Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
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semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Team Nexperia
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PBSS5260QA
60 V, 1.7 A PNP low VCEsat (BISS) transistor
28 August 2013 Product data sheet
Scan or click this QR code to view the latest information for this product
1. General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a leadless ultra small
DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible
and solderable side pads.
NPN complement: PBSS4260QA.
2. Features and benefits
Very low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain h
FE
at high I
C
High energy efficiency due to less heat generation
Reduced Printed-Circuit Board (PCB) area requirements
Solderable side pads
AEC-Q101 qualified
3. Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter
voltage
open base - - -60 V
I
C
collector current - - -1.7 A
I
CM
peak collector current t
p
≤ 1 ms; pulsed - - -2.5 A
R
CEsat
collector-emitter
saturation resistance
I
C
= -1 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- 195 280
NXP Semiconductors
PBSS5260QA
60 V, 1.7 A PNP low VCEsat (BISS) transistor
PBSS5260QA All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 28 August 2013 2 / 17
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 B base
2 E emitter
3 C collector
4 C collector
DFN1010D-3 (SOT1215)
sym132
E
C
B
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PBSS5260QA DFN1010D-3 plastic thermal enhanced ultra thin small outline package; no
leads; 3 terminals
SOT1215
7. Marking
Table 4. Marking codes
Type number Marking code
PBSS5260QA 10 00 10
MARKING CODE
(EXAMPLE)
PIN 1
INDICATION MARK
VENDOR CODE
YEAR DATE
CODE
READING
DIRECTION
READING EXAMPLE:
11
01
10
aaa-008041
MARK-FREE AREA
Fig. 1. DFN1010D-3 (SOT1215) binary marking code description

PBSS5260QAZ

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 60V,1.7A PNP low VCE sat (BISS) transi
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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