NXP Semiconductors
PBSS5260QA
60 V, 1.7 A PNP low VCEsat (BISS) transistor
PBSS5260QA All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 28 August 2013 10 / 17
aaa-008115
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 12. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-008116
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
-10
-1
-1
V
CEsat
(V)
-10
-2
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 13. Collector-emitter saturation voltage as a
function of collector current; typical values
aaa-008117
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
T
amb
= 25 °C
(1) I
C
/I
B
= 100
(2) I
C
/I
B
= 50
(3) I
C
/I
B
= 10
Fig. 14. Collector-emitter saturation resistance as a
function of collector current; typical values
aaa-008118
I
C
(mA)
-10
-1
-10
4
-10
3
-1 -10
2
-10
1
10
10
2
10
3
R
CEsat
(Ω)
10
-1
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 15. Collector-emitter saturation resistance as a
function of collector current; typical values
