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PBSS5260QAZ
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
NXP Semiconductors
PBSS5260QA
60 V
, 1.7 A PNP low VCEsat (BISS) transistor
PBSS5260QA
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
28 August 2013
6 / 17
aaa-007847
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
duty cycle = 1
FR4 PCB, single-sided copper
, 6 cm
2
Fig. 5.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-007848
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, 4-layer copper
, standard footprint
Fig. 6.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
NXP Semiconductors
PBSS5260QA
60 V
, 1.7 A PNP low VCEsat (BISS) transistor
PBSS5260QA
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
28 August 2013
7 / 17
aaa-007849
10
-5
10
10
-2
10
-4
10
2
10
-1
t
p
(s)
10
-3
10
3
1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
0
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
duty cycle = 1
FR4 PCB, 4-layer copper
, 1 cm
2
Fig. 7.
T
ransient thermal impedance from junction to ambient as a function of pulse duration; typical values
10.
Characteristics
T
able 7.
Characteristics
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
V
CB
= -48 V; I
E
= 0 A; T
amb
= 25 °C
-
-
-100
nA
I
CBO
collector-base cut-off
current
V
CB
= -48 V; I
E
= 0 A; T
j
= 150 °C
-
-
-50
µA
I
CES
collector-emitter cut-off
current
V
CE
= -48 V; V
BE
= 0 V; T
amb
= 25 °C
-
-
-100
nA
I
EBO
emitter-base cut-off
current
V
EB
= -5 V; I
C
= 0 A; T
amb
= 25 °C
-
-
-100
nA
V
CE
= -2 V; I
C
= -100 mA; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C; pulsed
160
250
-
V
CE
= -2 V; I
C
= -500 mA; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C; pulsed
120
185
-
V
CE
= -2 V; I
C
= -1 A; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C; pulsed
85
125
-
h
FE
DC current gain
V
CE
= -2 V; I
C
= -1.7 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
30
45
-
I
C
= -500 mA; I
B
= -50 mA; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
-
-105
-155
mV
I
C
= -1 A; I
B
= -50 mA; t
p
≤ 300 µs;
δ ≤ 0.02 ; T
amb
= 25 °C
-
-280
-400
mV
V
CEsat
collector-emitter
saturation voltage
I
C
= -1 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-195
-280
mV
NXP Semiconductors
PBSS5260QA
60 V
, 1.7 A PNP low VCEsat (BISS) transistor
PBSS5260QA
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
28 August 2013
8 / 17
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
I
C
= -1.3 A; I
B
= -65 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-480
-700
mV
I
C
= -1.7 A; I
B
= -170 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-350
-500
mV
R
CEsat
collector-emitter
saturation resistance
I
C
= -1 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
195
280
mΩ
I
C
= -500 mA; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-0.85
-1
V
I
C
= -1 A; I
B
= -50 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-0.88
-1.05
V
I
C
= -1.3 A; I
B
= -65 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-0.91
-1.1
V
V
BEsat
base-emitter saturation
voltage
I
C
= -1.7 A; I
B
= -170 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-1
-1.15
V
V
BEon
base-emitter turn-on
voltage
V
CE
= -2 V; I
C
= -0.5 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-0.78
-0.9
V
t
d
delay time
-
15
-
ns
t
r
rise time
-
35
-
ns
t
on
turn-on time
-
50
-
ns
t
s
storage time
-
300
-
ns
t
f
fall time
-
50
-
ns
t
off
turn-off time
V
CC
= -10 V; I
C
= -0.5 A; I
Bon
= -25 mA;
I
Boff
= 25 mA; T
amb
= 25 °C
-
350
-
ns
f
T
transition frequency
V
CE
= -10 V; I
C
= -50 mA; f = 100 MHz;
T
amb
= 25 °C
100
150
-
MHz
C
c
collector capacitance
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
12
15
pF
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
P16-P18
PBSS5260QAZ
Mfr. #:
Buy PBSS5260QAZ
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT 60V,1.7A PNP low VCE sat (BISS) transi
Lifecycle:
New from this manufacturer.
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