NXP Semiconductors
PBSS5260QA
60 V, 1.7 A PNP low VCEsat (BISS) transistor
PBSS5260QA All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 28 August 2013 4 / 17
T
amb
(°C)
-75 17512525 75-25
aaa-007844
0.50
0.75
0.25
1.00
1.25
P
tot
(W)
0
(1)
(2)
(3)
(4)
(5)
(1) FR4 PCB, 4-layer copper, 1 cm
2
(2) FR4 PCB, single-sided copper, 6 cm
2
(3) FR4 PCB, single-sided copper, 1 cm
2
(4) FR4 PCB, 4-layer copper, standard footprint
(5) FR4 PCB, single-sided copper, standard footprint
Fig. 2. Power derating curves
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 385 K/W
[2] - - 209 K/W
[3] - - 169 K/W
[4] - - 232 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[5] - - 125 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 1 cm
2
.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated mounting pad for collector 6 cm
2
.
[4] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5]
Device mounted on an FR4 PCB, 4-layer copper, tin-plated mounting pad for collector 1 cm
2
.
