = +25°C, f = 1.0mhz, TQFP only)
Recommended DC Operating
Conditions
Recommended Operating
Temperature and Supply Voltage
(1,2)
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(VCC = 5.0V ± 10%)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM must not exceed Vcc + 10% for more than 25% of the cycle time
or 10ns maximum, and is limited to
< 20mA for the period of VTERM >
Vcc + 10%.
NOTES:
1. This is the parameter T
A. This is the "instant on" case temperature.
2. Industrial temperature: for specific speeds, packages and powers contact your
sales office.
NOTES:
1. V
IL > –1.5V for pulse width less than 10ns.
2. V
TERM must not exceed Vcc + 10%.
NOTES:
1. This parameter is determined by device characterization, but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
Symbol Rating Commercial
& Industrial
Unit
V
TERM
(2)
Te rminal Voltag e
with Respect
to GND
-0.5 to +7.0 V
T
BIAS
Temperature
Under Bias
-55 to +125
o
C
T
STG
Storage
Temperature
-65 to +150
o
C
I
OUT
DC Output
Current
50 mA
3016 tbl 03a
Grade Ambient
Temperature
GND Vcc
Commercial 0
O
C to +70
O
C0V5.0V
+
10%
Industrial -40
O
C to +85
O
C0V5.0V
+
10%
3016 tbl 04a
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supply Voltage 4.5 5.0 5.5 V
GND Ground 0 0 0 V
V
IH
Input High Voltage 2.2
____
6.0
(2)
V
V
IL
Input Low Voltage -0.5
(1 )
____
0.8 V
3016 tbl 05
Symbol Parameter Conditions
(2)
Max. Unit
C
IN
Input Capacitance V
IN
= 3dV 9 pF
C
OUT
Output Capacitance V
OUT
= 3dV 10 pF
3016 tbl 06
Symbol Parameter Test Conditions
70825S 70825L
UnitMin. Max. Min. Max.
|I
LI
| Input Leakage Current V
CC
= 5.5V, V
IN
= 0V to V
CC
___
5
___
A
|I
LO
| Output Leakage Current V
OUT
= 0V to V
CC
___
5
___
A
V
OL
Output Low Voltage I
OL
= +4mA
___
0.4
___
0.4 V
V
OH
Output High Voltage I
OH
= -4mA 2.4
___
2.4
___
V
3016 tbl 07
6.42
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory Industrial and Commercial Temperature Ranges
5
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range
(1,2,8)
(VCC = 5.0V ± 10%)
Data Retention Characteristics Over All Temperature Ranges
(L Version Only)
(VLC < 0.2V, VHC > VCC - 0.2V)
NOTES:
1. 'X' in part number indicates power rating (S or L).
2. V
CC = 5V, TA = +25°C; guaranteed by device characterization but not production tested.
3. At f = f
MAX, address, control lines (except Output Enable), and SCLK are cycling at the maximum frequency read cycle of 1/tRC.
4. f = 0 means no address or control lines change.
5. SCE may transition, but is LOW (SCE=V
IL) when clocked in by SCLK.
6. SCE may be - 0.2V, after it is clocked in, since SCLK=V
IH must be clocked in prior to powerdown.
7. If one port is enabled (either CE or SCE = LOW) then the other port is disabled (SCE or CE = HIGH, respectively). CMOS HIGH
> Vcc - 0.2V and LOW < 0.2V, and
TTL HIGH = V
IH and LOW = VIL.
8. Industrial temperature: for other speeds, packages and powers contact your sales office.
NOTES :
1. T
A = +25°C, VCC = 2V; guaranteed by device characterization but not production tested.
2. t
RC = Read Cycle Time
3. This parameter is guaranteed by device characterization, but is not production tested.
4. To initiate data retention, SCE = V
IH must be clocked in.
70825X20
Com'l Only
70825X25
Com'l Only
70825X35
Com'l Only
70825X45
Com'l Only
Symbol Parameter Test Condition Version Typ. Max. Typ. Max. Typ. Max. Typ. Max. Unit
I
CC
Dynamic Operating
Current
(Both Ports Active)
CE = V
IL
,
Outputs Disabled
SCE = V
IL
(5)
f = f
MAX
(3)
COM'L S
L
180
180
380
330
170
170
360
310
160
160
340
290
155
155
340
290
mA
I
SB1
Standby Current
(Both Ports - TTL
Level Inputs)
SCE and CE >
V
IH
(7)
CMD = V
IH
f = f
MAX
(3)
COM'L S
L
25
25
70
50
25
25
70
50
20
20
70
50
16
16
70
50
mA
I
SB2
Standby Current
(One Port - TTL
Level Inputs)
CE or SCE
= V
IH
Active Port Outputs Disabled,
f=f
MAX
(3)
COM'L S
L
115
115
260
230
105
105
250
220
95
95
240
210
90
90
240
210
mA
I
SB3
Full Standby Current
(Both Ports -
CMOS Level Inputs)
Both Ports CE and
SCE >
V
CC
- 0.2V
(6,7)
V
IN
> V
CC
- 0.2V or
V
IN
< 0.2V, f = 0
(4)
COM'L S
L
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
1.0
0.2
15
5
mA
I
SB4
Full Standby Current
(One Port -
CMOS Level Inputs)
One Port CE or
SCE >
V
CC
- 0.2V
(6)
Outputs Disabled (Active Port)
V
IN
> V
CC
- 0.2V or V
IN
< 0.2V
f = f
MAX
(3)
COM'L S
L
110
110
240
200
100
100
230
190
90
90
220
180
85
85
220
180
mA
3016 tbl 08a
Symbol Parameter Test Condition Min. Typ.
(1)
Max. Unit
V
DR
V
CC
for Data Retention V
CC
= 2V 2.0
___ ___
V
I
CCDR
Data Retention Current
CE >
V
HC
V
IN
= V
HC
or = V
LC
IND.
___
100 4000
µA
COM'L.
___
100 1500
t
CDR
(3)
Chip Deselect to Data Retention Time
SCE = V
HC
(4)
when SCLK =
CMD = V
HC
___ ___ ___
V
t
R
(3)
Operation Recovery Time t
RC
(2)
___ ___
V
3016 tbl 09a
6
IDT70825S/L
High-Speed 8K x 16 Sequential Access Random Access Memory Industrial and Commercial Temperature Ranges
DATA RETENTION MODE
V
CC
CE
3016 drw 04
4.5V
t
CDR
t
R
V
DR
V
IH
4.5V
V
DR
2V
S
CLK
SCE
V
IH
I
CC
I
SB
t
PD
I
SB
t
PU
NOTES:
1. SCE is synchronized to the sequential clock input.
2. CMD
> VCC - 0.2V.
Data Retention and Power Down/Up Waveform
(Random and Sequential Port)
(1,2)
Figure 3. Lumped Capacitance Load Typical Derating Curve
Figure 1. AC Output Test Load
AC TEST CONDITIONS
Figure 2. Output Test Load (for tCLZ, tBLZ, tOLZ, tCHZ,
t
BHZ, tOHZ, tWHZ, tCKHZ, and tCKLZ)
*Including scope and jig.
3016 drw 06
893
30pF
347
5V
DATA
OUT
893
5pF*
347
5V
DATA
OUT
3016 drw 05
,
Input Pulse Levels
Input Rise/Fall Times
Input Timing Reference Levels
Output Reference Levels
Output Load
GND to 3.0V
3ns Max.
1.5V
1.5V
Figures 1,2 and 3
3016 tbl 10
1
2
3
4
5
6
7
8
20 40 60 80 100 120 140 160 180
200
CAPACITANCE (pF)
10pF is the I/O
capacitance of
this device, and
30pF is the AC
Test Load
capacitance.
3016 drw 07
tAA/tCD/tEB
(Typical, ns)
-1
-2
-3
,

IDT70825L20PFI

Mfr. #:
Manufacturer:
Description:
IC RAM 128K PARALLEL 80TQFP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union